FEATURES
DTrenchFETr Power MOSFET
DUltra-Low rSS(on)
DESD Protected: 4000 V
DNew MICRO FOOTr Chipscale Packaging Reduces
Footprint Area, Profile (0.65 mm) and On-Resistance
Per Footprint Area
APPLICATIONS
DBattery Protection Circuit
1-2 Cell Li+/LiP Battery Pack for Portable Devices
Si8902EDB
Vishay Siliconix
Document Number: 71862
S-40861—Rev. F, 03-May-04
www.vishay.com
1
Bi-Directional N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VS1S2 (V) rS1S2(on) (W) IS1S2 (A)
0.045 @ VGS = 4.5 V 5.0
20
0.048 @ VGS = 3.7 V 4.8
20
0.057 @ VGS = 2.5 V 4.4
0.072 @ VGS = 1.8 V 3.9
1
G2
S2
G1
S1
N-Channel
4 kW
4 kW
MICRO FOOT
Device Marking:
8902E = P/N Code
xxx = Date/Lot Traceability Code
S2S2
Bump Side View
G2G1
4
3
5
6
S1S1
2
Backside View
8902E
xxx
Pin 1 Identifier
Ordering Information: Si8902EDB-T2—E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Source1—Source2 Voltage VS1S2 20
V
Gate-Source Voltage VGS "12
V
Continuous Source1
Source2 Current (TJ
=
150
_
C)
aTA = 25_C
IS1S2
5.0 3.9
C
on
ti
nuous
S
ource
1
S
ource
2 C
urren
t (T
J
=
150_C)a
TA = 85_C
I
S1S2 3.4 2.8 A
Pulsed Source1—Source2 Current ISM 40
Maximum Power Dissipationa
TA = 25_C
PD
1.7 1
W
Maximum Power Dissipationa
TA = 85_CPD0.8 0.5 W
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150
Package Reflow Conditionsc
VPR 215 _C
Package Reflow Conditionsc
IR/Convection 220
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Mi J ti tAbit
a
t v 5 sec
R
60 75
Maximum Junction-to-Ambienta
Steady State RthJA 95 120 _C/W
Maximum Junction-to-FootbSteady State RthJF 18 22
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. The Foot is defined as the top surface of the package.
c. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
Si8902EDB
Vishay Siliconix
www.vishay.com
2 Document Number: 71862
S-40861—Rev. F, 03-May-04
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VSS = VGS, ID = 980 mA 0.45 1.0 V
Gate Body Leakage
IGSS
VSS = 0 V, VGS = "4.5 V "4mA
Gate-Body Leakage IGSS VSS = 0 V, VGS = "12 V "10 mA
Zero Gate Voltage Source Current
IS1S2
VSS = 20 V, VGS = 0 V 1
Zero Gate Voltage Source Current IS1S2 VSS = 20 V, VGS = 0 V, TJ = 85_C 5 mA
On-State Source CurrentaIS(on) VSS = 5 V, VGS = 4.5 V 5 A
VGS = 4.5 V, ISS = 1 A 0.038 0.045
Source1 Source2 On State Resistancea
r
VGS = 3.7 V, ISS = 1 A 0.041 0.048
Source1—Source2 On-State ResistancearS1S2(on) VGS = 2.5 V, ISS = 1 A 0.048 0.057 W
VGS = 1.8 V, ISS = 1 A0.060 0.072
Forward Transconductanceagfs VSS = 10 V, ISS = 1 A 20 S
Dynamicb
Turn-On Delay Time td(on) 1 1.5
Rise Time trV
SS
= 10 V, RL = 10 W3 4.5
Turn-Off Delay Time td(off)
VSS = 10 V
,
RL = 10 W
ISS ^ 1 A, VGEN = 4.5 V, RG = 6 W17 26 ms
Fall Time tf10 15
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
100
10,000
Gate Current vs. Gate-Source Voltage
0
4
8
12
16
20
0 3 6 9 12 15
Gate-Current vs. Gate-Source Voltage
