www.irf.com Rev.H 011508 1
Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=20kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: tP<100ms; TC=25°C; FPWM=20kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics"
Absolute Maximum Ratings
Parameter Description Units
VCES / VRRM IGBT/Diode Blocking Voltage V
V+Positive Bus Input Voltage
IO @ TC=25°C RMS Phase Current (Note 1)
IO @ TC=100°C RMS Phase Current (Note 1) A
IO Pulsed RMS Phase Current (Note 2)
FPWM PWM Carrier Frequency kHz
PDPower dissipation per IGBT @ TC =25°C W
VISO Isolation Voltage (1min) VRMS
TJ (IGBT & Diodes) Operating Junction temperature Range °C
TJ (Driver IC) Operating Junction temperature Range
T Mounting torque Range (M3 screw) Nm
Values
5
15
20
450
600
10
0.5 to 1.0
27
-40 to +150
2000
-40 to +150
PD-95830 RevH
IRAMS10UP60B
IRAMS10UP60B
2www.irf.com
Internal Electrical Schematic - IRAMS10UP60B
23 VS1
24 HO1
25 VB1
1 VCC
2 HIN1
3 HIN2
4 HIN3
5 LIN1
LIN2
6
LIN3
7
F
8
ITRIP
9
EN
10
RCIN
11
VSS
12
COM
13
22
VB2
21
HO2
20
VS2
19
VB3
18
HO3
17
VS3
V- (12)
VB1 (7)
U, VS1 (8)
VB2 (4)
V, VS2 (5)
VB3 (1)
W, VS3 (2)
VCC (14)
VSS (23)
Driver IC
LO1 16
LO3 14
LO2 15
ITRIP (22)
HIN1 (15)
HIN2 (16)
HIN3 (17)
LIN1 (18)
LIN2 (19)
LIN3 (20)
V (10)+
VTH (13) THERMISTOR
FLT-EN(21)
IRAMS10UP60B
www.irf.com 3
Absolute Maximum Ratings (Continu ed)
Symbol Parameter Min Max Units
IBDF
Bootstrap Diode Peak Forward
Current --- 4.5 A
PBR Peak
Bootstrap Resistor Peak Power
(Single Pulse) --- 80 W
VS1,2,3
High side floating supply offset
voltage VB1,2,3 - 25 VB1,2,3 +0.3 V
VB1,2,3 High side floating supply voltage -0.3 600 V
VCC
Low Side and logic fixed supply
voltage -0.3 20 V
VIN, VEN, VITRIP Input voltage LIN, HIN, EN, ITrip -0.3
Lower of
(VSS+15V) or
VCC+0.3V
V
Conditions
tP= 10ms,
TJ = 150°C, TC=100°C
tP=100µs, TC =100°C
ESR / ERJ series
In vert er S e ction Ele ctr ical Charac t eristics @T J= 25°C
Symbol Parameter Min Typ Max Units
V
(BR)CES
Collector-to-Emitter Breakdown
Voltage 600 --- --- V
∆V
(BR)CES
/ ∆TTemperature Coefficient of
Breakdown Voltage --- 0.57 --- V/°C
--- 1.70 2.00
--- 2.00 2.40
--- 5 80 V
IN
=5V, V
+
=600V
--- 10 --- V
IN
=5V, V
+
=600V, T
J
=150°C
--- 1.80 2.35
--- 1.30 1.70 I
C
=5A, T
J
=150°C
-- -- 1.25
--- --- 1.10
R
BR
Bootstrap Resistor Value --- 2 --- Ω
∆R
BR
/R
BR
Bootstrap Resistor Tolerance --- --- ±5 %
I
BUS_TRIP
Current Protection Threshold
(positive going) 13.1 --- 16.4 A
Conditions
I
CES
Zero Gate Voltage Collector
Current µA
V
CE(ON)
Collector-to-Emitter Saturation
Voltage V
V
IN
=5V, I
C
=1.0mA
(25°C - 150°C)
T
J
=-40°C to 125°C
See fig. 2
V
IN
=5V, I
C
=250µA
V
V
BDFM
Bootstrap Diode Forward Voltage
Drop V
V
FM
Diode Forward Voltage Drop
I
C
=5A, V
CC
=15V, T
J
=150°C
I
C
=5A, V
CC
=15V
T
J
=25°C
T
J
=25°C
I
C
=5A
I
F
=1A
I
F
=1A, T
J
=150°C
IRAMS10UP60B
4www.irf.com
Inverte r S e c tion S witching Ch aracte ristic s @ T J= 25°C
Symbol Parameter Min Typ Max Units
EON Turn-On Switching Loss --- 200 235
