ISP815X, ISP825X, ISP845X ISP815, ISP825, ISP845 HIGH DENSITY MOUNTING PHOTODARLINGTON OPTICALLY COUPLED ISOLATORS APPROVALS z UL recognised, File No. E91231 Package Code FF 'X' SPECIFICATION APPROVALS z VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 z ISP815X ISP815 2.54 Dimensions in mm 7.0 6.0 1 2 4 3 1.2 5.08 4.08 Certified to EN60950 by Nemko - Certificate No. P01102465 7.62 4.0 3.0 13 Max 0.5 DESCRIPTION 3.0 The ISP815, ISP825, ISP845 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photodarlingtons in space efficient dual in line plastic packages. FEATURES z Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Current Transfer Ratio (600%min) z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z All electrical parameters 100% tested z Custom electrical selections available APPLICATIONS z Computer terminals z Industrial systems controllers z Measuring instruments z Signal transmission between systems of different potentials and impedances 0.26 0.5 ISP825X ISP825 3.35 2.54 7.0 6.0 1 2 3 8 7 6 4 5 1.2 10.16 9.16 7.62 4.0 3.0 0.5 13 Max 3.0 0.26 3.35 0.5 ISP845X ISP845 OPTION SM OPTION G 7.62 2.54 1.2 20.32 19.32 0.6 0.1 10.46 9.86 1.25 0.75 2 15 14 13 5 12 6 11 7 8 10 9 7.62 4.0 3.0 0.26 10.16 16 3 4 7.0 6.0 SURFACE MOUNT 1 13 Max 0.5 3.0 0.5 3.35 0.26 ISOCOMCOMPONENTSLTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 27/11/08 DB92414 ABSOLUTEMAXIMUMRATINGS (25C unless otherwise specified) Storage Temperature -55C to + 125C Operating Temperature -30C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUTDIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current Power Dissipation 35V 6V 80mA 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 1.4 V IF = 20mA 10 A VR = 4V 35 V IC = 1mA 6 V IE = 100A 100 nA VCE = 20V 7500 % 1mA IF , 2V VCE 1.0 V 20mA IF , 5mA IC VRMS VPK See note 1 See note 1 VIO = 500V (note 1) s s VCE = 2V , IC = 10mA, RL= 100 Reverse Current (IR) Output Collector-emitter Breakdown (BVCEO) TEST CONDITION ( Note 2 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Coupled Current Transfer Ratio (CTR) (Note 2) 600 Collector-emitter SaturationVoltageVCE (SAT) Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Output Rise Time Output Fall Time Note 1 Note 2 27/11/08 tr tf 60 53 300 250 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92414 150 100 50 0 -30 0 25 50 75 100 125 5mA 50mA 5 =1mA 6 TA = 25C Ic Collector-emitter saturation voltage VCE(SAT) (V) Collector power dissipation PC (mW) 200 30mA Collector-emitter Saturation Voltage vs. Forward Current Collector Power Dissipation vs. Ambient Temperature 4 3 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Forward current IF (mA) Ambient temperature TA ( C ) Collector Current vs. Collector-emitter Voltage Forward Current vs. Ambient Temperature 60 TA = 25C 100 Collector current IC (mA) Forward current IF (mA) 50 40 30 20 10 80 10mA 60 5mA 2mA 40 20 IF = 1mA 0 0 -30 0 25 50 75 100 0 125 Collector-emitter Saturation Voltage vs. Ambient Temperature 1.2 0.8 0.6 0.4 0.2 0 4 5 1.5 IF = 1mA VCE = 2V 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( C ) 27/11/08 3 Relative Current Transfer Ratio vs. Ambient Temperature IF = 20mA IC = 5mA 1.0 2 Collector-emitter voltage VCE ( V ) Relative current transfer ratio Collector-emitter saturation voltage VCE(SAT) (V) Ambient temperature TA ( C ) 1 100 -30 0 25 50 75 Ambient temperature TA ( C ) DB92414 100