FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. 2.5 A, 30 V. RDS(ON) = 0.095 @ VGS = 10 V RDS(ON) = 0.145 @ VGS = 4.5 V These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems. SuperSOTTM-6 SOT-23 SuperSOTTM-8 Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). SOT-223 SO-8 SOIC-16 D2 S1 1 .56 D1 4 3 5 2 6 1 G2 S2 SuperSOT TM-6 pin 1 Absolute Maximum Ratings Symbol Parameter VDSS G1 TA = 25C unless otherwise note Ratings Units Drain-Source Voltage 30 V VGSS Gate-Source Voltage - Continuous 20 V ID Drain Current - Continuous 2.5 A PD Maximum Power Dissipation - Pulsed TJ,TSTG 10 (Note 1a) 0.96 (Note 1b) 0.9 (Note 1c) 0.7 Operating and Storage Temperature Range W -55 to 150 C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 130 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 60 C/W (c) 1999 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: FDC6561AN/D ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 30 BVDSS/TJ Breakdown Voltage Temp. Coefficient ID = 250 A, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V o V mV/oC 23.6 TJ = 55 oC 1 A 10 A IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A VGS(th)/TJ Gate Threshold VoltageTemp.Coefficient ID = 250 A, Referenced to 25 oC 1 RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.5 A TJ = 125 C VGS = 4.5 V, ID = 2.0 A On-State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 2.5 A 3 V mV/oC -4 o ID(on) 1.8 0.082 0.095 0.122 0.152 0.113 0.145 10 A 5 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 15 V, VGS = 0 V, 220 pF Coss Output Capacitance f = 1.0 MHz 50 pF Crss Reverse Transfer Capacitance 25 pF SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDD = 5 V, ID = 1 A, 6 12 ns tr Turn - On Rise Time VGS = 10 V, RGEN = 6 10 18 ns tD(off) Turn - Off Delay Time 12 22 ns tf Turn - Off Fall Time 2 6 ns Qg Total Gate Charge VDS = 15 V, ID = 2.5 A 2.3 3.2 nC Qgs Gate-Source Charge VGS = 5 V 0.7 1 nC Qgd Gate-Drain Charge 0.9 1.3 nC 0.75 A 1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS IS Continuous Source Diode Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.75 A (Note 2) 0.78 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. a. 130OC/W on a 0.125 in2 pad of 2oz copper. b. 140OC/W on a 0.005 in2 pad of 2oz copper. www.onsemi.com 2 c. 180OC/W on a minimum pad. Typical Electrical Characteristics 2 8 R DS(ON) , NORMALIZED VGS =10V 6.0V 4.5V 4.0V 6 3.5V 4 2 0 3.0V 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 10 1.8 4.5V 1.4 5.0V 6.0V 1.2 7.0V 10V 1 0.8 4 VGS = 4.0V 1.6 0 2 4 6 I D , DRAIN CURRENT (A) 8 10 Figure 2. On-Resistance Variation with Figure 1. On-Region Characteristics. Drain Current and Gate Voltage. 0.3 R DS(ON) , ON-RESISTANCE (OHM) I D = 2.5 A VGS = 10 V 1.4 1.2 1 0.8 0.6 -50 I D = 1.3A 0.25 0.2 0.1 TA = 25C 0.05 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. with Temperature. 10 VDS = 5V TA = -55C 8 IS , REVERSE DRAIN CURRENT (A) 10 125C 25C 6 4 2 0 TA = 125C 0.15 Figure 3. On-Resistance Variation ID , DRAIN CURRENT (A) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1 2 3 4 5 VGS , GATE TO SOURCE VOLTAGE (V) V GS = 0V 1 TA = 125C -55C 0.01 0.001 0.0001 6 25C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Figure 5.Transfer Characteristics. Variation with Source Current and Temperature. www.onsemi.com 3 Typical Electrical Characteristics (continued) 500 ID = 2.5A C iss 8 VDS = 5V 15V CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 10 6 10V 4 200 100 C oss 50 20 0 0 1 2 Q g , GATE CHARGE (nC) 3 10 0.1 4 Figure 7. Gate Charge Characteristics. IT LIM 1m s 10m s 100 ms 1s DC 0.3 VGS = 10V SINGLE PULSE RJA =180C/W TA = 25C 0.1 0.03 0.01 0.1 SINGLE PULSE RJA =180C/W TA = 25C 4 0.3 POWER (W) ) ON S( RD 100 us 1 3 2 1 1 3 10 30 0 0.01 50 0.1 Figure 9. Maximum Safe Operating Area. TRANSIENT THERMAL RESISTANCE 1 10 100 SINGLE PULSE TIME (SEC) VDS , DRAIN-SOURCE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE 30 5 10 I D , DRAIN CURRENT (A) 0.5 1 2 5 10 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 30 3 C rss f = 1 MHz V GS = 0V 2 Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 D = 0.5 0.2 0.2 0.1 R JA (t) = r(t) * R JA R JA =180C/W 0.1 P(pk) 0.05 t1 0.05 0.02 0.01 0.02 0.01 0.0001 t2 TJ - T A = P * R JA (t) Duty Cycle, D = t 1 / t 2 Single Pulse 0.001 0.01 0.1 1 t 1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 10 100 300 300 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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