IRF1312/S/L
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 92 ––– ––– S VDS = 25V, ID = 57A
QgTotal Gate Charge –– – 93 140 ID = 57A
Qgs Gate-to-Source Charge ––– 36 ––– nC VDS = 40V
Qgd Gate-to-Drain ("Miller") Charge ––– 34 ––– VGS = 10V,
td(on) Turn-On Delay Time ––– 25 ––– VDD = 40V
trRise Time ––– 130 ––– ID = 57A
td(off) Turn-Off Delay Time ––– 47 ––– RG = 4.5Ω
tfFall Time ––– 51 ––– VGS = 10V
Ciss Input Capacitance ––– 5450 ––– VGS = 0V
Coss Output Capacitance ––– 550 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 340 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 1910 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 380 ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 620 ––– VGS = 0V, VDS = 0V to 64V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy ––– 250 mJ
IAR Avalanche Current––– 57 A
EAR Repetitive Avalanche Energy––– 21 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, IS = 57A, VGS = 0V
trr Reverse Recovery Time ––– 64 96 ns TJ = 25°C, IF = 57A
Qrr Reverse RecoveryCharge ––– 150 230 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
95
380 A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.078 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance – –– 6.6 10 mΩVGS = 10V, ID = 57A
VGS(th) Gate Threshold Voltage 3.5 ––– 5. 5 V VDS = VGS, ID = 250µA
––– ––– 1.0 µA VDS = 76V, VGS = 0V
––– ––– 250 VDS = 64V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
IGSS
IDSS Drain-to-Source Leakage Current