PZT3906L99Z - Fairchild Semiconductor Corporation

2N3906 / MMBT3906 / PZT3906

PNP General Purpose Amplifier

This device is designed for general purpose amplifier and switching

applications at collector currents of 10 µA to 100 mA. Sourced

from Process 66.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

2N3906

PZT3906

MMBT3906

Symbol Parameter Value Units

VCEO Co llector-Emitter Vol t age 40 V

VCBO Collector-Base Voltage 40 V

VEBO Emitter-Base Voltage 5.0 V

ICCollector Current - Continuous 200 mA

TJ, Tstg Operating and Stora ge Junction Tempe rature Ra nge -55 to +150 °C

CBETO-92

SOT-223

SOT-23

Mark: 2A

 1997 Fairchild Semiconductor Corporation

2N3906 / MMBT3906 / PZT3906

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

ON CHARACTERISTICS

SMALL SIGNAL CHARACTERISTICS

SWITCHING CHARACTERISTICS (except MMPQ3906)

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model

(

)

CEO Co llecto r-Emitter Breakdown Volt age * IC = 1.0 mA, IB = 0 40 V

(

)

CBO Co llector-Base Breakdow n Voltage IC = 10

A, IE = 0 40 V

(

)

EBO Emitter-Base Bre akdown Voltage IE = 10

A, IC = 0 5.0 V

IBL Base Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA

ICEX Collector Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA

hFE DC Current Gain * IC = 0.1 mA, VCE = 1.0 V

IC = 1.0 mA, VCE = 1.0 V

IC = 10 mA, VCE = 1.0 V

IC = 50 mA, VCE = 1.0 V

IC = 100 mA, VCE = 1.0 V

100

300

VCE

(

sat

)

Collector-Emitter Saturation Vol tage IC = 10 mA, IB = 1.0 mA

IC = 50 mA, IB = 5.0 mA 0.25

0.4 V

VBE

(

sat

)

Base-Em i tter Sa turation Voltage IC = 10 mA, IB = 1.0 mA

IC = 50 mA, IB = 5.0 mA 0.65 0.85

0.95 V

fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,

f = 100 MHz 250 MHz

Cobo Output Ca pacita nce VCB = 5.0 V, IE = 0,

f = 100 kHz 4.5 pF

Cibo Input Capacitance VEB = 0.5 V, IC = 0,

f = 100 kHz 10.0 pF

NF Noise F igure (except MMPQ3906) IC = 100

A, VCE = 5.0 V,

RS =1.0kΩ, f=10 Hz to 15.7 kHz 4.0 dB

tdDelay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns

trRise Time IC = 10 mA, IB1 = 1.0 mA 35 ns

tsStorage Time VCC = 3.0 V, IC = 10mA 225 ns

tfFa ll Time IB1 = IB2 = 1.0 mA 75 ns

PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0

Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4

Vtf=4 Xtf=6 Rb=10)

PNP General Purpose Amplifier

(continued)

2N3906 / MMBT3906 / PZT3906

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N3906 *PZT3906

PDTotal Device Dissipation

Derate above 25°C625

5.0 1,000

8.0 mW

mW/°C

RθJC Thermal Resistance, Junctio n to Case 83.3 °C/W

RθJA Thermal Re sistance, Junction to Ambient 200 125 °C/W

Symbol Characteristic Max Units

**MMBT3906 MMPQ3906

PDTotal Device Dissipation

Derate above 25°C350

2.8 1,000

8.0 mW

mW/°C

RθJA Thermal Resistance, Junction to Ambient

Effective 4 Die

Each Die

357 125

240

°C/W

PNP General Purpose Amplifier

(continued)

Typical Characteristics

Base Emitter ON Voltage vs

Collector Current

P66

0.1 1 10 25

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BASE EMITTER ON VOLTAGE (V)

BEON

V = 1V

25 °C

- 40 ºC

125 ºC

Typical Pulsed Current Gain

vs Collector Current

0.1 0.2 0.5 1 2 5 10 20 50 100

100

150

200

250

I - COLLECTOR CURRENT (mA)

h - TYPICAL PULSED CURRENT GAIN

125 °C

25 °C

- 40 °C

Vce = 1V

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Base-Emitter Saturation

Voltage vs Collector Current

P66

1 10 100 200

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BASE EMITTER VOLTAGE (V)

BESAT

β = 10

25 °C

- 40 ºC

125 ºC

Coll ector-Emitt er Satura tion

Voltage vs Collector Current

1 10 100 200

0.05

0.1

0.15

0.2

0.25

0.3

I - COLLECTOR CURRENT (mA)

- COLLECTOR EMITTER VOLTAGE (V)

CESAT

25 °C

- 40 ºC

125 ºC

β = 10

2N3906 / MMBT3906 / PZT3906

PNP General Purpose Amplifier

(continued)

Typical Characteristics (continued)

Collector-Cutoff C urrent

vs. Amb i en t Temperature

25 50 75 100 125

0.01

0.1

100

T - AM BIENT TEMPERATURE ( C)

I - COLLECTOR CURRENT (nA)

CBO

V = 25V

Common-Base Open Circuit

Input and Output Capacitance

vs R e vers e Bi as Voltag e

0.1 1 10

REVERSE BI AS VO LTAGE (V)

CAPACITANCE (pF)

Cobo

ibo

Noise Figure vs Frequency

0.1 1 10 100

f - FREQUENCY (kHz)

NF - NOISE FIGURE (dB)

I = 100 µA, R = 200Ω

V = 5.0V

I = 100 µA, R = 2.0 kΩ

I = 1.0 mA, R = 200Ω

kΩ

Noise Figure vs Source Resistance

0.1 1 10 100

R - SOURCE RESISTA NCE ( )

NF - NOISE FIGURE (dB)

I = 100 µA

V = 5.0V

f = 1.0 kHz

I = 1.0 mA

Switching Times

vs Collector Current

1 10 100

100

500

I - COLLECTOR CURRENT (mA)

TIME (nS)

I = I =

B2 Ic

Turn On and Turn Off Times

vs Collector Current

110100

100

500

I - COLLECTOR CURRENT (mA)

TIME (nS)

I = I =

off

B2 Ic

V = 0.5V

BE(OFF)

t I =

off

B1 Ic

2N3906 / MMBT3906 / PZT3906

PNP General Purpose Amplifier

(continued)

Typical Characteristics (continued)

Power Dissipation vs

Ambient Temperature

0 25 50 75 100 125 150

0.25

0.5

0.75

TEMPERATURE ( C)

P - PO WER DISSIPATION (W)

SOT-223

SOT-23

TO-92

TRADEMARKS

ACEx™

CoolFET™

CROSSVOLT™

E2CMOSTM

FACT™

FACT Quiet Series™

FAST®

FASTr™

GTO™

HiSeC™

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

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SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

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the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

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