2
Transistors with built-in Resistor
■Electrical Characteristics (Ta=25˚C)
Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = –50V, IE = 0 – 0.1 µA
ICEO VCE = –50V, IB = 0 – 0.5 µA
UN1111 – 0.5
UN1112/1114/111E/111D – 0.2
UN1113 – 0.1
UN1115/1116/1117/1110 IEBO VEB = –6V, IC = 0 – 0.01 mA
UN111F/111H –1.0
UN1119 –1.5
UN1118/111L –2.0
Collector to base voltage VCBO IC = –10µA, IE = 0 50 V
Collector to emitter voltage VCEO IC = –2mA, IB = 0 50 V
UN1111 35
UN1112/111E 60
UN1113/1114 hFE VCE = –10V, IC = –5mA 80
UN1115*/1116*/1117*/1110*
160 460
UN111F/111D/1119/111H 30
UN1118/111L 20
Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = – 0.3mA – 0.25 V
Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ–4.9 V
Output voltage low level VCC = –5V, VB = –2.5V, RL = 1kΩ– 0.2
UN1113 VOL VCC = –5V, VB = –3.5V, RL = 1kΩ– 0.2 V
UN111D VCC = –5V, VB = –10V, RL = 1kΩ– 0.2
UN111E VCC = –5V, VB = –6V, RL = 1kΩ– 0.2
Transition frequency fTVCB = –10V, IE = 2mA, f = 200MHz 80 MHz
UN1111/1114/1115 10
UN1112/1117 22
UN1113/1110/111D/111E 47
UN1116/111F/111L R1(–30%) 4.7 (+30%) kΩ
UN1118 0.51
UN1119 1
UN111H 2.2
UN1111/1112/1113/111L 0.8 1.0 1.2
UN1114 0.17 0.21 0.25
UN1118/1119 0.08 0.1 0.12
UN111D R1/R24.7
UN111E 2.14
UN111F 0.47
UN111H 0.17 0.22 0.27
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
Resis-
tance
ratio
UN1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
* hFE rank classification (UN1115/1116/1117/1110)
Rank Q R S
hFE 160 to 260 210 to 340 290 to 460