1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VP2106
VP2110
Note: See Package Outline section for dimensions.
Package Options
P-Channel Enhancement-Mode
Vertical DMOS FETs
TO-92
Applications
❏Motor controls
❏Converters
❏Amplifiers
❏Switches
❏Power supply circuits
❏Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Features
❏Free from secondary breakdown
❏Low power drive requirement
❏Ease of paralleling
❏Low CISS and fast switching speeds
❏Excellent thermal stability
❏Integral Source-Drain diode
❏High input impedance and high gain
❏Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
BVDSS /R
DS(ON) ID(ON)
BVDGS (max) (min) TO-92 TO-236AB* Die†
-60V 12Ω-0.5A VP2106N3 — —
-100V 12Ω-0.5A — VP2110K1 VP2110ND
Product marking for SOT-23:
P1A❋
where ❋ = 2-week alpha date code
Order Number / Package
†MIL visual screening available.
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Ordering Information
S G D
TO-236AB
(SOT-23)
top view
S
D
G
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
2
90%
10%
90%
90%
10% 10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
VP2106/VP2110
Switching Waveforms and Test Circuit
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja IDR*I
DRM
@ TA = 25°C°C/W °C/W
TO-236AB -120mA -400mA 0.36W 200 350 -120mA -400mA
TO-92 -0.25A -0.8A 0.74W 125 170 -0.25A -0.8A
* ID (continuous) is limited by max rated Tj.
Thermal Characteristics
Symbol Parameter Min Typ Max Unit Conditions
VP2110 -100
VP2106 -60
VGS(th) Gate Threshold Voltage -1.5 -3.5 V VGS = VDS, ID = -1.0mA
∆VGS(th) Change in VGS(th) with Temperature 5.8 6.5 mV/°CI
D = -1.0mA, VGS = VDS
IGSS Gate Body Leakage -1.0 -100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current -10 µAV
GS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON) ON-State Drain Current -0.50 -1.0 A VGS = -10V, VDS = -25V
RDS(ON) 11 15 VGS = -5V, ID = -0.1A
9.0 12 VGS = -10V, ID = -0.5A
∆RDS(ON) Change in RDS(ON) with Temperature 0.55 1.0 %/°CV
GS = -10V, ID = -0.5A
GFS Forward Transconductance 150 200 m VDS = -25V, ID = -0.5A
CISS Input Capacitance 45 60
COSS Common Source Output Capacitance 22 30 pF
CRSS Reverse Transfer Capacitance 3 8
td(ON) Turn-ON Delay Time 4 5
trRise Time 5 8
td(OFF) Turn-OFF Delay Time 5 9
tfFall Time 4 8
VSD Diode Forward Voltage Drop -1.2 -2.0 V ISD = -0.5A, VGS = 0V
trr Reverse Recovery Time 400 ns ISD = -0.5A, VGS = 0V
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
BVDSS Drain-to-Source
Breakdown Voltage
Electrical Characteristics (@ 25°C unless otherwise specified)
VI
D = -1.0mA, VGS = 0V
-1 mA
Static Drain-to-Source
ON-State Resistance
VGS = 0V, VDS = -25V
f = 1 MHz
VDD = -25V
ns ID = -0.5A
RGEN = 25Ω
Ω
Ω
3
Typical Performance Curves
VP2106/VP2110
Output Characteristics
-2.0
-1.6
-1.2
-0.8
-0.4
0
Saturation Characteristics
-1.0
-0.8
-0.6
-0.4
-0.2
-0
Maximum Rated Safe Operating Area
-0.1 -100-10-1.0
-0.01
-0.1
-1.0
-0.001
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0
0.001 100.01 0.1 1.0
Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature
0 15010050
1.0
0.5
0
1257525
TO-236AB
VDS = 25V
TO-236AB (DC)
TO-236AB (pulsed)
TO-92 (DC)
0 -10 -20 -30 -50-40 0-2-4-6 -10-8
TO-92 (pulsed)
250
200
150
100
50
0
0 -0.2 -0.4 -0.6 -1.0-0.8
-7V
-6V
-5V
-4V
-3V
-8V
-9V
-7V
-6V
-5V
-4V
-8V
-9V
T
A
= 25°C
TO-236AB
P
D
= 0.36W
T
A
= 25°C
TO-92
P
D
= 1.0W
T
A
= 25°C
TO-92
VGS = -10V
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
V
DS
(volts)
VGS
= -10V
G
FS
(millisiemens)
I
D
(amperes) T
A
(°C)
P
D
(watts)
T
A
= 125°C
T
A
= 25°C
T
A
= -55°C
V
DS
(volts)
I
D
(amperes)
t
p
(seconds)
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
VP2106/VP2110
Typical Performance Curves
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
100
75
50
25
0
C (picofarads)
0 -10 -20 -30 -40
0-2-4-6-8-10
-1.0
-0.8
-0.6
-0.4
-0.2
0
-50 0 50 100 150
-1.1
-1.0
20
16
12
8
4
0
1.4
1.2
1.0
0.8
0.6
-10
-8
-6
-4
-2
0
-50 0 50 100 150
35 pF
V
GS
= -10V
125°C
0 -0.2 -0.4 -0.6 -1.0-0.8
f = 1MHz
C
ISS
C
OSS
C
RSS
-0.9
101 pF
2.0
1.6
1.2
0.8
0.4
0
V
(th)
@ 1mA
R
DS(ON)
@ -10V, 0.5A
25°C
0
1.0 2.0
RDS(ON) (ohms)
BVDSS (normalized)
Tj (°C) ID (amperes)
BVDSS Variation with Temperature
V
GS
= -5V
Tj (°C)
VGS(th) (normalized)
V(th) and RDS Variation with Temperature
VGS (volts)
ID (amperes)
RDS(ON) (normalized)
V
DS
= -25V
T
A
= -55
°C
QG (nanocoulombs)
VGS (volts)
VDS (volts)
VDS
=
-40V
VDS
= -10V
