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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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©2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1
IGBT
SGH40N60UFD
SGH40N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 42ns (t yp.)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Charac teris tics
Symbol Description SGH40N60UFD Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
ICCollector Current @ TC = 25°C40 A
Collector Current @ TC = 100°C20 A
ICM (1) Pulsed Collector Current 160 A
IFDiode Continuous Forward Current @ TC = 100°C15 A
IFM Diode Maximum Forward Current 160 A
PDMaximum Power Dissipation @ TC = 25°C 160 W
Maximum Power Dissipation @ TC = 100°C64 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds 300 °C
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction-to- Case -- 0.77 °C/W
RθJC(DIOD E) Thermal Resistance, Junction-to- Case -- 1.7 °C/W
RθJA Thermal Resistance, Junction-to- Am bient -- 40 °C/W
Applications
AC & DC motor controls, general purpose inverters, robotics , and servo controls.
GCETO-3PN
G
C
E
G
C
E
SGH40N60UFD Rev. A1
SGH40N60UFD
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Electric al Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C
ICES Collector Cut-Of f Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA
On Characteri st ics
VGE(th) G-E Threshold Volt age IC = 20mA, VCE = VGE 3.5 4.5 6.5 V
VCE(sat) Collector to Emitter
Saturation V oltage IC = 20A, VGE = 15V -- 2.1 2.6 V
IC = 40A, VGE = 15V -- 2.6 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
-- 1430 -- pF
Coes Output Capacitance -- 170 -- pF
Cres Reverse Transfer Capacitance -- 50 -- pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
-- 15 -- ns
trRise Time -- 30 -- ns
td(off) Turn-Off De l a y Time -- 65 130 n s
tfFall Time -- 50 150 ns
Eon Turn- On Switching Loss -- 160 -- uJ
Eoff Turn -Off Swit ch i n g Lo ss -- 200 -- uJ
Ets Total Switching Loss -- 360 600 uJ
td(on) Turn-On Delay Time
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
-- 30 -- ns
trRise Time -- 37 -- ns
td(off) Turn-Off De l a y Time -- 110 200 ns
tfFall Time -- 144 250 ns
Eon Turn-On Switching Loss -- 310 -- uJ
Eoff Turn-Off Swit ch i n g Loss -- 430 -- uJ
Ets Total Switching Loss -- 740 1200 uJ
QgTotal Gate Charge VCE = 300 V, IC = 20A,
VGE = 15V
-- 97 150 nC
Qge Gate-Emitter Charge -- 20 30 nC
Qgc Gate-Collector Charge -- 25 40 nC
LeInternal Emitter Inductance Measured 5mm from PKG -- 14 -- nH
Symbol Parameter Test Conditions Min. Typ. Max. Units
VFM Diode Forward V oltage IF = 15A TC = 25°C-- 1.4 1.7 V
TC = 100°C-- 1.3 --
trr Diode Reverse Recovery Time
IF = 15A,
di/dt = 200A/us
TC = 25°C-- 42 60 ns
TC = 100°C-- 74 --
Irr Diode Peak Reverse Recovery
Current TC = 25°C-- 4.5 6.0 A
TC = 100°C-- 6.5 --
Qrr Diode Reverse Recovery Charge TC = 25°C-- 80 180 nC
TC = 100°C-- 220 --
SGH40N60UFD Rev. A1
SGH40N60UFD
©2002 Fairchild Semiconductor Corporation
0 4 8 12 16 20
0
4
8
12
16
20 Comm o n E mitter
TC = 125℃
40A
20A
IC = 10A
Collector - Emitter Voltage, V
CE [V]
Gate - Emitter Volt age, VGE [V]
048121620
0
4
8
12
16
20 Common Emitter
TC = 25℃
40A
20A
IC = 10A
Collec to r - Em itter Vol tage, V
CE [V]
Gate - Emitter Voltage, VGE [V]
0
5
10
15
20
25
30
0.1 1 10 100 1000
Duty cycle : 50%
TC = 100℃
Powe r D is si pation = 32W
VCC = 300V
Load Cur ren t : pea k o f s q uare wave
Frequency [KHz]
Load Current [A]
0306090120150
0
1
2
3
4
40A
20A
IC = 10A
Common Emitter
VGE = 15V
Collector - Emitter Voltage, V
CE [V]
Case Temperat ure, TC [℃]
0.5 1 10
0
10
20
30
40
50
60
70
80 Comm o n E mitter
VGE = 15V
TC = 25℃
TC = 125℃
Collector Current, I
C [A]
Collector - Emitter Voltage, VCE [V]
02468
0
40
80
120
160 20V
12V
15V
VGE = 10V
Common Emitter
TC = 25℃
Collector Current, I
C [A]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typica l Output Cha rac teristics Fig 2. Typ ical Satura tion Voltage
