Order this document by MBRS340T3/D SEMICONDUCTOR TECHNICAL DATA . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. * * * * * * Motorola Preferred Device SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 40, 60 VOLTS Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.5 Volts Max @ 3.0 A, TJ = 25C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 217 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Shipped in 16 mm Tape and Reel, 2500 units per reel * Polarity: Notch in Plastic Body Indicates Cathode Lead * Marking: B34, B36 CASE 403-03 MAXIMUM RATINGS Rating Symbol MBRS340T3 MBRS360T3 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 60 Volts Average Rectified Forward Current IF(AV) 3.0 @ TL = 100C 4.0 @ TL = 90C Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 80 Amps TJ - 65 to +125 C Operating Junction Temperature THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Lead RJL 11 11 0.525 0.740 2.0 20 0.5 20 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (1) (iF = 3.0 A, TJ = 25C) VF Maximum Instantaneous Reverse Current (1) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 100C) iR Volts mA (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Rev 2 Device Rectifier Motorola, Inc. 1996 Data 1 100 50 I R , REVERSE CURRENT (mA) 3 2 TC = 100C 1 0.7 0.5 0.3 0.2 TC = 25C 0.1 0.07 0.05 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 100C 2 1 0.5 75C 0.2 0.1 0.05 0.02 0.01 1.1 1.2 1.3 1.4 TJ = 125C 20 10 5 25C 0 4 8 12 16 20 24 28 32 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current PF(AV) , AVERAGE POWER DISSIPATION (WATTS) i F , INSTANTANEOUS FORWARD CURRENT (AMPS 36 40 5 5 TJ = 100C 4 (CAPACITIVE LOAD) 3 SQUARE WAVE 10 DC IPK = 20 IAV 2 1 0 0 1 2 3 4 5 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 10 500 RATED VOLTAGE APPLIED RJC = 10.5C/W TJ = 125C 9 8 7 6 DC 5 4 3 SQUARE WAVE 2 TJ = 25C 300 200 100 1 0 40 50 60 70 80 90 100 110 120 TC, CASE TEMPERATURE (C) Figure 4. Current Derating (Case) 2 TYPICAL CAPACITANCE AT 0 V = 480 pF 400 C, CAPACITANCE (pF) I F(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 3. Power Dissipation 130 140 0 0 4 8 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Capacitance Rectifier Device Data PACKAGE DIMENSIONS S A D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. B C K P J INCHES DIM MIN MAX A 0.260 0.280 B 0.220 0.240 C 0.075 0.095 D 0.115 0.121 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.305 0.320 MILLIMETERS MIN MAX 6.60 7.11 5.59 6.10 1.90 2.41 2.92 3.07 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 7.75 8.13 H CASE 403-03 ISSUE B Rectifier Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. 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