©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002
MPSA05/MMBTA05
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Charac teris tics TA=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6” × 0.06"
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 4.0 V
ICCollector current - Continuous 500 mA
TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C
Symbol Parameter Test Cond ition Min. Typ. Max. Units
Off Characteristics
V(BR)CEO Collector-E mit ter Br eakdown Volt age * IC = 1mA, IB = 0 60 V
V(BR)EBO Emitter-Base Breakdown Volt age IC = 100µA, IC = 0 4 V
ICEO Collector Cutoff Current VCE = 60V, IB = 0 0.1 µA
ICBO Emitter Cutoff Current VCB = 60V, IE = 0 0.1 µA
On Characteristics
hFE DC Current Gain IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V 100
100
VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 10mA 0.25 V
VBE(on) Base-Emitter On Voltage IC = 100mA, VCE = 1.0V 1.2 V
Small Signal Characteristics
fTCurrent Gain Bandwidth Product IC = 10mA, VCE = 2V,
f = 100MHz 100 MHz
Symbol Parameter Max. Units
MPSA05 *MMBTA05
PDTotal Device Dissipation
Derate above 25°C625
5350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
MPSA05/MMBTA05
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier
applications at collector currents to 300mA.
• Sourced from process 10.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: 1H
TO-92
1
1. Emitter 2. Base 3. Collector
Package Dimensions
MPSA05/MMBTA05
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002
MPSA05/MMBTA05
Package Dimensions (Continued)
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.023
0.20 MIN
0.40 ±0.03
SOT-23
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. I1
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Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
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