©2008 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGH20N60UFD Rev. A1
FGH20N60UFD 600V, 20A Field Stop IGBT
April 2011
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Symbol Description Ratings Units
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ± 20 V
IC
Collector Current @ TC = 25oC 40 A
Collector Current @ TC = 100oC 20 A
ICM (1) Pulsed Collector Current @ TC = 25oC 60 A
IF
Diode Forward Current @ TC = 25oC 20 A
Diode Forward Current @ TC = 100oC 10 A
IFM (1)
Pulsed Diode Maximum Forward Current
60 A
PD
Maximum Power Dissipation @ TC = 25oC 165 W
Maximum Power Dissipation @ TC = 100oC 66 W
TJ Operating Junction Temperature -55 to +150 oC
Tstg Storage Temperature Range -55 to +150 oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
G
E
C
EC
G
COLLECTOR
(FLANGE)
FGH20N60UFD
600V, 20A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.8V @ IC = 20A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induc-
tion Heating, UPS, SMPS and PFC applications where low con-
duction and switching losses are essential.
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FGH20N60UFD Rev. A1
FGH20N60UFD 600V, 20A Field Stop IGBT
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Device Marking Device Package
Packaging
Type Qty per Tube
Max Qty
per Box
FGH20N60UFD FGH20N60UFDTU TO-247 Tube 30ea -
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250mA 600 - - V
DBVCES
DTJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 250mA- 0.6 - V/oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250mA, VCE = VGE 4.0 5.0 6.5 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 20A, VGE = 15V - 1.8 2.4 V
IC = 20A, VGE = 15V,
TC = 125oC- 2.0 - V
Dynamic Characteristics
Cies Input Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
- 940 - pF
Coes Output Capacitance - 110 - pF
Cres Reverse Transfer Capacitance - 40 - pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400V, IC = 20A,
RG = 10W, VGE = 15V,
Inductive Load, TC = 25oC
- 13 - ns
trRise Time - 17 - ns
td(off) Turn-Off Delay Time - 87 - ns
tfFall Time - 32 64 ns
Eon Turn-On Switching Loss - 0.38 - mJ
Eoff Turn-Off Switching Loss - 0.26 - mJ
Ets Total Switching Loss - 0.64 - mJ
td(on) Turn-On Delay Time
VCC = 400V, IC = 20A,
RG = 10W, VGE = 15V,
Inductive Load, TC = 125oC
- 13 - ns
trRise Time - 16 - ns
td(off) Turn-Off Delay Time - 92 - ns
tfFall Time - 63 - ns
Eon Turn-On Switching Loss - 0.41 - mJ
Eoff Turn-Off Switching Loss - 0.36 - mJ
Ets Total Switching Loss - 0.77 - mJ
QgTotal Gate Charge
VCE = 400V, IC = 20A,
VGE = 15V
- 63 - nC
Qge Gate to Emitter Charge - 7 - nC
Qgc Gate to Collector Charge - 32 - nC
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FGH20N60UFD Rev. A1
FGH20N60UFD 600V, 20A Field Stop IGBT
Thermal Characteristics
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Typ. Max. Units
RqJC(IGBT) Thermal Resistance, Junction to Case - 0.76 oC/W
RqJC(Diode) Thermal Resistance, Junction to Case - 2.51 oC/W
RqJA Thermal Resistance, Junction to Ambient - 40 oC/W
Symbol Parameter Test Conditions Min. Typ. Max
Unit
s
VFM Diode Forward Voltage IF = 10A TC = 25oC - 1.9 2.5 V
TC = 125oC - 1.7 -
trr Diode Reverse Recovery Time
IES =10A, dIES/dt = 200A/ms
TC = 25oC - 34 - ns
TC = 125oC - 57 -
Qrr Diode Reverse Recovery Charge TC = 25oC - 41 - nC
TC = 125oC - 96 -
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FGH20N60UFD Rev. A1
FGH20N60UFD 600V, 20A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
0.0 1.5 3.0 4.5 6.0
0
20
40
60
20V
TC = 25oC
15V
12V
10V
VGE = 8V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
0.0 1.5 3.0 4.5 6.0
0
20
40
60
20V
TC = 125oC
15V
12V
10V
VGE = 8V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
01234
0
20
40
60
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
4 6 8 10 12
0
20
40
60
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Gate-Emitter Voltage,VGE [V]
25 50 75 100 125
0.8
1.2
1.6
2.0
2.4
2.8
3.2
40A
20A
IC = 10A
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Collector-EmitterCase Temperature, TC [oC]
0 4 8 12 16 20
0
4
8
12
16
20
IC = 10A
20A
40A
Common Emitter
TC = -40oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
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FGH20N60UFD Rev. A1
FGH20N60UFD 600V, 20A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
