VSMY1850 - Vishay [Semiconductors]

Document Number: 83397 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com

Rev. 1.0, 22-Dec-10 1

High Speed Infrared Emitting Diodes, 850 nm,

Surface Emitter Technology

VSMY1850

Vishay Semiconductors

DESCRIPTION

VSMY1850 is an infrared, 850 nm emitting diode based on

GaAlAs surface emitter chip technology with high radiant

intensity, high optical power and high speed, molded in

clear, untinted 0805 plastic package for surface mounting

(SMD).

FEATURES

• Package type: surface mount

• Package form: 0805

• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85

• Peak wavelength: λp = 850 nm

• High reliability

• High radiant power

• High radiant intensity

• High speed

• Angle of half sensitivity: ϕ = ± 60°

• Suitable for high pulse current operation

• 0805 standard surface-mountable package

• Floor life: 168 h, MSL 3, acc. J-STD-020

• Lead (Pb)-free reflow soldering

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

APPLICATIONS

• IrDA compatible data transmission

• Miniature light barrier

• Photointerrupters

• Optical switch

• Emitter source for proximity sensors

• IR touch panels

•IR Flash

• IR illumination

•3D TV

Note

• Test conditions see table “Basic Characteristics“

Note

• MOQ: minimum order quantity

22119

PRODUCT SUMMARY

COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)

VSMY1850 10 ± 60 850 10

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

VSMY1850 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805

** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902

www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 83397

2Rev. 1.0, 22-Dec-10

VSMY1850

Vishay Semiconductors High Speed Infrared Emitting Diodes,

850 nm, Surface Emitter Technology

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage VR5V

Forward current IF100 mA

Peak forward current tp/T = 0.1, tp = 100 μs IFM 200 mA

Surge forward current tp = 100 μs IFSM 1A

Power dissipation PV190 mW

Junction temperature Tj100 °C

Operating temperature range Tamb - 40 to + 85 °C

Storage temperature range Tstg - 40 to + 100 °C

Soldering temperature acc. figure 7, J-STD-020 Tsd 260 °C

Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 270 K/W

22108

amb

- Ambient Temperature (°C)

- Power Dissipation (mW)

120

160

200

020406080100

thJA

= 270 K/W

22109

amb

- Ambient Temperature (°C)

IF - Forward Current (mA)

100

120

020406080100

thJA

= 270 K/W

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Forward voltage IF = 100 mA, tp = 20 ms VF1.65 1.9 V

IF = 1 A, tp = 100 μs VF2.9 V

Temperature coefficient of VF

IF = 1 mA TKVF - 1.4 mV/K

IF = 10 mA TKVF - 1.18 mV/K

Reverse current IRnot designed for reverse operation μA

Junction capacitance VR = 0 V, f = 1 MHz,

E = 0 mW/cm2CJ125 pF

Radiant intensity IF = 100 mA, tp = 20 ms Ie51015mW/sr

IF = 1 A, tp = 100 μs Ie85 mW/sr

Radiant power IF = 100 mA, tp = 20 ms φe50mW

Temperature coefficient of radiant

power IF = 100 mA TKφe- 0.35 %/K

Angle of half intensity ϕ± 60 deg

Peak wavelength IF = 100 mA λp840 850 870 nm

Spectral bandwidth IF = 30 mA Δλ 30 nm

Temperature coefficient of λpIF = 30 mA TKλp0.25 nm

Rise time IF = 100 mA, 20 % to 80 % tr10 ns

Fall time IF = 100 mA, 20 % to 80 % tf10 ns

Virtual source diameter d 0.5 mm

Document Number: 83397 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com

Rev. 1.0, 22-Dec-10 3

VSMY1850

High Speed Infrared Emitting Diodes,

850 nm, Surface Emitter Technology Vishay Semiconductors

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 3 - Forward Current vs. Forward Voltage

Fig. 4 - Radiant Intensity vs. Forward Current

Fig. 5 - Relative Radiant Power vs. Wavelength

Fig. 6 - Relative Radiant Intensity vs. Angular Displacement

- Forward Voltage (V)

22097

- Forward Current (A)

0.001

0.01

0.1

0 0.5 1 1.5 2 2.5 3 3.5

tp = 100 µs

22110 IF - Forward Current (A)

Ie - Radiant Intensity (mW/sr)

0.1

100

1000

0.001 0.01 0.1 1

tp = 100 µs

λ - Wavelength (nm)

21776-1

Φe, rel - Relative Radiant Power

0.25

0.5

0.75

650 750 850 950

= 30 mA

0.4 0.2 0

e, rel

- Relative Radiant Intensity

94 8013

0.6

0.9

0.8

0°

30°

10° 20°

40°

50°

60°

70°

80°

0.7

1.0

ϕ - Angular Displacement

www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 83397

4Rev. 1.0, 22-Dec-10

VSMY1850

Vishay Semiconductors High Speed Infrared Emitting Diodes,

850 nm, Surface Emitter Technology

REFLOW SOLDER PROFILE

Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020

DRYPACK

Devices are packed in moisture barrier bags (MBB) to

prevent the products from moisture absorption during

transportation and storage. Each bag contains a desiccant.

FLOOR LIFE

Time between soldering and removing from MBB must not

exceed the time indicated in J-STD-020:

Moisture sensitivity: level 3

Floor life: 168 h

Conditions: Tamb < 30 °C, RH < 60 %

DRYING

In case of moisture absorption devices should be baked

before soldering. Conditions see J-STD-020 or label.

Devices taped on reel dry using recommended conditions

192 h at 40 °C (+ 5 °C), RH < 5 %.

PACKAGE DIMENSIONS in millimeters

100

150

200

250

300

0 50 100 150 200 250 300

Time (s)

Temperature (°C)

240 °C 245 °C

max. 260 °C

max. 120 s max. 100 s

217 °C

max. 30 s

max. ramp up 3 °C/s max. ramp down 6 °C/s

19841

255 °C

Drawing-No.: 6.541-5083.01-4

specications

according to DIN

technical drawings

1.25

0.35

0.85

Not indicated tolerances ± 0.1

1 1

1.2

0.6

Recommended solder pad

Footprint

0.6 0.6

0.82

0.625

Issue: 1; 29.03.10

Cathode Anode

Top View

Side View

Bottom View

22111

Document Number: 83397 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com

Rev. 1.0, 22-Dec-10 5

VSMY1850

High Speed Infrared Emitting Diodes,

850 nm, Surface Emitter Technology Vishay Semiconductors

BLISTER TAPE DIMENSIONS in millimeters

Drawing-No.: 9.700-5352.01-4

specications

according to DIN

technical drawings

Reel off direction

2 ± 0.05

Ø 1.55 ± 0.05

0.2 ± 0.05

0.94 4

1.75

3.5 ± 0.05

2.24

Not indicated tolerances ±0.1

1.45

Ø 1.1 + 0.1

Anode

Cathode

Issue: 1; 13.04.10

22112

www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 83397

6Rev. 1.0, 22-Dec-10

VSMY1850

Vishay Semiconductors High Speed Infrared Emitting Diodes,

850 nm, Surface Emitter Technology

REEL DIMENSIONS in millimeters

of the wheel is supplier specic.

Form of the leave open

Issue: 2; 26.04.10

Drawing-No.: 9.800-5096.01-4

specications

according to DIN

technical drawings

Ø 177.8 max.

Ø 55 min.

8.4 +2.5

8.4 +0.15

14.4 max.

Ø 13 + 0.5

- 0.2

1.5 min.

Ø 20.2 min.

Z 2:1

20875

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www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

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