Transistors with built-in Resistor UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.90.1 2.50.1 1.5 1.0 0.4 (R1) 10k 22k 47k 10k 10k 4.7k 22k 0.51k 1k 47k 47k 47k 4.7k 2.2k 4.7k (R2) 10k 22k 47k 47k -- -- -- 5.1k 10k -- 10k 22k 10k 10k 4.7k Absolute Maximum Ratings 3 2 2.5 1 2.5 1.250.05 0.450.05 Resistance by Part Number UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 UN1119 UN1110 UN111D UN111E UN111F UN111H UN111L 4.10.2 0.85 0.550.1 4.50.1 3.50.1 2.40.2 2.00.2 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 1.5 R0.9 R0.9 R 0. 7 1.00.1 Features 1:Base 2:Collector 3:Emitter M Type Mold Package Internal Connection R1 C B R2 E (Ta=25C) Parameter Symbol Ratings Unit Collector to base voltage VCBO -50 V Collector to emitter voltage VCEO -50 V Collector current IC -100 mA Total power dissipation PT 400 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C 1 Transistors with built-in Resistor Electrical Characteristics UN1111/1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L (Ta=25C) Parameter Symbol Collector cutoff current Conditions min typ ICBO VCB = -50V, IE = 0 - 0.1 A VCE = -50V, IB = 0 - 0.5 A UN1111 - 0.5 UN1112/1114/111E/111D - 0.2 - 0.1 UN1115/1116/1117/1110 IEBO VEB = -6V, IC = 0 - 0.01 UN111F/111H -1.0 UN1119 -1.5 UN1118/111L mA -2.0 Collector to base voltage VCBO IC = -10A, IE = 0 50 V Collector to emitter voltage VCEO IC = -2mA, IB = 0 50 V UN1111 Forward current transfer ratio 35 UN1112/111E 60 UN1113/1114 80 UN1115*/1116*/1117*/1110* hFE VCE = -10V, IC = -5mA UN111F/111D/1119/111H VCE(sat) IC = -10mA, IB = - 0.3mA Output voltage high level VOH VCC = -5V, VB = - 0.5V, RL = 1k Output voltage low level UN1113 UN111D VOL UN111E Transition frequency - 0.25 -4.9 - 0.2 VCC = -5V, VB = -3.5V, RL = 1k - 0.2 VCC = -5V, VB = -10V, RL = 1k - 0.2 VCC = -5V, VB = -6V, RL = 1k fT V V VCC = -5V, VB = -2.5V, RL = 1k V - 0.2 VCB = -10V, IE = 2mA, f = 200MHz 80 UN1111/1114/1115 10 UN1112/1117 22 UN1113/1110/111D/111E MHz 47 UN1116/111F/111L (-30%) R1 4.7 UN1118 0.51 UN1119 1 UN111H Resistance ratio 460 20 Collector to emitter saturation voltage Input resistance 160 30 UN1118/111L (+30%) 2.2 UN1111/1112/1113/111L 0.8 1.0 UN1114 0.17 0.21 0.25 UN1118/1119 0.08 0.1 0.12 UN111D R1/R2 1.2 4.7 UN111E 2.14 UN111F 0.47 UN111H 0.17 * hFE rank classification (UN1115/1116/1117/1110) 2 Unit ICEO UN1113 Emitter cutoff current max Rank Q R S hFE 160 to 260 210 to 340 290 to 460 0.22 0.27 k UN1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Common characteristics chart PT -- Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Characteristics charts of UN1111 IC -- VCE VCE(sat) -- IC IB=-1.0mA Collector current IC (mA) -140 Ta=25C -0.9mA -120 -0.8mA -0.7mA -100 -0.6mA -0.5mA -80 -0.4mA -60 -0.3mA -40 -0.2mA -20 -0.1mA 0 0 -2 -4 -6 -8 -10 -12 Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=10 -30 -10 -3 -1 -0.3 -25C -0.03 -0.01 -0.1 -0.3 -3 -10 -30 25C 120 -25C 80 40 0 -1 -100 -3 4 3 2 -30 -100 -300 -1000 