Product Bulletin OP800A June 1996 GP. OPTEK NPN Silicon Phototransistors Features Narrow receiving angle Variety of sensitivity ranges Enhanced temperature range TO-18 hermetically sealed package Mechanically and spectrally matched to the OP 130 and OP230 series LED's TX-TXV process available (see Hi-Rel section) Description The OP800 series devices consist of NPN silicon phototransistors mounted in hermetically sealed packages. The narrow receiving angle provides excellent on-axis coupling. These devices are 100% tested using infrared light for close correlation with Optek GaAs and GaAlAs emitters. TO-18 packages offer high power dissipation and superior hostile environment operation. The base lead is bonded to enable conventional transistor biasing. Types OP800A, OP800B, OP800C, OP800D -230 (5.84) .068 (1.73) 745 (114) -209 (5 3t) 202 (5.13) @ 045 (1 14) -187 (4.75) COLLECTOR 4) (CASES g 10g (2.5 ds o48 (1.22) 028 (0.71) go 18 (4.75) 1173 (4.55) oH , 046 (1.17) -019 (0.48) A (0.91) O16 (0.413 2 PLACES EMITTER ~> 030 (0.76) be 500 (12. 70) 45 MAX MIN THIS DIMENSION CONTROLLED AT HOUSING SURFACE. DIMENSIONS ARE IN INCHES (MILLIMETERS) Absolute Maximum Ratings (Ta = 25 C unless otherwise noted) Collector-Base Voltage. ... 0... 6. eee ee tenet eee eens 30 V Collector-Emitter Voltage... 0... ee eee ene 30 V Emitter-Base Voltage... 6... ee eee eee tee 5V Emitter-Collector Voltage... 6. eee cee e eens 5V Continuous Collector Current... ........00.. 0. cee eee teen eeee 50 mA Storage Temperature Range .......... 2... ccc e eee eee es -65 C to +150 C Operating Temperature Range ..............0. 200-2 e eee eee -65 C to +125C 260 c) 250 mw) Notes: (1} RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. (2} Derate linearly 2.5 mW/ C above 25 C. (3) Junction temperature maintained at 25 C. (4) Light source is a GaAIAs LED, 890 nm peak emission wavelength, providing a 0.5 mW/cm* radiant intensity on the unit under test. The intensity levet is not necessarily uniform over the lens area of the unit under test. Typical Performance Curves Coupling Characteristics Typical Spectral R ypical Spectral Response of OP130 and OP800 0 a 1.0 / t,= 50MA Voge SV 2 cE * @ \ < a8 T,= 25C 2 frst a = S 0 308 3 E od Bos @ = 2 5 s = a2 3 . @n Q Q O2 04 O86 08 10 0 100 00 500 bas 10 DISTANCE BETWEEN LENS TIPS Inches Wavelength - nm Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 3-40 (972) 323-2200 Fax (972) 323-2396Types OP800A, OP800B, OP800C, OP800D Electrical Characteristics (Ta = 25 C unless otherwise noted) SYMBOL PARAMETER MIN | TYP | MAX | UNITS TEST CONDITIONS Icon; On-State Collector Current | OP8O0D | 0.45 _ | mA gpsoog | 090) | 380 | MA Ween 5 . E4205 mila OPS00A | 3.60 mA IcEO Collector Dark Current 100 nA |VcE=10V, Ee=0 ViBR)cEO | Collector-Emitter Breakdown Voltage 30 Vo lig = 100 yA Visr)cBo |Collector-Base Breakdown Voltage 30 Vs |itc = 100 pA Viaryeco | Emitter-Collector Breakdown Voltage 5.0 Vs|ie=100 pA ViaR)EBO | Emitter-Base Breakdown Voltage 5.0 Vs|lg = 100 pA Vcesan |Coltector-Emitter Saturation Voltage 0.40) V_ lig =0.15 MA, Es = 0.5 mwicm?4) tr Rise Time 7.0 ns |Vcc=V, Io = 0.80 mA, tr Fall Time | 7.0 us |RL= 100 Q, See Test Circuit Typical Performance Curves Collector Dark Current Wormatized Collector Current Coliscter Current vs. Ambient Temperature vs. Ambient Temperature vs. lrradiance 100 y VoE= 5 We-sov| | | YY = Vog = 10V / & = go fr LED = OP290 @ > ~ 890 nm ' 490 FE cE = < PW = 100 ys, dic. = 0.1% z E70 YY 3 = | MEASURED 25 ws INTO PULSE. = /| = L257 NORMALIZED AT Ta = 25C a 2 & x | 4 = 20 S 8 z <= Qo 5 g g V 5 Fi 3 10 L . a $ 1 20! a 1 25 A 5 2 / 0 0 20.40 60 a0 100 120 140 -0 -25 0 28 50 75 100 125 0 1 2 3 4 5 6 Ta AMBIENT TEMPERATURE C Ta AMBIENT TEMPERATURE C - _ IRRADIANCE mWicm? Rise and Fail Time Normalized Collector Current Switching Time vs. Load Resistance vs. Angular Displacement Test Circuit 70 Voc = 5 V TesT Van 1 = 890 se Veo -5 FREQUENCY = 100 Hz Ig = 100 mA : PULSE WIDTH = 1 ms i Tee -5 9 50 LED = OP290C LENS TO 16 z d= B90 nm 0,7 | DISTANCE - 8 2 1 So meron ns 2 FR- 00 8 tise time of lesa than = 500 ns. LED outpet is 1 Z . adhusted until Ic = 0.8 mA. = 10 0 0 = 2.000 6,000 10,000 46 30 18 0 18 30 45 Fit LOAD RESISTANCE Ohms 8 ANGULAR DISPLACEMENT Deg. tek reserves the right to make changes at any time in order to improve design and to ly the best product ible. Optek Technology, Inc. 1215 W. Crosby Road Carroliton, Texas 75006 (972)323-2200 Fax (972)323-2396 3-41