Py 2022 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications 12698 Features: High breakdown voltage and high reliability * High switching speed * Capable of being mounted easily due to one-point fixing type plastic mold package Absolute Maximum Ratings at Ta=25C unit Collector to Base Voltage VcBo 1500 Vv Collector to Emitter Voltage VCEO 800 Vv Emitter to Base Voltage VEBO 7 Vv Collector Current Ic 5 A Peak Collector Current lop 16 A Collector Dissipation Pc TC=25C 120 W Junction Temperature T3 150 C Storage Temperature Tstg -55 to +150 C Electrical Characteristics at Ta=25C min typ max unit Collector Cutoff Current Icpo VcB=800V, Ip=0 10 uA Emitter Cutoff Current Ippo VEB=5V,Ic=0 1 mA Dc Current gain hre VcE=5V,Ic=1A 8 Gain Bandwidth Prodcut 7 VcR=10V,Ic=1A 3 MHz C-E Saturation Voltage VcE(sat) Ic=4A,Ip=0.8A 5 Vv B-E Saturation Voltage VBE (sat) Ic=4A,IR=0.8A 1.5 Vv C-B Breakdown Voltage V(BR)CBO Ic=5mA,Ip=0 1500 Vv C-E Breakdown Voltage V(BR)CEO Ic=100mA, RpR=0O0 800 Vv E-B Breakdown Voltage V(BR)EBO Ip=200mA,Ic=0 7 v Fall Time te Ic=4A,1p1=0.8A,Ip2=-1.6A 0.4 us Switching Time Test Circuit Case Outline 2022 (unit:mm} PW=20us , DutyS1% ouTPur -1p2 20.0 _ 1.0 tg1> tf os Fs 4 ot Mi RL ag p=s 4H 50 ii . 3 RE 5 Le15-0 20.0 I Lt E: Emitter Vpex-SV oc =200V B: Base 5267K1I/5033KI,MT No.1269-1/3Collector to Emitter 2SD1402 6 Ic - VCE 6 Ic - V < < I, ,5 Yipee 15 9 pop [Lt 8 qt _ r o4 goon 24 u AgomA u ya gs oO | et u 200mA paneer 5 2 eens es) 2 ~ oO 0 @ 4 a 8 1 81 In=0 =0 O 2 Q 0 $1 2 3 4 5 6 7 8@ 9 wv 0 0.4 0.8 1.2 1.6 2.0 Collector to Emitter Voltage,Vcgp - V Collector to Emitter Voltage,Vce - V 6 Ic - VBE mo hre - Ic | Vom =5V| Vop=5V a ! \ 5 2 fas 7 ro . & 3 y KO oO 3? 70 4 of LP g 3 & uy S y 3 7 6 : i z 31 oO J 0 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.3 4-0 7 Base to Emitter Voltage,VBE - V Collector Current,I - A VcE{sat) - Ic VCE(sat) - I > > t 1 D wob 4 vo 10 & 10 oa a ~ w g EY y o $ mn a3 3 1.0 on 1.0 2 oO > > ag 9 34 3 % 2 2L Ta= 120C 5 0.1 3 0.1 AG 4 % a a 0. 1.0 10 0.1 1.0 10 Collector Current,Ic - A Collector Current,Ir -~ A - Switching Time - I 00 VCER - RBE 0 g Be _ a Ic=4A a Voo= 200V *%0 \ Ip 1} =0- 8A R Load 5 400 e = n 1200 N #1.0 a \ B 1000 | 2 N 2 NX 0 800 | a 4 z ol 275 5 3, 2 5 0.1 10% 2 0% Pao Pte % 710K" 800K 1000k 0.1 1.0 0 Collector to Emitter Voltage, VCER - V Base to Emitter Resistance,RpE - ohm Base Current,Ip2 - A2SD1402 Forward Bias AS 0 pus Qo 3 tH B R red oO Collector Current,Ic - A nS 0.1 Single Pulse =25 0 100 1000 Collector to Emitter Voltage,VcE - V Po -T 140 C a 120 = 1 NC oy v . % @ g@ NY ve ?, ?, 8, 60 oe a to 0 2 A NK a N\ M4 NN 4 0 N\ A NN Aa 0 _t 8 0 2 40 6 8 wo 3261200 140Ss*160 Ambient Temperature,Tag - C Reverse Bias AS 0 3 Ipp= lA Const Ip=5Ip,=S! C BI B2 O11 = 500KH Single Pulse 100 1000 Collector to Emitter Voltage,Vce - V Collector Current,IC - A Q