APTG
F
1
65
D
A60D
1
APTGF165DA60D1 – Rev 0 July, 2003
APT website – http://www.advancedpower.com
1
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3
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 600 V
T
C
= 25°C 230
I
C
Continuous Collector Current T
C
= 80°C 165
I
CM
Pulsed Collector Current T
C
= 25°C 400
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 730 W
RBSOA Reverse Bias Safe Operation Area T
j
= 125°C 400A@420V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
6
7
5
4
3 2
1
VCES = 600V
IC = 165A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Non Punch Through (NPT) fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
- M5 power connectors
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
Boost Chopper
N
PT IGBT Power Module
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APTG
F
1
65
D
A60D
1
APTGF165DA60D1 – Rev 0 July, 2003
APT website – http://www.advancedpower.com
2
-
3
Electrical Characteristics All ratings @ T
j
= 25°C unless otherwise specified
Symbol
Characteristic Test Conditions Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage V
GE
= 0V, I
C
= 5 mA
600
V
T
j
= 25°C 1 500 µA
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V
V
CE
= 600V T
j
= 125°C 1 mA
T
j
= 25°C 2.0 2.5
V
CE(on)
Collector Emitter on Voltage V
GE
= 15V
I
C
= 200A T
j
= 125°C 2.2 V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 4 mA 4.5 6.5 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 400 nA
Dynamic Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
C
ies
Input Capacitance 9000
C
res
Reverse Transfer Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1MHz 800 pF
T
d(on)
Turn-on Delay Time 165
T
r
Rise Time 40
T
d(off)
Turn-off Delay Time 250
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 200A
R
G
= 1.5Ω 35
ns
T
d(on)
Turn-on Delay Time 180
T
r
Rise Time 50
T
d(off)
Turn-off Delay Time 285
T
f
Fall Time 40
ns
E
off
Turn off energy
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 200A
R
G
= 1.5Ω
6.3 mJ
Reverse diode ratings and characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 1.25 1.6
V
F
Diode Forward Voltage I
F
= 200A
V
GE
= 0V T
j
= 125°C 1.2 V
E
r
Reverse Recovery Energy I
F
= 200A
V
R
= 300V
di/dt =900A/µs T
j
= 125°C 4.1 mJ
T
j
= 25°C 12
Q
rr
Reverse Recovery Charge I
F
= 200A
V
R
= 300V
di/dt =900A/µs
T
j
= 125°C 19 µC
Thermal and package characteristics
Symbol
Characteristic Min Typ Max Unit
IGBT 0.17
R
thJC
Junction to Case Diode 0.29 °C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz 2500 V
T
J
Operating junction temperature range -40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 125
°C
For terminals M5 2 3.5
Torque Mounting torque To Heatsink M6 3 5 N.m
Wt Package Weight 180 g
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APTG
F
1
65
D
A60D
1
APTGF165DA60D1 – Rev 0 July, 2003
APT website – http://www.advancedpower.com
3
-
3
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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