BCW61B
BCW61C
BCW61D
SURFACE MOUNT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCW61B Series
types are PNP Silicon Transistors manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for low level, low noise
applications.
MARKING CODES: BCW61B : BB
BCW61C : BC
BCW61D : BD
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Emitter Voltage VCEO 32 V
Collector-Base Voltage VCBO 32 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 100 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICES V
CE=32V 20 nA
ICES V
CE=32V, TA=150°C 20 μA
BVCEO I
C=2.0mA 32 V
BVEBO I
E=1.0μA 5.0 V
VCE(SAT) I
C=10mA, IB=250μA 0.25 V
VCE(SAT) I
C=50mA, IB=1.25mA 0.55 V
VBE(SAT) I
C=10mA, IB=250μA 0.60 0.85 V
VBE(SAT) I
C=50mA, IB=1.25mA 0.68 1.05 V
VBE(ON) V
CE=5.0V, IC=2.0mA 0.60 0.75 V
Cob V
CB=10V, IC=0, f=1.0MHz 6.0 pF
NF VCE=5.0V, IC=0.2mA, RS=2.0kΩ,
f=1.0kHz, BW=200Hz 6.0 dB
ton V
CC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA 150 ns
ton V
CC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA 800 ns
BCW61B BCW61C BCW61D
MIN MAX MIN MAX MIN MAX
hFE V
CE=5.0V, IC=10μA 30 40 100
hFE V
CE=5.0V, IC=2.0mA 140 310 250 460 380 630
hFE V
CE=1.0V, IC=50mA 80 100 100
hfe V
CE=5.0V, IC=2.0mA, f=1.0kHz 175 350 250 500 350 700
SOT-23 CASE
R2 (20-November 2009)
www.centralsemi.com
BCW61B
BCW61C
BCW61D
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODES: BCW61B : BB
BCW61C : BC
BCW61D : BD
www.centralsemi.com
R2 (20-November 2009)
