HFA320NJ40CPBF - Vishay Presicion Group

Document Number: 94072 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 01-Aug-08 1

HEXFRED®

Ultrafast Soft Recovery Diode, 320 A

HFA320NJ40CPbF

Vishay High Power Products

FEATURES

• Very low Qrr and trr

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced snubbing

DESCRIPTION

HEXFRED® diodes are optimized to reduce losses and

EMI/RFI in high frequency power conditioning systems. An

extensive characterization of the recovery behavior for

different values of current, temperature and dI/dt simplifies

the calculations of losses in the operating conditions. The

softness of the recovery eliminates the need for a snubber in

most applications. These devices are ideally suited for

power converters, motors drives and other applications

where switching losses are significant portion of the total

losses.

PRODUCT SUMMARY

IF(AV) 320 A

VR400 V

IF(DC) at TC255 A at 85 °C

Base common

cathode

Lug

terminal

anode 1

Lug

terminal

anode 2

TO-244

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage VR400 V

Continuous forward current IF

TC = 25 °C 420

TC = 85 °C 255

TC = 115 °C 160

Single pulse forward current IFSM Limited by junction temperature 1200

Non-repetitive avalanche energy EAS L = 100 µH, duty cycle limited by maximum TJ1.4 mJ

Maximum power dissipation PD

TC = 25 °C 625 W

TC = 100 °C 250

Operating junction and storage

temperature range TJ, TStg - 55 to 150 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode

breakdown voltage VBR IR = 100 µA 400 - -

Maximum forward voltage VFM

IF = 160 A

See fig. 1

- 1.10 1.35

IF = 320 A - 1.30 1.54

IF = 160 A, TJ = 125 °C - 1.00 1.20

Maximum reverse

leakage current IRM TJ = 125 °C, VR = 400 V See fig. 2 - 0.9 3 mA

Junction capacitance CTVR = 200 V See fig. 3 - 370 500 pF

Series inductance LSFrom top of terminal hole to mounting plane - 5.0 - nH

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94072

2Revision: 01-Aug-08

HFA320NJ40CPbF

Vishay High Power Products HEXFRED®

Ultrafast Soft Recovery

Diode, 320 A

Note

(1) Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface.

Gradually tighten each mounting bolt in 5 to 10 lbf ⋅ in steps until desired or maximum torque limits are reached.

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time

See fig. 5 trr

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 45 -

nsTJ = 25 °C

IF = 160 A

dIF/dt = 200 A/µs

VR = 200 V

- 90 140

TJ = 125 °C - 290 440

Peak recovery current

See fig. 6 IRRM

TJ = 25 °C - 8.7 20 A

TJ = 125 °C - 18 30

Reverse recovery charge

See fig. 7 Qrr

TJ = 25 °C - 420 1100 nC

TJ = 125 °C - 2600 7000

Peak rate of recovery current

See fig. 8 dI(rec)M/dt TJ = 25 °C - 300 - A/µs

TJ = 125 °C - 280 -

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range TJ, TStg - 55 - 150 °C

Thermal resistance, junction to case per leg RthJC - - 0.19

°C/W

K/W

per module - - 0.095

Typical thermal resistance, case to heatsink RthCS -0.10-

Weight -68- g

-2.4-oz.

Mounting torque

(1) 30 (3.4) - 40 (4.6)

N ⋅ m

(lbf ⋅ in)

center hole 12 (1.4) - 18 (2.1)

Terminal torque 30 (3.4) - 40 (4.6)

Vertical pull --80

lbf ⋅ in

2" lever pull --35

Document Number: 94072 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 01-Aug-08 3

HFA320NJ40CPbF

HEXFRED®

Ultrafast Soft Recovery

Diode, 320 A

Vishay High Power Products

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current (Per Leg)

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage (Per Leg)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

(Per Leg)

Fig. 4 - Maximum Allowable Case Temperature vs. DC

Forward Current (Per Leg)

Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)

Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg)

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

0.2 1.80.8

VFM - Forward Voltage Drop (V)

IF - Instantaneous Forward Current (A)