VIN -- IO -100 VO=-5V Ta=25C -3000 -30 -1000 -10 Input voltage VIN (V) f=1MHz IE=0 Ta=25C -10 Collector current IC (mA) IO -- VIN -10000 Output current IO (A) Collector output capacitance Cob (pF) -1 Ta=75C VCE= -10V Collector current IC (mA) Cob -- VCB 5 Ta=75C 25C -0.1 Collector to emitter voltage VCE (V) 6 hFE -- IC 160 Forward current transfer ratio hFE -160 -300 -100 -30 -10 VO= -0.2V Ta=25C -3 -1 -0.3 -0.1 1 -0.03 -3 0 -0.1 -0.3 -1 -3 -10 Collector to base voltage -30 -100 VCB (V) -1 -0.4 -0.6 -0.8 -1.0 -1.2 Input voltage VIN (V) -1.4 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Output current IO (mA) 3 UN1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Characteristics charts of UN1112 IC -- VCE VCE(sat) -- IC -100 Collector current IC (mA) -140 -120 -100 -0.5mA -80 -0.4mA -60 -0.3mA -40 -0.2mA -20 -0.1mA 0 0 -2 -4 -6 -8 -10 -12 IC/IB=10 -30 -10 -3 -1 -0.3 -25C -0.03 -0.01 -0.1 -0.3 -1 -10 -30 300 Ta=75C 200 25C -25C 100 0 -1 -100 -3 4 3 2 -30 -100 -300 -1000 VIN -- IO -100 VO=-5V Ta=25C -3000 -30 -1000 -10 Input voltage VIN (V) f=1MHz IE=0 Ta=25C -10 Collector current IC (mA) IO -- VIN -10000 Output current IO (A) Collector output capacitance Cob (pF) -3 VCE= -10V Collector current IC (mA) Cob -- VCB 5 Ta=75C 25C -0.1 Collector to emitter voltage VCE (V) 6 hFE -- IC 400 Forward current transfer ratio hFE Ta=25C IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA Collector to emitter saturation voltage VCE(sat) (V) -160 -300 -100 -30 -10 VO=-0.2V Ta=25C -3 -1 -0.3 -0.1 1 -0.03 -3 0 -0.1 -0.3 -1 -3 -10 Collector to base voltage -30 -1 -0.4 -100 -0.6 -0.8 -1.0 -1.2 -0.01 -0.1 -0.3 -1.4 -1 -3 -10 -30 -100 Output current IO (mA) Input voltage VIN (V) VCB (V) Characteristics charts of UN1113 IC -- VCE VCE(sat) -- IC -100 Collector current IC (mA) Ta=25C -0.9mA -0.8mA -0.7mA -0.6mA -120 -0.5mA -100 -80 -0.4mA -60 -0.3mA -40 -0.2mA -20 -0.1mA 0 0 -2 -4 -6 -8 -10 Collector to emitter voltage VCE (V) 4 -12 hFE -- IC 400 IC/IB=10 -30 -10 -3 -1 -0.3 Ta=75C 25C -0.1 -25C -0.03 -0.01 -0.1 -0.3 -1 -3 -10 -30 Collector current IC (mA) -100 VCE= -10V Forward current transfer ratio hFE IB=-1.0mA -140 Collector to emitter saturation voltage VCE(sat) (V) -160 Ta=75C 300 25C 200 -25C 100 0 -1 -3 -10 -30 -100 -300 -1000 Collector current IC (mA) UN1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Cob -- VCB IO -- VIN 4 3 2 -100 VO=-5V Ta=25C -3000 -30 -1000 -10 Input voltage VIN (V) f=1MHz IE=0 Ta=25C 5 VIN -- IO -10000 Output current IO (A) Collector output capacitance Cob (pF) 6 -300 -100 -30 -10 VO= -0.2V Ta=25C -3 -1 -0.3 -0.1 1 -3 0 -0.1 -0.3 -1 -3 -10 Collector to base voltage -30 -1 -0.4 -100 VCB (V) -0.03 -0.6 -0.8 -1.0 -1.2 -0.01 -0.1 -0.3 -1.4 Input voltage VIN (V) -1 -3 -10 -30 -100 Output current IO (mA) Characteristics charts of UN1114 IC -- VCE VCE(sat) -- IC Ta=25C Collector current IC (mA) -140 IB=-1.0mA -120 -0.9mA -0.8mA -0.7mA -0.6mA -100 -0.5mA -80 -0.4mA -60 -0.3mA -0.2mA -40 -0.1mA -20 