EOFF Turn-Off Switching Loss --- 75 100
ETOT Total Switching Loss --- 275 335
EREC Diode Reverse Recovery energy --- 15 25
tRR Diode Reverse Recovery time --- 70 100 ns
EON Turn-On Switching Loss --- 300 360
EOFF Turn-off Switching Loss --- 135 165
ETOT Total Switching Loss --- 435 525
EREC Diode Reverse Recovery energy --- 30 40
tRR Diode Reverse Recovery time --- 100 145 ns
QGTurn-On IGBT Gate Charge --- 29 44 nC
RBSOA Reverse Bias Safe Operating Area
SCSOA Short Circuit Safe Operating Area 10 --- --- µs
ICSC Short Circuit Collector Current --- 47 --- A
TJ=150°C, VP=600V,
V+= 360V,
VCC=+15V to 0V See CT2
TJ=150°C, VP=600V, tSC<10µs
V+= 360V, VGE=15V
VCC=+15V to 0V See CT2
FULL SQUARE
Conditions
IC=5A, V+=400V
VCC=15V, L=2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
IC=5A, V+=400V
VCC=15V, L=2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
See CT1
µJ
µJ
IC=15A, V+=400V, VGE=15V
TJ=150°C, IC=5A, VP=600V
V+= 450V
VCC=+15V to 0V See CT3
Recommended Operating Conditions Driver Function
Symbol Definition Min Max Units
VB1,2,3 High side floating supply voltage VS+12 VS+20
VS1,2,3 High side floating supply offset voltage Note 4 450
VCC Low side and logic fixed supply voltage 12 20
VITRIP ITRIP input voltage VSS VSS+5
VIN Logic input voltage LIN, HIN VSS VSS+5 V
VEN Logic input voltage EN VSS VSS+5 V
Note 3: For more details, see IR21363 data sheet
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommende conditions. All voltages are absolute referenced to COM/ITRIP. The VS offset is tested with all supplies biased
at 15V differential (Note 3)
V
V
Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS.
(please refer to DT97-3 for more details)
IRAMS10UP60B
www.irf.com 5
Stat i c Ele ct ri c al Charac t erist i cs Dr iver Fun c t i o n
Symbol Definition Min Typ Max Units
VINH , VENH Logic "0" input voltage 3.0 --- --- V
VINL , VENL Logic "1" input voltage --- --- 0.8 V
VCCUV+, VBSUV+ VCC and VBS supply undervoltage Positive going threshold 10.6 11.1 11.6 V
VCCUV-, VBSUV- VCC and VBS supply undervoltage Negative going threshold 10.4 10.9 11.4 V
VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V
VIN,Clamp Input Clamp Voltage (HIN, LIN, ITRIP) IIN=10µA 4.9 5.2 5.5 V
IQBS Quiescent VBS supply current VIN=0V --- --- 165 µA
IQCC Quiescent VCC supply current VIN=0V --- --- 3.35 mA
ILK Offset Supply Leakage Current --- --- 60 µA
IIN+, IEN+ Input bias current VIN=5V --- 200 300 µA
IIN-, IEN- Input bias current VIN=0V --- 100 220 µA
ITRIP+ ITRIP bias current VITRIP=5V --- 30 100 µA
ITRIP- ITRIP bias current VITRIP=0V --- 0 1 µA
V(ITRIP)I
TRIP threshold Voltage 440 490 540 mV
V(ITRIP, HYS) ITRIP Input Hysteresis --- 70 --- mV
RON,FLT Fault Output ON Resistance --- 50 100 ohm
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM/ITRIP and are
applicable to all six channels. (Note 3)
Dy namic E l ec trical Characteristi cs
Driver only timing unless otherwise specified.)
