BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
1
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●Rugged Triple-Diffused Planar Construction
●15 A Continuous Collector Current
●1000 Volt Blocking Capability
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.
RATING SYMBOL VALUE UNIT
Collector-emitter voltage (VBE = 0 V) BUV48
BUV48A VCES
850
1000 V
Collector-emitter voltage (RBE = 10 Ω)BUV48
BUV48A VCER
850
1000 V
Collector-emitter voltage (IB = 0) BUV48
BUV48A VCEO
400
450 V
Continuous collector current IC15 A
Peak collector current (see Note 1) ICM 30 A
Continuous base current IB4A
Peak base current IBM 20 A
Non repetitive accidental peak surge current ICSM 55 A
Continuous device dissipation at (or below) 25°C case temperature Ptot 125 W
Operating junction temperature range Tj-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
B
C
E
1
2
3
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VCEO(sus)
Collector-emitter
sustaining voltage IC = 200 mA L = 25 mH (see Note 2) BUV48
BUV48A
400
450 V
ICES
Collector-emitter
cut-off current
VCE = 850 V
VCE = 1000 V
VCE = 850 V
VCE = 1000 V
VBE =0
VBE =0
VBE =0
VBE =0
TC = 125°C
TC = 125°C
BUV48
BUV48A
BUV48
BUV48A
0.2
0.2
2.0
2.0
mA
ICER
Collector-emitter
cut-off current
VCE = 850 V
VCE = 1000 V
VCE = 850 V
VCE = 1000 V
RBE =10 Ω
RBE =10 Ω
RBE =10 Ω
RBE =10 Ω
TC = 125°C
TC = 125°C
BUV48
BUV48A
BUV48
BUV48A
0.5
0.5
4.0
4.0
mA
IEBO
Emitter cut-off
current VEB = 5 V IC=0 1 mA
VEBO
Emitter-base
breakdown voltage IE = 50 mA IC=0 7 30 V
VCE(sat)
Collector-emitter
saturation voltage
IB = 2 A
IB = 3 A
IB = 1.6 A
IB = 2.4 A
IC= 10 A
IC= 15 A
IC= 8A
IC= 12 A
(see Notes 3 and 4)
BUV48
BUV48
BUV48A
BUV48A
1.5
5.0
1.5
5.0
V
VBE(sat)
Base-emitter
saturation voltage
IB = 2 A
IB = 1.6 A
IC= 10 A
IC= 8A (see Notes 3 and 4) BUV48
BUV48A
1.6
1.6 V
ft
Current gain
bandwidth product VCE = 10 V IC= 0.5A f = 1 MHz 10 MHz
Cob Output capacitance VCB = 20 V IC= 0 f = 1 MHz 150 pF
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
ton Tu r n on t im e IC = 10 A
IB(on) = 2 A
VCC = 150 V
IB(off) = -2 A
BUV48
(see Figures 1 and 2)
1.0 µs
tsStorage time 3.0 µs
tfFall time 0.8 µs
ton Tu r n on t im e IC = 8 A
IB(on) = 1.6 A
VCC = 150 V
IB(off) = -1.6 A
BUV48A
(see Figures 1 and 2)
1.0 µs
tsStorage time 3.0 µs
tfFall time 0.8 µs
inductive-load-switching characteristics at 100°C case temperature
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
tsv Voltage storage time IC = 10 A
VBE(off) = -5 V
IB(on) = 2 A
(see Figures 3 and 4) BUV48 4.0 µs
tfi Current fall time 0.4 µs
tsv Voltage storage time IC = 8 A
VBE(off) = -5 V
IB(on) = 1.6 A
(see Figures 3 and 4) BUV48A 4.0 µs
tfi Current fall time 0.4 µs
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
3
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
PARAMETER MEASUREMENT INFORMATION
Figure 1. Resistive-Load Switching Test Circuit
Figure 2. Resistive-Load Switching Waveforms
tp
F
µ
100
V1
680 F
µ
V1
Vcc = 250 V
+25 V
BD135
47
Ω
100
Ω
120
Ω
15
Ω
82
Ω
100
Ω
BD136
680 F
µ
TUT
T
tp = 20 µs
Duty cycle = 1%
V1 = 15 V, Source Impedance = 50 Ω
VCC
0%
C
B
90%
10%
A10%
90%
10%
90%
E
F
D
IB
IC
IB(on)
IB(off)
0%
dIB
dt ≥ 2 A/µs
A - B = td
B - C = tr
E - F = tf
D - E = ts
A - C = ton
D - F = toff
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
PARAMETER MEASUREMENT INFORMATION
Figure 3. Inductive-Load Switching Test Circuit
Figure 4. Inductive-Load Switching Waveforms
RB (on)
VBE(off)
Vclamp = 400 V
vcc
µ
H
180
33
Ω
+5V
D45H11
BY205-400
BY205-400
2N2222
BY205-400 5X BY205-400
BY205-400
1 k
Ω
68
Ω
1 k
Ω
47
Ω
2N2904
D44H11
100
Ω
270
Ω
V Gen
+5V
1 k
Ω
0.02
µ
FTUT
1 pF
33
Ω
Adjust pw to obtain IC
For IC < 6 A VCC = 50 V
For IC ≥ 6 A VCC = 100 V
Base Current
A (90%)
IB(on)
IB
Collector Voltage
Collector Current
D (90%)
E (10%)
F (2%)
C
B
90%
10%
VCE
IC(on)
A - B = tsv
B - C = trv
D - E = tfi
E - F = tti
B - E = txo
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.
B. Resistors must be noninductive types.
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
5
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 5. Figure 6.
Figure 7. Figure 8.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
200·1 1·0 10
hFE - Typical DC Current Gain
1·0
10
100 TCP765AA
VCE = 5 V TC = 125°C
TC = 25°C
TC = -65°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IB - Base Current - A
0·1 1·0 10
VCE(sat) - Collector-Emitter Saturation Voltage - V
0
1·0
2·0
3·0
4·0
5·0 TCP765AB
IC = 5 A
IC = 10 A
IC = 15 A
TC = 25°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IB - Base Current - A
0·1 1·0 10
VCE(sat) - Collector-Emitter Saturation Voltage - V
0
1·0
2·0
3·0
4·0
5·0 TCP765AI
TC = 100°C
IC = 5 A
IC = 10 A
IC = 15 A
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IB - Base Current - A
0123456
VBE(sat) - Base-Emitter Saturation Voltage - V
0·8
0·9
1·0
1·1
1·2
1·3
1·4
1·5
1·6 TCP765AC
IC = 5 A
IC = 10 A
IC = 15 A
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
6
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 9.
MAXIMUM SAFE OPERATING REGIONS
Figure 10.
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
TC - Case Temperature - °C
-80-60-40-200 20406080100120140
ICES - Collector Cut-off Current - µA
4·0
0·01
0·1
1·0
TCP765AD
BUV48A
VCE = 1000 V
BUV48
VCE = 850 V
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0·01
0.1
1·0
10
100 SAP765AA
tp = 10 µs
tp = 50 µs
tp = 100 µs
tp = 500 µs
tp = 1 ms
tp = 2 ms
DC Operation
BUV48
BUV48A
