tm
Fabruary 2010
FDS8984_F085 N-Channel PowerTrench® MOSFET
©2010 Fairchild Semiconductor Corporation
FDS8984_F085 Rev. A
www.fairchildsemi.com1
FDS8984_F085
N-Channel PowerTrench® MOSFET
30V, 7A, 23mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Features
Max rDS(on) = 23mΩ, VGS = 10V, ID = 7A
Max rDS(on) = 30mΩ, VGS = 4.5V, ID = 6A
Low gate charge
100% RG tested
Qualified to AEC Q101
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
ID
Drain Current Continuous (Note 1a) 7 A
Pulsed 30 A
EAS Single Pulse Avalache Energy (Note 2) 32 mJ
PD
Power Dissipation for Single Operation 1.6 W
Derate above 25°C 13 mW/°C
TJ, TSTG Operating and Storage Temperature -55 to 150 °C
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDS8984 FDS8984_F085 SO-8 330mm 12mm 2500 units
3
6
4
7
8
2
5
1
Q2
Q1
S
D
S
S
SO-8
D
D
D
G
D1
D1
D2 D2
S1G1S2G2
Pin 1
SO-8
RoHS Compliant
FDS8984_F085 N-Channel PowerTrench® MOSFET
FDS8984_F085 Rev. A www.fairchildsemi.com2
Electrical Characteristics TJ = 25°C unless otherwise noted
Off Characteristics
On Characteristics (Note 3)
Dynamic Characteristics
Switching Characteristics (Note 3)
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to
25°C 23 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24V
VGS = 0V
1µA
TJ = 125°C 250
IGSS Gate to Source Leakage Current VGS = ±20V,VDS = 0V ±100 nA
VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250µA 1.2 1.7 2.5 V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to
25°C - 4.3 mV/°C
rDS(on) Drain to Source On Resistance
VGS = 10V, ID = 7A 19 23
mΩ
VGS = 4.5V, ID = 6A 24 30
VGS = 10V, ID = 7A,
TJ = 125°C 26 32
Ciss Input Capacitance VDS = 15V, VGS = 0V,
f = 1.0MHz
475 635 pF
Coss Output Capacitance 100 135 pF
Crss Reverse Transfer Capacitance 65 100 pF
RGGate Resistance f = 1MHz 0.9 1.6 Ω
td(on) Turn-On Delay Time
VDD = 15V, ID = 7A
VGS = 10V, RGS = 33Ω
510ns
trRise Time 918ns
td(off) Turn-Off Delay Time 42 68 ns
tfFall Time 21 34 ns
QgTotal Gate Charge VDS = 15V, VGS = 10V,
ID = 7A 9.2 13 nC
QgTotal Gate Charge VDS = 15V, VGS = 5V,
ID = 7A
5.0 7 nC
Qgs Gate to Source Gate Charge 1.5 nC
Qgd Gate to Drain “Miller” Charge 2.0 nC
VSD Source to Drain Diode Voltage ISD = 7A 0.9 1.25 V
ISD = 2.1A 0.8 1.0 V
trr Diode Reverse Recovery Time IF = 7A, di/dt = 100A/µs33 ns
Qrr Diode Reverse Recovery Charge 20 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
Scale 1 : 1 on letter size paper
2: Starting TJ = 25°C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V.
3: Pulse Test:Pulse Width <300µs, Duty Cycle <2%.
c) 135°C/W when
mounted on a
minimun pad
b) 125°C/W when
mounted on a 0.02 in2
pad of oz copper
a) 78°C/W when
mounted on a 0.5in2
pad of 2 oz copper
FDS8984_F085 N-Channel PowerTrench® MOSFET
FDS8984_F085 Rev. A www.fairchildsemi.com3
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
10
20
30
VGS=10V
VGS=5.0V
VGS=4.5V
VGS=4.0V
VGS=3.5V
VGS=3.0V
PULSE DURATION =80µS
DUTY CYCLE =0.5% MAX
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
5 1015202530
0.5
1.0
1.5
2.0
2.5
3.0
PULSE DURATION =80µS
DUTY CYCLE =0.5% MAX
VGS=3.5V
VGS=4.0V VGS=4.5V
VGS=5.0V VGS=10V
VGS=3.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
On-Resistance vs Drain Current and
Gate Voltage
Figure 3.
-80 -40 0 40 80 120 160
0.6
0.8
1.0
1.2
1.4
1.6
ID = 7A
VGS = 10V
TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
On Resistance vs Temperature Figure 4.
246810
15
20
25
30
35
40
45
50
55
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 125oC
TJ = 25oC
ID = 7A
RDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mOHM)
VGS, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to Source
Votlage
Figure 5.
1234
0
5
10
15
20
25
30
PULSE DURATION =80µS
DUTY CYCLE =0.5% MAX
TJ = - 55OC
TJ = 25OC
TJ = 150OC
VDD = 5V
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1E-3
0.01
0.1
1
10
VSD, BODY DIODE FORWARD VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
TJ = -55oC
TJ = 25oC
TJ = 150oC
VGS = 0V
30
Source to Drain Diode Forward Voltage
vs Source Current
FDS8984_F085 N-Channel PowerTrench® MOSFET
FDS8984_F085 Rev. A www.fairchildsemi.com4
Figure 7. Gate Charge Characteri
0246810
0
2
4
6
8
10
VDD = 20V
VDD = 10V
VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = 15V
stics Figure 8. Capacitance vs Drain to Source Voltage
0.1 1 10
100
200
300
400
500
600
700
CRSS
COSS
CISS
f = 1MHz
VGS = 0V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 9. Unclamped Inductive Switching
Capability
0.01 0.1 1 10
1
10
20
STARTING TJ = 125OC
STARTING TJ = 25OC
IAS, AVALANCHE CURRENT (A)
tAV, TIME IN AVALANCHE (mS)
20
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
25 50 75 100 125 150
0
1
2
3
4
5
6
7
8
VGS=4.5V
VGS=10V
ID, DRAIN CURRENT (A)
TA, AMBIENT TEMPERATURE (oC)
Figure 11. Forward Bias Safe Operating Area
0.1 1 10 100
0.01
0.1
1
10
100
DC
1s
100ms
10ms
1ms
100us
10us
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TA = 25oC
Figure 12. Single Pulse Maximum Power
Dissipation
10-5 10-4 10-3 10-2 10-1 100101102103
1
10
100
1000
VGS=10V
SINGLE PULSE
t, PULSE WIDTH (s)
P(PK), PEAK TRANSIENT POWER (W)
3000
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150 TA
–
125
------------------------
Typical Characteristics TJ = 25°C unless otherwise noted
FDS8984_F085 N-Channel PowerTrench® MOSFET
FDS8984_F085 Rev. A www.fairchildsemi.com5
Figure 13. Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 100101102103
1E-4
1E-3
0.01
0.1
1DUTY CYCLE - DESCENDING ORDER
Normalized Thermal
Impedance ZθJA
t, RECTANGULAR PULSE DURATION(s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
PDM
t1
t2
Typical Characteristics TJ = 25°C unless otherwise noted
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Definition of Terms
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
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FETBench™
FlashWriter® *
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FRFET®
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MegaBuck™
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MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
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OptiHiT™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise®
®
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TinyBuck™
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TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
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Rev. I47
™
FDS8984_F085 N-Channel PowerTrench® MOSFET
FDS8984_F085 Rev. A www.fairchildsemi.com6