Collector to emitter saturation voltage VCE(sat) (V) -100 0 0 -2 -4 -6 -8 -10 IC/IB=10 -30 -10 -3 -1 -0.3 Ta=75C 25C -0.1 -0.03 Collector to emitter voltage VCE (V) -1 -3 -10 -10000 -30 25C -25C 100 0 -1 -100 -3 4 3 2 -10 -30 -100 -300 -1000 Collector current IC (mA) VIN -- IO VO=-5V Ta=25C -1000 -3000 -300 -1000 -100 Input voltage VIN (V) Output current IO (A) Collector output capacitance Cob (pF) Ta=75C 200 IO -- VIN f=1MHz IE=0 Ta=25C 5 300 Collector current IC (mA) Cob -- VCB 6 VCE= -10V -25C -0.01 -0.1 -0.3 -12 hFE -- IC 400 Forward current transfer ratio hFE -160 -300 -100 -30 -10 VO= -0.2V Ta=25C -30 -10 -3 -1 1 -0.3 -3 0 -0.1 -0.3 -1 -3 -10 Collector to base voltage -30 -100 VCB (V) -1 -0.4 -0.6 -0.8 -1.0 -1.2 Input voltage VIN (V) -1.4 -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 Output current IO (mA) 5 UN1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Characteristics charts of UN1115 IC -- VCE VCE(sat) -- IC -100 IB=-1.0mA Collector current IC (mA) -140 -120 -0.9mA -0.8mA -0.7mA -0.6mA -100 -0.5mA -0.4mA -80 -0.3mA -60 -0.2mA -40 -0.1mA -20 0 0 -2 -4 -6 -8 -10 -12 IC/IB=10 -30 -10 -3 -1 Ta=75C -0.3 25C -0.1 -0.03 -25C -0.01 -0.1 -0.3 -1 Cob -- VCB -30 300 Ta=75C 200 25C -25C 100 0 -1 -100 -3 3 2 -30 -100 -300 -1000 VIN -- IO -100 VO=-5V Ta=25C -3000 -30 -1000 -10 Input voltage VIN (V) 4 -10 Collector current IC (mA) IO -- VIN Output current IO (A) Collector output capacitance Cob (pF) -10 -10000 f=1MHz IE=0 Ta=25C 5 -3 VCE= -10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE -- IC 400 Forward current transfer ratio hFE Ta=25C Collector to emitter saturation voltage VCE(sat) (V) -160 -300 -100 -30 -10 VO= -0.2V Ta=25C -3 -1 -0.3 -0.1 1 -3 0 -0.1 -0.3 -1 -3 -10 Collector to base voltage -30 -1 -0.4 -100 VCB (V) -0.03 -0.6 -0.8 -1.0 -1.2 -0.01 -0.1 -0.3 -1.4 Input voltage VIN (V) -1 -3 -10 -30 -100 Output current IO (mA) Characteristics charts of UN1116 IC -- VCE VCE(sat) -- IC IB=-1.0mA Collector current IC (mA) -140 Ta=25C -0.9mA -0.8mA -120 -0.7mA -0.6mA -100 -0.5mA -80 -0.4mA -60 -0.3mA -40 -0.2mA -20 -0.1mA 0 0 -2 -4 -6 -8 -10 Collector to emitter voltage VCE (V) 6 -12 Collector to emitter saturation voltage VCE(sat) (V) -100 hFE -- IC 400 IC/IB=10 -30 -10 -3 -1 -0.3 Ta=75C 25C -0.1 -0.03 -25C -0.01 -0.1 -0.3 -1 -3 -10 -30 Collector current IC (mA) VCE= -10V Forward current transfer ratio hFE -160 -100 300 Ta=75C 200 25C -25C 100 0 -1 -3 -10 -30 -100 -300 -1000 Collector current IC (mA) UN1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Cob -- VCB IO -- VIN -10000 5 4 3 2 VIN -- IO -100 VO=-5V Ta=25C -3000 -30 -1000 -10 Input voltage VIN (V) f=1MHz IE=0 Ta=25C Output current IO (A) Collector output capacitance Cob (pF) 6 -300 -100 -30 -10 VO=-0.2V Ta=25C -3 -1 -0.3 -0.1 1 -3 0 -0.1 -0.3 -1 -3 -10 -30 -1 -0.4 -100 Collector to base voltage VCB (V) -0.03 -0.6 -0.8 -1.0 -1.2 -0.01 -0.1 -0.3 -1.4 Input voltage VIN (V) -1 -3 -10 -30 -100 Output current IO (mA) Characteristics charts of