• Co-Pack N-channel HEXFET® Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
• Lead-Free
FETKY MOSFET / SCHOTTKY DIODE
Parameter Max. Units
Maximum Junction-to-AmbientRθJA 50 °C/W
Thermal Resistance
Description
The FETKY™ family of Co-Pack HEXFET® MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. HEXFET power
MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combining this technology with International Rectifier ’s
low forward drop Schottky rectifiers results in an extremely
efficient device suitable for use in a wide variety of
portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Top Vie
w
8
1
2
3
45
6
7
A
/S
A
/S
A
/S
G
K/
D
K/D
D
K/D
K/
D
IRF7807D2PbF
PD- 95436A
www.irf.com 1
10/7/04
IRF7807D2
VDS 30V
RDS(on) 25mΩ
Qg 14nC
QSW 5.2nC
Qoss 21.6nC
Device Features (Max Values)
SO-8
Parameter Symbol Max. Units
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS ±12
Continuous Drain or Source 25°C ID8.3
Current (VGS ≥ 4.5V) 70°C 6.6 A
Pulsed Drain CurrentIDM 66
Power Dissipation 25°C PD2.5
70°C 1.6
Schottky and Body Diode 25°C IF (AV) 3.7 A
Average ForwardCurrent70°C 2.3
Junction & Storage Temperature Range TJ, TSTG –55 to 150 °C
Absolute Maximum Ratings
V
W
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Schottky Diode & Body Diode Ratings and Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward V oltage VSD 0.54 V Tj = 25°C, Is = 3A, VGS =0V
0.43 Tj = 125°C, Is = 3A, VGS =0V
Reverse Recovery Time trr 36 ns Tj = 25°C, Is = 7.0A, VDS = 16V
Reverse Recovery Charge Qrr 41 nC di/dt = 100A/µs
Forward T urn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
50% Duty Cycle, Rectangular
* Devices are 100% tested to these parameters.
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source V(BR)DSS 30 V VGS = 0V, ID = 250µA
Breakdown Voltage*
Static Drain-Source RDS(on) 17 25 mΩVGS = 4.5V, ID = 7A
on Resistance*
Gate Threshold Voltage* VGS(th) 1.0 V VDS = VGS,ID = 250µA
Drain-Source Leakage IDSS 90 µAV
DS = 24V, VGS = 0V
Current* 7.2 mA VDS = 24V, VGS = 0V,
Tj = 125°C
Gate-Source Leakage IGSS +/- 100 nA VGS = +/-12V
Current*
Total Gate Charge Qgsync 10.5 14 VDS<100mV,
Synch FET* VGS = 5V, ID = 7A
Total Gate Charge Qgcont 12 17 VDS= 16V,
Control FET* VGS = 5V, ID = 7A
Pre-Vth Qgs1 2.1 VDS = 16V, ID = 7A
Gate-Source Charge
Post-Vth Qgs2 0.76 nC
Gate-Source Charge
Gate to Drain Charge Qgd 2.9
Switch Charge* QSW 3.66 5.2
(Qgs2 + Qgd)
Output Charge* Qoss 17.6 21.6 VDS = 16V, VGS = 0
Gate Resistance Rg1.2 Ω
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Fig 3. Typical Reverse Output Characteristics Fig 4. Typical Reverse Output Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0.1 110
VDS, Drain-to-Source Voltage (V)
1
10
100
ID, Drain-to-Source Current (A)
380µs PULSE WIDTH
Tj = 25°C
2.5V
VGS
TOP 4.5V
3.5V
3.0V
BOTTOM 2. 5V
0.1 110
VDS, D rain-to-Source Voltage (V)
1
10
100
ID, Drain-to-Source Current (A)
380µs PULSE WI D TH
Tj = 150° C
VGS
TOP 4.5V
3.5V
3.0V
BOTTOM 2.5V
2.5V
00.2 0.4 0.6 0.8 1
VSD, Source-to- D rain Voltage ( V )
0
10
20
30
40
50
60
70
IS, Source-to-Drain Current (A)
380µs PULSE WI D TH
Tj = 25°C
VGS
TOP 4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 0.0V
0.0 V
00.2 0.4 0.6 0.8 1
VSD, Source-to- Drain Vol t age (V)
0
10
20
30
40
50
60
70
IS, Source-to-Drain Current (A)
380µS PULSE WIDTH
Tj = 150°C