VGS Gate-to-Source Voltage (V)
0.1
1
10
1,000
VGS Gate-to-Source Voltage (V)
Gate Current (IGSS mA)
0369 15
TJ = 25_C
TJ = 150_C
Gate Current (mA)IGSS
IGSS @ 25_C (mA)
12
Si8902EDB
Vishay Siliconix
Document Number: 71862
S-40861—Rev. F, 03-May-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
2
4
6
8
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.00
0.02
0.04
0.06
0.08
0.10
0246810
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.6
0.8
1.0
1.2
1.4
1.6
50 25 0 25 50 75 100 125 150
VGS = 5 thru 1.5 V
25_C
TC = 125_C
VGS = 4.5 V
IS1S2 = 1 A
VGS = 4.5 V
VGS = 2.5 V
55_C
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
VDS Drain-to-Source Voltage (V)
Drain Current (A)ID
VGS Gate-to-Source Voltage (V)
Drain Current (A)ID
On-Resistance (rDS(on) W)
ID Drain Current (A)
On-Resistance vs. Junction Temperature
TJ Junction Temperature (_C)
(Normalized)
On-Resistance (rDS(on) W)
VGS = 1.8 V
1 V
VGS = 3.7 V
0.00
0.02
0.04
0.06
0.08
0.10
012345
IS1S2 = 1 A
On-Resistance vs. Gate-to-Source Voltage
On-Resistance (rDS(on) W)
VGS Gate-to-Source Voltage (V)
IS1S2 = 5 A
0.4
0.3
0.2
0.1
0.0
0.1
0.2
50 25 0 25 50 75 100 125 150
IS1S2 = 980 mA
Threshold Voltage
Variance (V)VGS(th)
TJ Temperature (_C)
Si8902EDB
Vishay Siliconix
www.vishay.com
4 Document Number: 71862
S-40861—Rev. F, 03-May-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
5
30
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
20
25
1031021 10 600101
104100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. PER UNIT BASE = RTHJA = 95_C/W
3. TJM TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
1 1000100.10.01
15
1031021101
104
2
1
0.1
0.01
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
100
10
VDS Drain-to-Source Voltage (V)
100
0.1
0.1 1 10 100
Limited by rDS(on)
0.01
1
TA = 25_C
Single Pulse
0.1 s
1 s
10 s
dc
Drain Current (A)ID
0.01 s
Safe Operating Area
0.001 s
0.0001 s
10
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
IDM Limited
ID(on)
Limited
BVDSS Limited
Si8902EDB
Vishay Siliconix
Document Number: 71862
S-40861—Rev. F, 03-May-04
www.vishay.com
5
PACKAGE OUTLINE
MICRO FOOT: 6-BUMP (2 X 3, 0.8-mm PITCH)
Recommended Land
Mark on Backside of Die
e
e
6 0.30 X 0.31
Note 3
Solder Mask 0.4
8902E
XXX
D
E
s e
e
s
Bump Note 1
A
A2
A1
NOTES (Unless Otherwise Specified):
1. 6 solder bumps are Eutetic 63Sn/37Pb with diameter 0.37 0.41 mm
2. Backside surface is coated with a Ag/Ni/Ti layer
3. Non-solder mask defined copper landing pad.
4. Laser marks on the silicon die back
e
Note 2
b Diameter
e
MILLIMETERS* INCHES
Dim Min Max Min Max
A0.600 0.650 0.0236 0.0256
A10.260 0.290 0.102 0.114
A20.340 0.360 0.0134 0.0142
b0.370 0.410 0.0146 0.0161
D1.520 1.600 0.0598 0.0630
E2.320 2.400 0.0913 0.0945
e0.750 0.850 0.0295 0.0335
s0.380 0.400 0.0150 0.0157
* Use millimeters as the primary measurement.