August 2011 Doc ID 4166 Rev 5 1/7
7
MJE172
Low voltage high speed switching NPN transistor
Features
■High speed switching
■NPN device
Applications
■Audio amplifier
■High speed switching applications
Description
This device is an NPN low voltage transistor
manufactured using epitaxial planar technology
and housed in a SOT-32 plastic package. It is
designed for low power audio amplifiers and low
current, high speed switching applications.
Figure 1. Internal schematic diagram
SOT-32
Table 1. Device summary
Order code Marking Package Packaging
MJE172 MJE172 SOT-32 Tube
www.st.com
Electrical ratings MJE172
2/7 Doc ID 4166 Rev 5
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCEO Collector-emitter voltage (IB = 0) 80 V
VCBO Collector-base voltage (IE = 0) 100 V
VEBO Base-emitter voltage (IC = 0) 7 V
ICCollector current 3 A
ICM Collector peak current (tP < 5 ms) 6 A
IBBase current 1 A
IBM Base peak current (tP < 5 ms) 2 A
PTOT Total dissipation at Tc ≤ 25 °C 12.5 W
Tstg Storage temperature -65 to 150 °C
TJTotal power dissipation at Tc ≤ 25 °C 150
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case_max 10 °C/W
Rth-amb Thermal resistance junction-ambient_max 83.3 °C/W
MJE172 Electrical characteristics
Doc ID 4166 Rev 5 3/7
2 Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE = 0)
VCB= 100 V
VCB = 100 V, Tc = 150 °C
0.1
0.1
µA
mA
VEBO
Emitter cut-off current
(IC = 0)
VEB = 7 V 0.1 µA
VCEO(sus)(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 1.5 %.
Collector-emitter
sustaining voltage (IB = 0) IC = 10 mA 80 V
VCE(sat) (1) Collector-emitter
saturation voltage
IC = 0.5 A IB = 50 mA
IC = 1.5 A IB = 0.15 A
IC = 3 A IB = 0.6 A
0.3
0.9
1.7
V
VBE(sat) (1) Base-emitter saturation
voltage
IC = 1.5 A IB = 0.15 A
IC = 3 A IB = 0.6 A
1.5
2
V
V
VBE(on) (1) Base-emitter on voltage IC = 0.5 A VCE =1 V 1.2 V
hFE DC current gain
IC = 0.1 A VCE = 1 V
IC = 0.5 A VCE = 1 V
IC = 1.5 A VCE = 1 V
50
30
12
250
fTTransistor frequency IC = 0.1 A VCE = 10 V
f=10 MHz
50 MHz
CCBO
Collector-base
capacitance (IE=0) VCB = 10 V f= 0.1 MHz 60 pF
Package mechanical data MJE172
4/7 Doc ID 4166 Rev 5
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
MJE172 Package mechanical data
Doc ID 4166 Rev 5 5/7
Figure 2. SOT-32 (TO-126) drawing
Table 5. SOT-32 (TO-126) mechanical data
Dim.
mm.
Min. Typ. Max.
A 2.40 2.90
B 0.64 0.88
B1 0.39 0.63
D 10.50 11.05
E 7.40 7.80
e 2.04 2.29 2.54
e1 4.07 4.58 5.08
L 15.30 16
ØP 2.90 3.20
Q3.80
Q1 1 1.52
H2 2.15
I1.27
?2%6?%
Revision history MJE172
6/7 Doc ID 4166 Rev 5
4 Revision history
Table 6. Document revision history
Date Revision Changes
22-Sep-2003 4
08-Aug-2011 5 – Part number MJE172 has been moved to a separate datasheet.
– Minor text changes
MJE172
Doc ID 4166 Rev 5 7/7
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