1N4099 THRU 1N4135 anp 1N4614 THRU1N4627 Es 500mW LOW NOISE SILION ZENER DIODES VOLTAGE RANGE 1.8 to 100 Volts FEATURES Zener voltage 1.8 to 100V x Low noise * Low reverse leakage MECHANICAL CHARACTERISTICS * CASE: Hermetically sealed glass case. DO 35. * FINISH; All external surfaces are corrosion resistant and leads solderable. . * THERMAL RESISTANCE: 200C/W (Typical) junction to lead at 0.375 inches from body in DO 35. Metallurgically bonded DO - 35s exhibit less than 100C/W at zero distance from body. * POLARITY: Banded end is cathode. * WEIGHT:0.2 grams * MOUNTING POSITIONS: Any MAXIMUM RATINGS Junction and Storage temperatures: - 65Cto + 200C DC Power Dissipation: 500mWw Power Derating:4.OmW/C above 50C in DO - 35 Forward Voltage @ 200mA:1.1 Volts (1N4089 1N4135) @ 100mA:1.0 Volts (1N4614 1N4627). DO-35 0.080 MAX. 2.08 DIA. 1.000 Foe MIN. | 175 TB ax. POLARITY. 444 MARK (CATHODE) 1.000 0.018/0.022 25400" 0.45770,559 0% * | i j Inch All dimensions in 4h * ELECTRICAL CHARCTERISTICS @ 25C NOMINAL MAXIMUM MAXIMUM ZENER MAXIMUM MAXIMUM ZENER ZENER ZENER TEMP. COEFF vEDEC | VOLTAGE iret IMPEDANCE REVERSE NOISE CURRENT OF ZENER NOTE 1 The JEDEC type TYPE NO. Vp @ I. CURRENT Za CURRENT DENSITY 1 VOLTAGE (Note 1) x (Note 2) e@ ke No @ ber naa uy numbers shown above have VOLTS uA OHMS uA vorts | uw /i mA ee a standard tolerance of + 5% N4614, 1. 4 7. 1 1 1 -0. . +N4615 re 3 1350 bo i 1 110 - 0.075 on the nominal! Zener volt 1N4616 2.2 250 1300 4.0 1 1 100 - 0.075 i i INS 22 200 190 30 1 i 100 78.075 age. Also available in 2% an iN4818 2.7 250 4500 1.0 1 1 $0. = 0.075 1% tolerance, suffix C and D TIN4619 3.0 250 1600 0.8 1 1 87 ~0.075 . . inezo 33 250 1850 75 1s 1 -9.0%5 respectively. Vz is measured : 1 : 1 -0. ; | 1 1N4622 3.9 250 1650 50 2 1 D 0060 with the diode in thermal 1NAez3 43 250 1600 4.0 2 1 7 0,080 equilibrium in 25C still air. 1N4624 47 250 1560 10.0 3 1 B 0.060+ 0.020 ines | 86 260 1400 ine a i 8 70.0000: 080 1 : . -0. +0. i ] 1N4627 62 250. 1200 10.0 5 5 61 ~0.010-+ 0.050 NOTE 2 Zener impedance is TNE 6.8 20 200 70.0 5.17 Es 0.060 derived by superimposing on 7.5 2 10.0 5.70 . 1Nai01 82 250 200 1.0 6.24 40 46 0.070 tz7,a 60 Hz rms a.c. current 41N4102 8.7 250 200 1.0 6.61 40 44 0.075 oy 1N4108 91 250 200 1.0 6.92 40 2 0.080 equal to 10% of Iz (25paa. 1N4104, 10. 250 200 1.0 7,60 40 B 0.080 c.). 1NAt08 2 280 200 | 32 4 2 0.080 1 05 1 : IIN4107 3 250 200 05 9.87 40 2 0.080 NOTE 3 Based upon 400mW 4N4108 14 250 200 0 10.65. 40 7 0.086 1 issi | ine 4 20 200 10.66 * a 0.086 maximum power dissipation 4N4110 16 250 100 05 12.15 My 24 0.085 at 75C lead temperature, al- inain 7 250 100 0 412.92 40 22 0.080 inst 8 2 109 % 13.67 a 0.08 lowance has peen made for 1N4113 1 : 14. Fi 1 i 1N4114 20 250. 150, 01 18.20 40 19 0.080 the higher vO tage assoc ate 1N4115 2 250 150 01 16.72 40 7 0.080 with operation at higher cur- IN4116. 24 250 150 .01 18.25 40 16 0.080 rt: 1N4117 2 250 150 01 19.00 40 15 0.090 rents. 1N4118 27 250 150 01 20.45 40 4 0.000 1N4119. 28 250 200 01 21.2 40 14 9.095 1N4120. 30 250 200 01 22.80 40 13 0.085 1N4121 3 260 200 01 25.08 40 12 0 OS 1N4122 6 250 200 01 7B 40 H 0.096 1N4123. 3 250 200 -O1 2.6 40 9.8 0.085 1N4124 a3 250 250 01 32.6 40 8.9 0.06 1N4125, 47 250 250 01 35.75 40 8.1 0.086 1N4126 51 250 300 01 33.78 40 75 0.100 1N4127 5 250 300 .O1 42.60 40 6.7 0.100 1N4128 60 20 400 01 46, 60 40 6.4 0.100 4N4129 2 250 500 ot 47.10 40 6.1 0.100 TN4130 250 700 OT 51.68 40 5.6 0.100 4N4131 7 250, 700 01 57.00 40 5.1 0.100 IN4132 82 250 800 01 62.32 AQ 4.6 0.100 INNS. a7 250 1000 01 66.12 40 4.4 0.100 TN4134 91 250 4200 01 68.16 40 4.2 0.100 100 250 1500 O14 7.0 4 3.8 0.100 x JEDEC Registered Data JINAN GUDE ELECTRONIC DEVICE CO., LTD.RATINGS AND CHARACTERISTIC CURVES (1N4099 THRU 1N4135,1N4614 THRU 1N4627) Noise density(N,)is specified in microvolts-rms per square-root-hertz. Actual measurement is performed using a 1 KH, to 3 KH, frequency bandpass filter at a constant Zener test current(|,,) at 25C ambient temperature. Np is cal- culated from the formula. BATTERY SHIELDED (=) POWER (+4) TEST O SUPPLY CIRCUIT (LOW NOISE SOURCE) AR LOAD ween n---t--+ FILTER fom2 KHz BP=t to 3 KHz a m a RATED POWER DISSIPATION-mW TRUE Vnoise VOLT Lead temperature T, (Cc) METER 3/8"trom body FIGURE 1 NOISE DENSITY MEASURE- FIGURE 2 POWER DERATING CURVE MENT CIRCUIT = Nw qi a 8 8 8 &88ss83_ ss TYPICAL CAPACITANCE (pF) NO & MONMKHDd % 10 20 30 40 50 60 70 80 90 100110 ZENER VOLTAGE Vz (V) FIGURE 3 CAPACITANCE VS.ZENER VOLTAGE (TYPICAL) JINAN GUDE ELECTRONIC DEVICE CoO., LTD.