Si8902EDB
Vishay Siliconix
www.vishay.com
2 Document Number: 71862
S-40861—Rev. F, 03-May-04
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VSS = VGS, ID = 980 mA 0.45 1.0 V
VSS = 0 V, VGS = "4.5 V "4mA
Gate-Body Leakage IGSS VSS = 0 V, VGS = "12 V "10 mA
Zero Gate Voltage Source Current
VSS = 20 V, VGS = 0 V 1
Zero Gate Voltage Source Current IS1S2 VSS = 20 V, VGS = 0 V, TJ = 85_C 5 mA
On-State Source CurrentaIS(on) VSS = 5 V, VGS = 4.5 V 5 A
VGS = 4.5 V, ISS = 1 A 0.038 0.045
Source1 Source2 On State Resistancea
VGS = 3.7 V, ISS = 1 A 0.041 0.048
Source1—Source2 On-State ResistancearS1S2(on) VGS = 2.5 V, ISS = 1 A 0.048 0.057 W
VGS = 1.8 V, ISS = 1 A0.060 0.072
Forward Transconductanceagfs VSS = 10 V, ISS = 1 A 20 S
Dynamicb
Turn-On Delay Time td(on) 1 1.5
Rise Time trV
= 10 V, RL = 10 W3 4.5
Turn-Off Delay Time td(off)
,
ISS ^ 1 A, VGEN = 4.5 V, RG = 6 W17 26 ms
Fall Time tf10 15
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
100
10,000
Gate Current vs. Gate-Source Voltage
0
4
8
12
16
20
0 3 6 9 12 15
Gate-Current vs. Gate-Source Voltage
VGS − Gate-to-Source Voltage (V)
0.1
1
10
1,000
VGS − Gate-to-Source Voltage (V)
− Gate Current (IGSS mA)
0369 15
TJ = 25_C
TJ = 150_C
− Gate Current (mA)IGSS
IGSS @ 25_C (mA)
12