Characteristics
Fig 3. Saturat i on Volta ge vs. Case
Temperature at Variant Curr ent Level Fig 4. Load Cu rr ent vs. Fr equency
Fig 5. Saturati on Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE
SGH40N60UFD Rev. A1
SGH40N60UFD
©2002 Fairchild Semiconductor Corporation
10 15 20 25 30 35 40
20
100
1000
Toff
Tf
Toff
Tf
Com m o n Em it te r
VCC = 30 0V, VGE = ±15V
RG = 10Ω
TC = 25℃
TC = 125℃
Switching Time [nS]
Collector Current, IC [A]
110100200
50
100
1000
2000
Eon
Eoff
Eon
Eoff
Com mon Emitter
VCC = 300V, VGE = ±15V
IC = 20A
TC = 25℃
TC = 125℃
Switc hing Loss [uJ]
Gate Resistance, RG [Ω]
110100200
20
100
1000
Toff
Tf
Tf
Common Emitter
VCC = 300V, VGE = ±15V
IC = 20A
TC = 25℃
TC = 125℃
Switchi n g Time [ns]
Gate Res istance, RG [Ω]
110100200
10
100
300 Common Em itte r
VCC = 300V, VGE = ±15V
IC = 20A
TC = 25℃
TC = 125℃
Ton
Tr
Switching Time [ns]
Gate Resistance, RG [Ω]
11030
0
500
1000
1500
2000
2500
Cres
Coes
Cies
Common Emitter
VGE = 0V, f = 1MH z
TC = 25℃
Ca pacitance [pF]
Collector - Emitter Voltage, VCE [V ]
Fig 7. Capacit ance Chara cteristics Fig 8. Turn- O n C har acteristics vs.
Gate Resistance
Fig 9. Turn-O ff C har acteristics vs .
Gate Resistance Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characte ri st i cs vs.
Collector Current Fig 12. Turn- Off Ch aracteristi cs vs.
Collector Current
10 15 20 25 30 35 40
10
100
200
Ton
Tr
Common Emitter
VCC = 300V, VGE = ±15V
RG = 10Ω
TC = 25℃
TC = 125℃
Switching Time [ns]
Collector Curren t, IC [A]
SGH40N60UFD Rev. A1
SGH40N60UFD
©2002 Fairchild Semiconductor Corporation
0306090120
0
3
6
9
12
15
300 V
200 V
VCC = 100 V
Common Emitter
RL = 15 Ω
TC = 25℃
Gate - Emitter Vo ltage, V
GE [ V ]
Gate Charge , Qg [ nC ]
10-5 10-4 10-3 10-2 10-1 100101
1E-3
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Therm al R esp onse, Zthjc [℃/W]
Rectangu lar Pulse Duration [sec]
1 10 100 1000
0.1
1
10
100
500
Safe Operating Area
VGE=20V, TC=100oC
Collector Current, I
C [A]
Collector-Emitter Voltage, VCE [V]
0.3 1 10 100 1000
0.1
1
10
100
500
Single Nonrepetitive
Pulse TC = 2 5℃
Curves must be derated
linearly with increase
in tem pe rat ur e
50us
100us
1㎳
DC Operation
IC MAX. (Continuous)
IC MAX. (Pulsed)
Collector Curr ent, I
C [A ]
Collector-Emitter Voltage, VCE [V]
10 15 20 25 30 35 40
10
100
1000
3000
Eoff
Eon
Eon
Eoff
Common Emitter
VCC = 300V, VGE = ±15V
RG = 10Ω
TC = 25℃
TC = 125℃
Swi tc hing Loss [uJ]
Collector Current, IC [A]
Fig 14. Gate C harge Characteristics
Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Du ty fact or D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
Fig 17. Transien t Therma l Impedance of IGBT
SGH40N60UFD Rev. A1
SGH40N60UFD
©2002 Fairchild Semiconductor Corporation
100 1000
20
40
60
80
100
120 VR = 20 0V
IF = 15A
TC = 25℃
TC = 100℃
Reverce Recov ery Time, t
rr [ns]
di/dt [A/us]
100 1000
1
10
100 VR = 200V
IF = 15A
TC = 25℃
TC = 100℃
Reverse Recovery Current, I
rr [A]
di/dt [A/us]
100 1000
0
200
400
600
800 VR = 200V
IF = 15A
TC = 25℃
TC = 100℃
Stor ed Rec overy Charge, Q
rr [nC]
di/dt [A/us]
1
10
100
0123
TC = 25℃
TC = 100℃
Forward Voltage Drop, VF [V]
Forward Current, I
F [A]
Fig 19. R everse Recovery C urrentFig 18. Forward Characteristics
Fig 20. Stored Charge Fig 21. Reverse Recovery Time
©2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1
SGH40N60UFD
Mechanical Dimensions
Dimensions in Millimeters
TO-3PN
TRADEMARKS
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As used herein:
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which, (a) are intended f or surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identific a tion Pr oduct Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reser ves the right to make changes at
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The datasheet is printed for reference information only.
Rev. H5©2002 Fairchild Semiconductor Corporation
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