Symbol Parameter Min Typ Max Units Conditions
T
ON
Input to Output propagation turn-
on delay time (see fig.11) --- 590 --- ns
T
OFF
Input to Output propagation turn-
off delay time (see fig. 11) --- 700 --- ns
T
FLIN
Input Filter time (HIN, LIN) 100 200 --- ns V
IN
=0 & V
IN
=5V
T
BLT-Trip
I
TRIP
Blancking Time 100 150 ns V
IN
=0 & V
IN
=5V
D
T
Dead Time (V
BS
=V
DD
=15V) 220 290 360 ns V
BS
=V
CC
=15V
M
T
Matchin
g
Propa
g
ation Delay Time
(On & Off) --- 40 75 ns V
CC
= V
BS
= 15V, external dead
time> 400ns
T
ITrip
I
Trip
to six switch to turn-off
propagation delay (see fig. 2) --- --- 1.75 µs V
CC
=V
BS
= 15V, I
C
=10A, V
+
=400V
--- 7.7 --- T
C
= 25°C
--- 6.7 --- T
C
= 100°C
V
CC
=V
BS
= 15V, I
C
=10A, V
+
=400V
Post I
Trip
to six switch to turn-off
clear time (see fig. 2)
T
FLT-CLR
ms
IRAMS10UP60B
6www.irf.com
Input-Outpu t Logic Level Table
FLT- EN ITRIP HIN1,2,3 LIN1,2,3 U,V,W
1001
V+
10100
1011Off
11XXOff
0XXXOff
Ho
Lo
U,V,W
IC
Driver
V+
Hin1,2,3
Lin1,2,3
(15,16,17)
(18,19,20)
(8,5,2)
Th ermal and M ec han i c al Characteri sti cs
Symbol Parameter Min Typ Max Units Conditions
Rth(J-C) Thermal resistance, per IGBT --- 4.2 4.7
Rth(J-C) Thermal resistance, per Diode --- 5.5 6.5
Rth(C-S) Thermal resistance, C-S --- 0.1 ---
CDCreepage Distance 3.2 --- --- mm See outline Drawings
°C/W
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK
In t ernal N T C - T h ermisto r Characte r ist ics
Parameter Definition Min Typ Max Units Conditions
R25 Resistance 97 100 103 kΩTC = 25°C
R125 Resistance 2.25 2.52 2.80 kΩTC = 125°C
B B-constant (25-50°C) 4165 4250 4335 k R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range -40 125 °C
Typ. Dissipation constant 1 mW/°C TC = 25°C
Internal Current Sensing Resistor - Shunt Characteristics
Symbol Parameter Min Typ Max Units Conditions
RShunt Resistance 33.0 33.3 33.7 mΩTC = 25°C
TCoeff Temperature Coefficient 0 --- 200 ppm/°C
PShunt Power Dissipation --- --- 2.2 W-40°C< TC <100°C
TRange Temperature Range -40 --- 125 °C
IRAMS10UP60B
www.irf.com 7
LIN1,2,3
HIN1,2,3
tfltclr
50%
U,V,W
IBUS_trip
6µs 1µs
IBUS
Sequence of events:
1-2) Current begins to rise
2) Current reaches IBUS_Trip level
2-3) Current is higher than IBUS_Trip for at least 6µs. This value is the worst-case condition with very low
over-current. In case of high current (short circuit), the actual delay will be smaller.
3-4) Delay between driver identification of over-current condition and disabling of all outputs
4) Current starts decreasing, eventually reaching 0
5) Current goes below IBUS_trip, the driver starts its auto-reset sequence
6) Driver is automatically reset and normal operation can resume (over-current condition must be removed
by the time the drivers automatically resets itself)
3 421 5 6
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output
voltage would be determined by the direction of current flow in the load.