100

0.4 1.4

1000

0.6 1.0 1.61.2

100

VR - Reverse Voltage (V)

IR - Reverse Current (µA)

200 400

1000

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

10 000

300

0.1

1000

10 000

1 10 100 1000

100

VR - Reverse Voltage (V)

CT - Junction Capacitance (pF)

TJ = 25 °C

160

0 100 300 500

IF(AV) - DC Forward Current (A)

Maximum Allowable

Case Temperature (°C)

140

120

100

200 400

250

100 1000

dIF/dt (A/µs)

trr (ns)

TJ = 125 °C

TJ = 25 °C

150

100

IF = 200 A

IF = 160 A

IF = 70 A

200

300

350

400

100 1000

dIF/dt (A/µs)

IRRM (A)

IF = 200 A

IF = 160 A

IF = 70 A

TJ = 125 °C

TJ = 25 °C

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94072

4Revision: 01-Aug-08

HFA320NJ40CPbF

Vishay High Power Products HEXFRED®

Ultrafast Soft Recovery

Diode, 320 A

Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg)

Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)

4000

100 1000

dIF/dt (A/µs)

Qrr (nC)

TJ = 125 °C

TJ = 25 °C

2000

1000

3000

5000 IF = 200 A

IF = 160 A

IF = 70 A

6000

7000

1000

100

100 1000

dIF/dt (A/µs)

dI(rec)M/dt (A/µs)

10 000

TJ = 125 °C

TJ = 25 °C

200 A

160 A

70 A

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

- Rectangular Pulse Duration (s)

thJC

- Thermal Response

Single pulse

(thermal response)

0.001

D = 0.50

D = 0.33

D = 0.25

D = 0.17

D = 0.08

Document Number: 94072 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 01-Aug-08 5

HFA320NJ40CPbF

HEXFRED®

Ultrafast Soft Recovery

Diode, 320 A

Vishay High Power Products

Fig. 10 - Reverse Recovery Parameter Test Circuit

Fig. 11 - Reverse Recovery Waveform and Definitions

Fig. 12 - Avalanche Test Circuit and Waveforms

IRFP250

D.U.T.

L = 70 µH

= 200 V

0.01 Ω

/dt

adjust

0.5 I

RRM

(rec)M

/dt

0.75 I

RRM

/dt

(1)

(2)

(3)

(4)

(5)

(1) dIF/dt - rate of change of current

through zero crossing

(2) IRRM - peak reverse recovery current

(3) trr - reverse recovery time measured

from zero crossing point of negative

going IF to point where a line passing

through 0.75 IRRM and 0.50 IRRM

extrapolated to zero current.

(4) Qrr - area under curve defined by trr

and IRRM

trr x IRRM

Qrr =

(5) dI(rec)M/dt - peak rate of change of

current during tb portion of trr

V(AVAL)

VR(RATED)

IL(PK)

Decay

time

Current

monitor

High-speed

switch

D.U.T.

Rg = 25 Ω

Freewheel

diode

Vd = 50 V

L = 100 µH

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94072

6Revision: 01-Aug-08

HFA320NJ40CPbF

Vishay High Power Products HEXFRED®

Ultrafast Soft Recovery

Diode, 320 A

ORDERING INFORMATION TABLE

1- HEXFRED® family, electron irradiated

2- Average current rating

3- NJ = TO-244

- Voltage rating (400 V)

- C = Common cathode

- Lead (Pb)-free

Device code

51324

HFA 320 NJ 40 C PbF

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95021

Document Number: 95021 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 25-Jun-07 1

TO-244

Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters (inches)

Ø 5.2 (Ø 0.20)

9.6 (0.37) MIN.

93 (3.66) MAX.

¼" - 20 UNC

80 (3.15)

13 (0.51)

35 (1.37) REF.

7 (0.27)

6 (0.23)

17.5 (0.69)

16.5 (0.65)

21 (0.82)

20 (0.78)

Ø 7.2 (Ø 0.28)

(2 places)

12.6 (0.5)

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Revision: 12-Mar-12 1Document Number: 91000

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