0 4 8 12 16 20
0
4
8
12
16
20
40A
IC = 10A
20A
Common Emitter
TC = 125oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
0 4 8 12 16 20
0
4
8
12
16
20
IC = 10A
20A
40A
Common Emitter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
0.1 1 10
0
500
1000
1500
2000
2500
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
Coes
Cies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
30 0 20 40 60 80
0
3
6
9
12
15
Common Emitter
TC = 25oC
300V
200V
VCC = 100V
Gate-Emitter Voltage, VGE [V]
Gate Charge, Qg [nC]
0 10 20 30 40 50 60
5
10
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
td(on)
tr
Switching Time [ns]
Gate Resistance, RG [W]
1 10 100 1000
0.01
0.1
1
10
100
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
1ms
10 ms
DC
10ms
100ms
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V]
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FGH20N60UFD Rev. A1
FGH20N60UFD 600V, 20A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
Figure17. Switching Loss vs. Figure18. Turn off Switching
Collector Current SOA Characteristics
0 10 20 30 40 50 60
10
100
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC td(off)
tf
Switching Time [ns]
Gate Resistance, RG [W]
0 10 20 30 40
3
10
100
200
Common Emitter
VGE = 15V, RG = 10W
TC = 25oC
TC = 125oC
tr
td(on)
Switching Time [ns]
Collector Current, IC [A]
0 10 20 30 40
10
100
300
Common Emitter
VGE = 15V, RG = 10W
TC = 25oC
TC = 125oC
td(off)
tf
Switching Time [ns]
Collector Current, IC [A]
0 10 20 30 40 50 60
0.1
1
3
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
Eon
Eoff
Switching Loss [mJ]
Gate Resistance, RG [W]
1 10 100 1000
1
10
100
Safe Operating Area
VGE = 15V, TC = 125oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
0 10 20 30 40
0.02
0.1
1
10
Common Emitter
VGE = 15V, RG = 10W
TC = 25oC
TC = 125oC Eon
Eoff
Switching Loss [mJ]
Collector Current, IC [A]
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FGH20N60UFD Rev. A1
FGH20N60UFD 600V, 20A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics Figure 20. Reverse Current
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
Figure 23.Transient Thermal Impedance of IGBT
0 100 200 300 400 500 600
1E-3
0.01
0.1
1
10
100
TC = 125oC
TC = 25oC
TC = 75oC
Reverse Current , IR [mA]
Reverse Voltage, VR [V]
01234
0.1
1
10
40
TJ = 75oC
TJ = 25oC
TC = 25oC
TC = 75oC
TC = 125oC
TJ = 125oC
Forward Voltage, VF [V]
Forward Current, IF [A]
0 5 10 15 20
0.01
0.02
0.03
0.04
0.05
200A/ms
di/dt = 100A/ms
Stored Recovery Charge, Qrr [nC]
Forward Current, IF [A]
0 5 10 15 20
10
20
30
40
50
60
200A/ms
di/dt = 100A/ms
Reverse Recovery Time, trr [ns]
Forward Current, IF [A]
1E-5 1E-4 1E-3 0.01 0.1 1
1E-3
0.01
0.1
1
0.2
0.5
0.1
0.05
0.01
0.02
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
t1
PDM
t2
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FGH20N60UFD Rev. A1
FGH20N60UFD 600V, 20A Field Stop IGBT
Mechanical Dimensions
TO247AB (FKS PKG CODE 001)
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Definition of Terms
AccuPower™
Auto-SPM™
AX-CAP™*
BitSiC®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
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FACT®
FAST®
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FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptiHiT™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM®
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SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
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The Power Franchise®
The Right Technology for Your Su ccess™
®
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TinyPower™
TinyPWM™
TinyWire™
TranSiC®
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
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Advance Information Formative / In Design Datasheet cont ains the design specifications for product development. Specifications
may change in any manner without notice.
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date. Fairchild Semiconductor reserves the right to make changes at any time without
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make changes at any time without notice to improve the design.
Obsolete Not In Produ ction Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only. Rev. I54