Figure 2. ITrip Timing Waveform
IRAMS10UP60B
8www.irf.com
Module Pin-Out Description
1
23
Pin Name Description
1VB3 High Side Floating Supply Voltage 3
2W,VS3 Output 3 - High Side Floating Supply Offset Voltage
3NAnone
4VB2 High Side Floating Supply voltage 2
5V,VS2 Output 2 - High Side Floating Supply Offset Voltage
6NAnone
7VB1 High Side Floating Supply voltage 1
8U, VS1 Output 1 - High Side Floating Supply Offset Voltage
9NAnone
10 V+Positive Bus Input Voltage
11 NA none
12 V-Negative Bus Input Voltage
13 VTH Temperature Feedback
14 VCC +15V Main Supply
15 HIN1 Logic Input High Side Gate Driver - Phase 1
16 HIN2 Logic Input High Side Gate Driver - Phase 2
17 HIN3 Logic Input High Side Gate Driver - Phase 3
18 LIN1 Logic Input Low Side Gate Driver - Phase 1
19 LIN2 Logic Input Low Side Gate Driver - Phase 2
20 LIN3 Logic Input Low Side Gate Driver - Phase 3
21 FLT/Enable Fault Output and Enable Pin
22 ITRIP Current Sense and Itrip Pin
23 VSS Negative Main Supply
IRAMS10UP60B
www.irf.com 9
Typical Application Connection IRAMS10UP60B
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and
EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve perfor-
mance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected be-
tween these terminals should be located very close to the module pins. Additional high frequency capacitors, typically
0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on
IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the
power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3).
4. Current sense signal can be obtained from pin 22 and pin 23. Care should be taken to avoid having inverter current
flowing through pin 22 to mantain required current measurement accuracy.
5. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
6. PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition
must be cleared before resuming operation.
7. Fault/Enable pin must be pulled-up to +5V.
HIN2
HIN3
LIN1
LIN2
LIN3
HIN1
Date Code Lot #
23
IRAMS10UP60B
1
3-Phase AC
MOTOR
BOOT-STRAP
CAPACITORS
U
V
W
Vcc (15 V)
ITRIP
VSS
CONTROLLER
V+
DC BUS
CAPACITORS
Temp
Monitor
Fault
10mF
0.1mF
2.2µF
Fault/Enable
1K +5V
47kohm
+5V +15V
V-
VTH
VB3
VB2
VB1
+5V
VS3
VS2
VS1
PGND
DGND
DGND
IRAMS10UP60B
10 www.irf.com
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency
V+=400V, TJ=150°C, TC=100°C, Modulation Depth=0.8, PF=0.6
110100
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
TJ = 150°C
Sinusoidal Modulation
Maximum Output Phase RMS Current - A
Modula tion Fr equenc y - H z
FPWM = 20kHz
FPWM = 16kHz
FPWM = 12kHz
0 2 4 6 8 101214161820
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
TJ = 150°C
Sinusoidal Modulation
Maximum Output Phas e RMS Curre nt - A
PWM Frequency - kHz
TC = 100°C
TC = 110°C
TC = 120°C
IRAMS10UP60B
www.irf.com 11
Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation
V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation
VBUS=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
0 2 4 6 8 101214161820
0
10
20
30
40
50
60
70
Total Power Losses - W
PWM Switching Frequency - kHz
IOUT = 6 ARMS
IOUT = 5 ARMS
IOUT = 4 ARMS
TJ = 150°C
Sinusoidal Modulation
012345678
0
10
20
30
40
50
60
70
80
TJ = 150°C
Sinusoidal Modulation
Total Power Losses - W
Outp ut P ha s e Cu rr ent - A RMS
FPWM = 12 kHz
FPWM = 16 kHz
FPWM = 20 kHz
IRAMS10UP60B
12 www.irf.com
Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
012345678
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
TJ = 150°C
Sinusoidal Modulation
Maximum Allowable Case Temp er a ture - °C
Ou tput P h a se Cur rent - A RMS
FPWM = 12 kHz
FPWM = 16 kHz
FPWM = 20 kHz
65 70 75 80 85 90 95 100 105 110 115
100
110
120
130
140
150
160
TJ avg. = 1.2363 x TTherm+ 26.2775
IGBT Junction Temperature - °C
Internal Thermistor Temperature Equivalent Read Out - °C
IRAMS10UP60B
www.irf.com 13
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
Figure 9. Thermistor Readout vs. Temperature (47kohm pull-up resistor, 5V) and
Nominal Thermistor Resistance values vs. Temperature Table.