UN1117 IC -- VCE VCE(sat) -- IC -100 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA Collector current IC (mA) -100 -80 -60 -0.3mA -40 -0.2mA -20 -0.1mA 0 0 -2 -4 -6 -8 -10 -12 IC/IB=10 -30 -10 -3 Ta=75C -1 -0.3 25C -0.1 -25C -0.03 -0.01 -0.1 -0.3 Collector to emitter voltage VCE (V) -3 -10 200 Ta=75C 25C 100 -25C 0 -1 -100 -3 4 3 2 -10 -30 -100 -300 -1000 Collector current IC (mA) VIN -- IO -100 VO=-5V Ta=25C -3000 -30 -1000 -10 Input voltage VIN (V) f=1MHz IE=0 Ta=25C 5 -30 300 IO -- VIN -10000 Output current IO (A) Collector output capacitance Cob (pF) -1 VCE= -10V Collector current IC (mA) Cob -- VCB 6 hFE -- IC 400 Forward current transfer ratio hFE Ta=25C Collector to emitter saturation voltage VCE(sat) (V) -120 -300 -100 -30 -10 VO=-0.2V Ta=25C -3 -1 -0.3 -0.1 1 -3 0 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) -1 -0.4 -0.03 -0.6 -0.8 -1.0 -1.2 Input voltage VIN (V) -1.4 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Output current IO (mA) 7 UN1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Characteristics charts of UN1118 IC -- VCE VCE(sat) -- IC -100 Collector current IC (mA) -200 IB=-1.0mA -0.9mA -160 -0.8mA -0.7mA -120 -0.6mA -0.5mA -80 -0.4mA -0.3mA -40 -0.2mA -0.1mA 0 0 -2 -4 -6 -8 -10 -12 IC/IB=10 -30 -10 -3 -1 Ta=75C -0.3 25C -0.1 -0.03 -25C -0.01 -0.1 -0.3 -1 Cob -- VCB -30 120 Ta=75C 80 25C -25C 40 0 -1 -100 -3 3 2 -30 -100 -300 -1000 VIN -- IO -100 VO=-5V Ta=25C -3000 -30 -1000 -10 Input voltage VIN (V) 4 -10 Collector current IC (mA) IO -- VIN Output current IO (A) Collector output capacitance Cob (pF) -10 -10000 f=1MHz IE=0 Ta=25C 5 -3 VCE= -10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE -- IC 160 Forward current transfer ratio hFE Ta=25C Collector to emitter saturation voltage VCE(sat) (V) -240 -300 -100 -30 -10 VO= -0.2V Ta=25C -3 -1 -0.3 -0.1 1 -3 0 -0.1 -0.3 -1 -3 -10 Collector to base voltage -30 -1 -0.4 -100 VCB (V) -0.03 -0.6 -0.8 -1.0 -1.2 -0.01 -0.1 -0.3 -1.4 Input voltage VIN (V) -1 -3 -10 -30 -100 Output current IO (mA) Characteristics charts of UN1119 IC -- VCE VCE(sat) -- IC -100 Collector current IC (mA) -200 IB=-1.0mA -0.9mA -0.8mA -0.7mA -160 -120 -80 -0.6mA -0.5mA -0.4mA -0.3mA -40 -0.2mA -0.1mA 0 0 -2 -4 -6 -8 -10 Collector to emitter voltage VCE (V) 8 -12 hFE -- IC -30 -10 -3 -1 Ta=75C -0.3 25C -0.1 -0.03 160 IC/IB=10 -25C -0.01 -0.1 -0.3 -1 -3 -10 -30 Collector current IC (mA) -100 VCE= -10V Forward current transfer ratio hFE Ta=25C Collector to emitter saturation voltage VCE(sat) (V) -240 120 Ta=75C 80 25C -25C 40 0 -1 -3 -10 -30 -100 -300 -1000 Collector current IC (mA) UN1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Cob -- VCB 5 4 3 2 VIN -- IO -100 VO=-5V Ta=25C -3000 -30 -1000 -10 Input voltage VIN (V) f=1MHz IE=0 Ta=25C Output current IO (A) Collector output capacitance Cob (pF) IO -- VIN -10000 6 -300 -100 -30 -10 VO=-0.2V Ta=25C -3 -1 -0.3 -0.1 1 -3 0 -0.1 -0.3 -1 -3 -10 -30 -1 -0.4 -100 -0.03 -0.6 -0.8 -1.0 -1.2 -0.01 -0.1 -0.3 -1.4 Input voltage VIN (V) Collector to base voltage VCB (V) -1 -3 -10 -30 -100 Output current IO (mA) Characteristics charts of UN1110 IC -- VCE VCE(sat) -- IC -100 -60 -0.2mA -40 -0.1mA -20 0 0 -2 -4 -6 -8 -10 IC/IB=10 -30 -10 -3 -1 Ta=75C -0.3 25C -0.1 -0.03 -25C -0.01 -0.1 -0.3 -12 Collector to emitter voltage VCE (V) -3 -10 Ta=75C 200 25C -25C 100 0 -1 -100 -3 4 3 2 -10 -30 -100 -300 -1000 Collector current IC (mA) VIN -- IO -100 VO=-5V Ta=25C -3000 -30 -1000 -10 Input voltage VIN (V) f=1MHz IE=0 Ta=25C 5 -30 300 IO -- VIN -10000 Output current IO (A) Collector output capacitance Cob (pF) -1 VCE= -10V Collector current IC (mA) Cob -- VCB 6 hFE -- IC 400 Forward current transfer ratio hFE Ta=25C IB=-1.0mA -0.9mA -100 -0.8mA -0.7mA -0.6mA -0.5mA -80 -0.4mA -0.3mA Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) -120 -300 -100 -30 -10 VO=-0.2V Ta=25C -3 -1 -0.3 -0.1 1 -3 0 -0.1 -0.3 -1 -3 -10 Collector to base voltage -30 -100 VCB (V) -1 -0.4 -0.03 -0.6 -0.8 -1.0 -1.2 Input voltage VIN (V) -1.4 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Output current IO (mA) 9 UN1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Characteristics charts of UN111D IC -- VCE VCE(sat) -- IC -100 Ta=25C Collector current IC (mA) -50 -40 -0.3mA -30 -0.2mA -0.7mA -0.6mA -0.5mA -0.4mA -20 -0.1mA -10 0 -2 -4 -6 -8 -10 IC/IB=10 -30 -10 -3 -1 Ta=75C -0.3 25C -0.1 -0.03 -25C -0.01 -0.1 -0.3 0 -12 Collector to emitter voltage VCE (V) -1 -30 25C -25C 80 40 0 -1 -100 Ta=75C 120 -3 3 2 -30 -100 -300 -1000 VIN -- IO -100 VO=-5V Ta=25C -3000 -30 -1000 -10 Input voltage VIN (V) 4 -10 Collector current IC (mA) IO -- VIN Output current IO (A) Collector output capacitance Cob (pF) -10 -10000 f=1MHz IE=0 Ta=25C 5 -3 VCE= -10V Collector current IC (mA) Cob -- VCB 6 hFE -- IC 160 Forward current transfer ratio hFE IB=-1.0mA -0.9mA -0.8mA Collector to emitter saturation voltage VCE(sat) (V) -60 -300 -100 -30 -10 VO= -0.2V Ta=25C -3 -1 -0.3 -0.1 1 -3 0 -0.1 -0.3 -1 -3 -10 -30 -1 -1.5 -100 Collector to base voltage VCB (V) -0.03 -2.0 -2.5 -3.0 -3.5 -4.0 -0.01 -0.1 -0.3 Input voltage VIN (V) -1 -3 -10 -30 -100 Output current IO (mA) Characteristics charts of UN111E IC -- VCE VCE(sat) -- IC -100 Ta=25C Collector current IC (mA) -50 -40 -0.3mA -30 -0.6mA -0.5mA -0.4mA -20 -0.2mA -0.1mA -10 0 0 -2 -4 -6 -8 -10 Collector to emitter voltage VCE (V) 10 -12 hFE -- IC -30 -10 -3 -1 Ta=75C -0.3 25C -0.1 -0.03 400 IC/IB=10 -25C -0.01 -0.1 -0.3 -1 -3 -10 -30 Collector current IC (mA) VCE=-10V Forward current transfer ratio hFE IB=-1.0mA -0.9mA -0.8mA -0.7mA Collector to emitter saturation voltage VCE(sat) (V) -60 -100 300 200 Ta=75C 100 0 -1 25C -25C -3 -10 -30 -100 -300 -1000 Collector current IC (mA) UN1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Cob -- VCB 5 4 3 2 VIN -- IO -100 VO=-5V Ta=25C -3000 -30 -1000 -10 Input voltage VIN (V) f=1MHz IE=0 Ta=25C Output current IO (A) Collector output capacitance Cob (pF) IO -- VIN -10000 6 -300 -100 -30 -10 VO=-0.2V Ta=25C -3 -1 -0.3 -0.1 1 -3 0 -0.1 -0.3 -1 -3 -10 Collector to base voltage -30 -1 -1.5 -100 -0.03 -2.0 -2.5 -3.0 -3.5 -4.0 -0.01 -0.1 -0.3 Input voltage VIN (V) VCB (V) -1 -3 -10 -30 -100 Output current IO (mA) Characteristics charts of UN111F IC -- VCE VCE(sat) -- IC Ta=25C IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA Collector current IC (mA) -200 -160 -120 -0.5mA -80 -0.4mA -0.3mA -40 -0.2mA -0.1mA 0 0 -2 -4 -6 -8 -10 -12 Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=10 -30 -10 -3 -1 Ta=75C -0.3 25C -0.1 -0.03 -25C -0.01 -0.1 -0.3 Collector to emitter voltage VCE (V) -10 -10000 -30 Ta=75C 25C 80 -25C 40 0 -1 -100 -3 4 3 2 -10 -30 -100 -300 -1000 Collector current IC (mA) VIN -- IO -100 VO=-5V Ta=25C -3000 -30 -1000 -10 Input voltage VIN (V) Output current IO (A) Collector output capacitance Cob (pF) -3 120 IO -- VIN f=1MHz IE=0 Ta=25C 5 -1 VCE= -10V Collector current IC (mA) Cob -- VCB 6 hFE -- IC 160 Forward current transfer ratio hFE -240 -300 -100 -30 -10 VO= -0.2V Ta=25C -3 -1 -0.3 -0.1 1 -0.03 -3 0 -0.1 -0.3 -1 -3 -10 Collector to base voltage -30 -100 VCB (V) -1 -0.4 -0.6 -0.8 -1.0 -1.2 Input voltage VIN (V) -1.4 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Output current IO (mA) 11 UN1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Characteristics charts of UN111H IC -- VCE VCE(sat) -- IC -120 -80 IB=-0.5mA -0.4mA -60 -0.3mA -40 -0.2mA -20 -0.1mA 0 0 -2 -4 -6 -8 -10 IC/IB=10 -10 -1 Ta=75C 25C -0.1 -25C -0.01 -1 -12 Collector to emitter voltage VCE (V) -3 -30 200 160 Ta=75C 120 25C 80 -25C 40 0 -0.1 -0.3 -100 -300 -1000 -1 -3 -10 -30 -100 Collector current IC (mA) VIN -- IO -100 f=1MHz IE=0 Ta=25C 4 3 2 VO=-0.2V Ta=25C -10 Input voltage VIN (V) 5 -10 VCE=-10V Collector current IC (mA) Cob -- VCB 6 240 Forward current transfer ratio hFE Collector current IC (mA) -100 Collector to emitter saturation voltage VCE(sat) (V) Ta=25C Collector output capacitance Cob (pF) hFE -- IC -100 -1 -0.1 1 0 -1 -3 -10 -30 Collector to base voltage -0.01 -0.1 -0.3 -100 -1 -3 -10 -30 -100 Output current IO (mA) VCB (V) Characteristics charts of UN111L IC -- VCE VCE(sat) -- IC -100 Collector current IC (mA) -200 -160 IB=-1.0mA -120 -0.8mA -0.6mA -80 -0.4mA -40 -0.2mA 0 0 -2 -4 -6 -8 -10 Collector to emitter voltage VCE (V) 12 -12 hFE -- IC -30 -10 -3 -1 Ta=75C 25C -0.3 -25C -0.1 -0.03 -0.01 -1 240 IC/IB=10 -3 -10 -30 -100 -300 -1000 Collector current IC (mA) VCE= -10V Forward current transfer ratio hFE Ta=25C Collector to emitter saturation voltage VCE(sat) (V) -240 200 160 120 Ta=75C 80 25C -25C 40 0 -1 -3 -10 -30 -100 -300 -1000 Collector current IC (mA) UN1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Cob -- VCB VIN -- IO -100 f=1MHz IE=0 Ta=25C 5 Input voltage VIN (V) Collector output capacitance Cob (pF) 6 4 3 2 VO= -0.2V Ta=25C -10 -1 -0.1 1 0 -1 -3 -10 Collector to base voltage -30 -100 VCB (V) -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Output current IO (mA) 13