VGS
TOP 4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 0.0V
O.OV
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4www.irf.com
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance
Vs. Temperature
1 10 100
0
400
800
1200
1600
2000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Crss
Coss
Ciss
2.5 3.0 3.5
VGS, G ate-to-Source Volt age (V)
10
100
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 150°C
VDS = 10V
380µs PULSE WI D TH
0 4 8 12
QG, Total Gate Charge (nC)
0
2
4
6
VGS, Gate-to-Source Voltage (V)
ID= 7.0A
VDS = 16V
-60 -40 -20 020 40 60 80 100 120 140 160
TJ, Junct i on Tem perat ure (°C )
0.5
1.0
1.5
2.0
RDS(on), Drain-to-Source On Resistance
(Normalized)
ID = 7.0A
VGS = 4.5V
IRF7807D2PbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (MOSFET)
0.1
1
10
100
0.001 0.01 0.1 1 10 100
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pul se Durati on ( sec)
Thermal R esponse (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 9. On-Resistance Vs. Gate Voltage
020 40 60 80
0.016
0.018
0.020
0.022
0.024
R , Drain-to-Sou rce On Resistance
I , Drain Curre nt (A)
D
DS (on)
VGS = 10V
VGS = 4. 5V
Fig 10. On-Resistance Vs. Drain Current
( Ω )
2.0 4.0 6.0 8.0 10.0
VGS, Gate -to -Source Voltage (V)
0.01
0.02
0.03
0.04
0.05
RDS(on), Drain-to -Source On Resistance (Ω)
ID = 7.0A
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Mosfet, Body Diode & Schottky Diode Characteristics
Fig. 13 - Typical Values of
Reverse Current Vs. Reverse Voltage
Fig. 12 - Typical Forward Voltage Drop
Characteristics
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Forward V oltage D rop - V SD ( V )
0.1
1
10
100
Instantaneous Forward Current - IF ( A )
Tj = 125°C
Tj = 25°C
0 5 10 15 20 25 30
Rever se Volt age - VR (V)
0.001
0.01
0.1
1
10
100
Reverse Current - IR ( mA )
125°C
100°C
Tj = 150°C
75°C
50°C
25°C
IRF7807D2PbF
www.irf.com 7
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 B ASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 4 5°
8X L 8X c
y
0.25 [.010] C A B
e1 A
A1
8X b
C
0.10 [.004]
4312
F OOT PRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASM E Y14.5M - 1994.
2. CONTROLLING DIMENSION: MILLIME TER
3. DIMENS IONS A RE SHOWN IN MILLIMET ERS [INCHES ].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS N OT TO EX CEED 0.25 [.010] .
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERIN G TO
A SUBSTRATE.
MOLD PROTRUSIONS N OT TO EX CEED 0.15 [.006] .
8X 1.78 [.07
0]
SO-8 (Fetky) Package Outline
Dimensions are shown in millimeters (inches)
RECTIFIER
LOGO
INTERNATIONAL
EXAMPLE: THIS IS AN IRF780 7D1 (FETKY)
XXXX
807D1
Y = LAST DIGIT OF THE YEAR
A = AS SEMBLY S ITE CODE
WW = WEEK
LOT CODE
PRODUCT (OPTION AL)
P = DISGNATE S LEAD - FREE
DATE COD E (YWW)
PART NUMBER
SO-8 (Fetky) Part Marking Information
IRF7807D2PbF
8www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
330.0 0
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTE S :
1. CONTR OLLI NG DIM EN SI ON : MILLI METER.
2. OU TLINE CON FORMS T O EIA-481 & EIA-541.
F EED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N
OTES:
1
. CONTR OLLI NG DIMENSION : MI LLIME T ER .
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3
. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 (Fetky) Tape and Reel
Dimensions are shown in millimeters (inches)