0 5 10 15 20
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
3.3µF
6.8µF
RBS DBS CBS
RG1
RG2
VS
HO
LO
COM
vB
VCC
HIN
LIN
+15V
VSS
V+
HIN
LIN
U,V,W
GND
VSS
2.2µF
4.7µF
Recommended Boots tr a p Capacitor - µ F
PWM Frequency - kHz
15µF
-40-40 -30 -20-20 -10 00102020 30 4040 50 6060 70 8080 90 100100 110 120120 130
0.00.0
0.5
1.01.0
1.5
2.02.0
2.5
3.03.0
3.5
4.04.0
4.5
5.05.0
+5 V
VThe rm
RTherm
REXT
Thermistor Pin Read - O ut Voltage - V
Thermis tor Temper a tur e - °C
Min
Avg.
Max
T
THERM
R
THERM
T
THERM
R
THERM
T
THERM
R
THERM
°C Ω°C Ω°C Ω
-40 4397119 25 100000 90 7481
-35 3088599 30 79222 95 6337
-30 2197225 35 63167 100 5384
-25 1581881 40 50677 105 4594
-20 1151037 45 40904 110 3934
-15 846579 50 33195 115 3380
-10 628988 55 27091 120 2916
-5 471632 60 22224 125 2522
0 357012 65 18322 130 2190
5 272500 70 15184 135 1907
10 209710 75 12635 140 1665
15 162651 80 10566 145 1459
20 127080 85 8873 150 1282
IRAMS10UP60B
14 www.irf.com
Figure 11. Switching Parameter Definitions
Figure 11a. Input to Output Propagation
turn-on Delay Time
Figure 11b. Input to Output Propagation
turn-off Delay Time
Figure 11c. Diode Reverse Recovery
50%
HIN/LIN
VCE
IC
HIN/LIN
TOFF
tf
90% IC
10% IC
50%
VCE
VCE IC
HIN/LIN
TON
tr
50%
HIN/LIN 90% IC
10% IC
50%
VCE
VCE
IF
HIN/LIN
trr
Irr
IRAMS10UP60B
www.irf.com 15
Figure CT1. Switching Loss Circuit
Figure CT2. S.C.SOA Circuit
Figure CT3. R.B.SOA Circuit
Ho
Lo
U,V,W
IC
Driver
V+
Lin1,2,3
5V
Hin1,2,3
Ho
Lo
U,V,W
IC
Driver
V+
Lin1,2,3
Hin1,2,3
IN
10k
1k
5VZD
VCC
Io
Ho
Lo
U,V,W
IC
Driver
V+
Lin1,2,3
Hin1,2,3
IN
10k
1k
5VZD
VCC
Io
IN
IO
IN
IO
IN
IO
IRAMS10UP60B
16 www.irf.com
Standard pin leadforming option
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
4- Tollerances ±0.5mm, unless otherwise stated
For mounting instruction, see AN1049
027-E2D24
IRAMS10UP60B
note 1
note 2
note 3
Package Outline
IRAMS10UP60B
www.irf.com 17
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
01/08
Package Outline
For mounting instruction see AN-1049
Pin leadforming option -2
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
4- Tollerances ±0.5mm, unless otherwise stated
027-E2D24
note 1
IRAMS10UP60B-2
note 2
note 3
