2N3368 2N3369 2N3370 iconix n-channel JFETs designed for... = Small-Signal Low Power Applications * ABSOLUTE MAXIMUM RATINGS (25C) Gate-Drain or Gate-Source Voltage (Note 1) . . . .-40V Gate Current . . 2... ww eee 10mA Total Device Dissipation at (or below) 25C Free-Air Temperature (Note 2) . 300 mw Storage Temperature Range ... . -65 to +175C Maximum Operating Temperature... .. . 150C *ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) Siliconix Performance Curves NP See Section 5 TO-18 See Section 7 BD G Gc s D s NOTES: 2. Derate linearly to 150C free-air temperature at rate of 2.7 mw/c, 2N3368 2N3369 2N3370 ; Characteristic Unit Test Conditions Min Max Min Max Min Max : ' Gate Ri c = = oe La 30 V, Vps =0 _ ate Reverse Current =- : = 2} | oss 15 15 15] wa | oS os 100C Gate-Source 3) 5 | 8YGSS Breakdown Voltage 40 -40 -40 IG=-1HA, Vos =0 a Gate-Source Cutoff = 4 t VGS(off) Voltage -11.5 -6.5 -3.2 Vps = 20V,Ip =1HA Phe Drain Cutoff C 5 5 8 nA Vv 20V,V () rain Cuto urrent = ' = Dioff) (-12.0) -7.0) -3.5){ wy | 8 ss 6 ipss Saturation Drain Current 2.0 12.0 0.5 2.5 0.1 0.6 mA | Vos = 30 V (Note 3), Veg =0 7| | of. Gommon-Source Forward 1990 | 4000] 600} 2500} 300} 2500 Vog = 30 V (Note 3), Vog=0 | f= 1kHz Bumbo D Common-Source Output 8 Y | Soss Conductance 80 30 15 aN Vps = 30 V, Vgg =0 Common-Source Output 8 " Coss Capacitance 3 3 3 f= 1 MHz lc eF . Common-Source Input = = 10 Ciss Capacitance 20 20 20 Vos = 8 V. Vas =0 *JEDEC registered data. NP 1. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged. 3. To minimize heating on high pgs units, this parameter is measured during a 2 ms interval 100 ms after power is applied. (Not a JEDEC condition.) 3-4 1979 Siticonix incorporated