2N3906 / MMBT3906 / PZT3906 2N3906 MMBT3906 C E C B TO-92 B SOT-23 E Mark: 2A PZT3906 C E C B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 1997 Fairchild Semiconductor Corporation (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 5.0 IBL Base Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA ICEX Collector Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA V ON CHARACTERISTICS hFE DC Current Gain * VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 60 80 100 60 30 0.65 300 0.25 0.4 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance NF Noise Figure (except MMPQ3906) IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 100 kHz VEB = 0.5 V, IC = 0, f = 100 kHz IC = 100 A, VCE = 5.0 V, RS =1.0k, f=10 Hz to 15.7 kHz 250 MHz 4.5 pF 10.0 pF 4.0 dB SWITCHING CHARACTERISTICS (except MMPQ3906) td Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns ts Storage Time VCC = 3.0 V, IC = 10mA 225 ns tf Fall Time IB1 = IB2 = 1.0 mA 75 ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10) 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier (continued) Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic Max RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient Symbol PD 2N3906 625 5.0 83.3 *PZT3906 1,000 8.0 200 125 Characteristic mW mW/C C/W C/W Max **MMBT3906 350 2.8 357 Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die RJA Units Units MMPQ3906 1,000 8.0 mW mW/C C/W C/W C/W 125 240 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 250 Vce = 1V 200 - 40 C 50 0.1 0.2 0.5 1 2 5 10 20 50 100 I C - COLLECTOR CURRENT (mA) = 10 - 40 C 25 C 0.8 125 C 0.6 0.4 0.2 1 = 10 0.2 25 C 0.1 125 C 0.05 Base-Emitter Saturation Voltage vs Collector Current 0 0.3 0.15 25 C 1 Collector-Emitter Saturation Voltage vs Collector Current 0.25 125 C 150 100 VCESAT- COLLECTOR EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current 10 100 I C - COLLECTOR CURRENT (mA) P 66 200 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics - 40 C 0 1 10 100 I C - COLLECTOR CURRENT (mA) 200 Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 C 25 C 0.6 125 C 0.4 V CE = 1V 0.2 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) P 66 25 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 100 V 10 = 25V C obo CB CAPACITANCE (pF) I CBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs. Ambient Temperature 10 1 0.1 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( C) 8 6 4 C ibo 2 0 0.1 125 1 REVERSE BIAS VOLTAGE (V) Noise Figure vs Source Resistance Noise Figure vs Frequency 6 12 V CE = 5.0V f = 1.0 kHz NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) V CE = 5.0V 5 4 I C = 100 A, R S = 200 3 2 I C = 1.0 mA, R S = 200 1 I C = 100 A, R S = 2.0 k 0 0.1 1 10 f - FREQUENCY (kHz) 10 I C = 1.0 mA 8 6 I C = 100 A 4 2 0 0.1 100 Switching Times vs Collector Current 100 500 ts tf 10 tr I B1 = I B2 = Ic t on I B1 = 10 Ic 10 t off I = I = B1 B2 td 10 I C - COLLECTOR CURRENT (mA) 100 t on V BE(OFF)= 0.5V 10 1 1 t off 100 TIME (nS) 100 1 1 10 R S - SOURCE RESISTANCE ( k ) Turn On and Turn Off Times vs Collector Current 500 TIME (nS) 10 1 Ic 10 10 I C - COLLECTOR CURRENT (mA) 100 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (W) 1 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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