2N190 = ON1916 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A --- --- --- --- 1 B 1.050 1.060 26.67 26.92 across flats Cc --- 1.161 --- 29.49 E D 5.850 6.144 149.10 156.06 E 6.850 7.375 173.99 187.33 F 797 827 20.24 21.01 G .276 .286 701 7.26 H --- .948 --- 24.08 J 425 499 10.80 12.67 2 K .260 .280 6.60 7.11 Dia. M 900 .600 12.70 15.24 : N .140 .150 3.56 3.81 = P --- .295 --- 7.49 TO209AA (TO-94) Note 1: 1/220 UNF3A Note 2: Full thread within 2 1/2 threads Microsemi Forward & Reverse Reverse Transient Catalog Number Repetitive Blocking Blocking . oN1909 95 95 e High dv/dt200 V/usec. 2N1910 50 50 1600 Amperes surge current 2N1911 100 100 Low forward on-state voltage 2N1912 150 150 Package conforming to TO209AA 2N1913 200 200 outline 2N1914 250 250 e . 2N1915 300 300 Economical for general purpose phase 2N1916 400 400 control applications To specify dv/dt higher than 200V/usec., contact factory. Electrical Characteristics Max. RMS on-state current IT(RMS) 110 Amps Tc = g7C Max. average on-state cur. yay) 70 Amps Tc = 87C Max. peak on-state voltage VIM 1.6 Volts ITM = 220 A(peak) Max. holding current 1H 200 mA Max. peak one cycle surge current ITSM 1600 A Tce = 87C, 60 Hz Max. I2t capability for fusing I2 10,624A2S t = 8.3 ms Thermal and Mechanical Characteristics Operating junction temp range Ty -65C to 125C Storage temperature range TSTG 65C to 150C Maximum thermal resistance Reuc 0.40C/W Junction to case Typical thermal resistance (greased) Recs 0.20C/W Case to sink Mounting torque 100-130 inch pounds Weight 3.6 ounces (102.0 grams) typical e LAWRENCE 6 Lake Street Lawrence, MA 01841 _94_ MICFOSCIM | Rs sm 04-24-07 Rew FAX: (978) 689-0805 www.microsemi.comZ2ZNI9GO9 2N197T6 Switching Critical rate of rise of onstate current (note 1) di/dt 100A /usec. TJ = 125C Typical delay time (note 1) td 3.0 usec. 5 Typical circuit commuted turnoff time (note 2) tq 100 usec. TJ = 125C Note 1: 'TM = 50A, YD = VDRM. YGT = 12V open circuit, 20 ohm0.1 usec. rise time Note 2: 'TM = 50A, di/dt = 5A/usec., VR during turnoff interval = 50V min., reapplied dv/dt = 20V/usec., linear to rated VDRM, VGT = OV Triggering Max. gate voltage to trigger VET 3.0V Ty = 25C Max. nontriggering gate voltage Ve 0.25V Ty = 125C Max. gate current to trigger | GT 100mA TJ = 25C Max. peak gate power PoM 15W Average gate power PG(AV) 3.0W tp = 10 usec. Max. peak gate current | GM 4,0A Max. peak gate voltage (forward) VGM 10V Max. peak gate voltage (reverse) Vem 5.0V Blocking Max. leakage current lDRM,! RRM 10mA Ty =125C & VDRM,VRRM Max. reverse leakage IDRM,| RRM 100uA Ty =25C & VDRM,YRRM Critical rate of rise of offstate voltage dv/dt 200V /usec. Ty =125C 04-24-07 Rev. 1Z2N1909 Figure 1 Typical Forward OnState Characteristics 8000 6000 4000 1000 800 600 400 200 100 80 60 40 20 Instantaneous OnState Current Amperes 10 8 1.2 16 2.0 24 2.8 32 3.6 Instantaneous OnState Voltage Volts Figure 2 Forward Current Derating & 130 oO 120 SS 110 S SS 100 \ SS NJ 90 S IN 80 70 60 304] 6] 904] [120 hse 0 10 20 30 40 50 60 70 80 90 100 Maximum Allowable Case Temperature Average OnState Current Amperes Junction to Case ZNI916 Figure 3 Maximum Power Dissipation 105 3 . ot /|/ 2 ey 7 V 2 6 30 L Y B Y 6 / Y / _ Vl 2 30 by Yi E Y Ss 15 x oO = 0 0 10 20 30 40 50 60 70 80 90 100 Average On-State Current Amperes Figure 4 Transient Thermal Impedance 0.7 2S o on o ip 2 iw \ ho \ oO = \ x a Thermal Impedance C/Watts 0 .001 .01 0.1 1.0 10 100 Time in Seconds 04-24-07 Rev. 1