PD- 95436A IRF7807D2PbF * Co-Pack N-channel HEXFET(R) Power MOSFET and Schottky Diode * Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output * Low Conduction Losses * Low Switching Losses * Low Vf Schottky Rectifier * Lead-Free FETKY MOSFET / SCHOTTKY DIODE SO-8 Description The FETKYTM family of Co-Pack HEXFET(R) MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. A/S 1 8 K/D A/S 2 7 K/D A/S 3 6 K/D G 4 5 K/D D Top View Device Features (Max Values) IRF7807D2 VDS RDS(on) Qg QSW Qoss 30V 25m 14nC 5.2nC 21.6nC The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings Parameter Symbol Max. Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 12 ID 8.3 Continuous Drain or Source 25C Current (VGS 4.5V) 70C Pulsed Drain Current Power Dissipation 6.6 IDM 25C PD 70C Schottky and Body Diode 25C Average ForwardCurrent 70C Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient www.irf.com V A 66 2.5 1.6 IF (AV) Units 3.7 W A 2.3 TJ, TSTG -55 to 150 C RJA Max. 50 Units C/W 1 10/7/04 IRF7807D2PbF Electrical Characteristics Parameter Min Drain-to-Source Breakdown Voltage* V(BR)DSS Static Drain-Source on Resistance* RDS(on) Typ Max 30 17 Gate Threshold Voltage* VGS(th) 25 1.0 Units Conditions V VGS = 0V, ID = 250A m VGS = 4.5V, ID = 7A V VDS = VGS,ID = 250A Drain-Source Leakage Current* IDSS 90 7.2 A mA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, Tj = 125C Gate-Source Leakage Current* Total Gate Charge Synch FET* Total Gate Charge Control FET* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge* (Qgs2 + Qgd) IGSS +/- 100 nA VGS = +/-12V Qgsync 10.5 14 Qgcont 12 17 Qgs1 2.1 Qgs2 0.76 Qgd QSW 2.9 3.66 5.2 Output Charge* Qoss 17.6 21.6 Gate Resistance Rg 1.2 VDS<100mV, VGS = 5V, ID = 7A VDS= 16V, VGS = 5V, ID = 7A VDS = 16V, ID = 7A nC VDS = 16V, VGS = 0 Schottky Diode & Body Diode Ratings and Characteristics Parameter Diode Forward Voltage VSD Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time trr Qrr ton * Min Typ 36 41 Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3A, VGS =0V Tj = 125C, Is = 3A, VGS =0V ns Tj = 25C, Is = 7.0A, VDS = 16V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. 50% Duty Cycle, Rectangular Devices are 100% tested to these parameters. 2 www.irf.com IRF7807D2PbF 100 100 VGS 4.5V 3.5V 3.0V BOTTOM 2.5V VGS 4.5V 3.5V 3.0V BOTTOM 2.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 2.5V 10 380s PULSE WIDTH Tj = 25C 2.5V 10 1 380s PULSE WIDTH Tj = 150C 1 0.1 1 10 0.1 1 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 70 VGS TOP 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V 50 VGS 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP 60 IS, Source-to-Drain Current (A) 60 IS, Source-to-Drain Current (A) 10 40 30 20 0.0 V 10 380s PULSE WIDTH Tj = 25C 50 40 30 20 O.OV 10 380S PULSE WIDTH Tj = 150C 0 0 0 0 0.2 0.4 0.6 0.8 1 VSD, Source-to-Drain Voltage (V) Fig 3. Typical Reverse Output Characteristics www.irf.com 0.2 0.4 0.6 0.8 1 VSD, Source-to-Drain Voltage (V) Fig 4. Typical Reverse Output Characteristics 3 IRF7807D2PbF 2000 1200 ID = 7.0A VGS, Gate-to-Source Voltage (V) 1600 C, Capacitance (pF) 6 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss Coss 800 400 Crss 4 2 0 0 1 VDS = 16V 10 100 0 VDS , Drain-to-Source Voltage (V) 8 12 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 2.0 ID = 7.0A ID, Drain-to-Source Current () VGS = 4.5V (Normalized) R DS(on) , Drain-to-Source On Resistance 4 1.5 1.0 0.5 T J = 150C VDS = 10V 380s PULSE WIDTH 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J, Junction Temperature (C ) Fig 7. Normalized On-Resistance Vs. Temperature 4 T J = 25C 2.5 3.0 3.5 VGS, Gate-to-Source Voltage (V) Fig 8. Typical Transfer Characteristics www.irf.com R DS (on), Drain-to-Source On Resistance( ) 0.05 0.04 0.03 ID = 7.0A 0.02 0.01 2.0 4.0 6.0 8.0 10.0 0.024 0.022 VGS = 4.5V 0.020 VGS = 10V 0.018 0.016 0 20 40 60 80 I D , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 10. On-Resistance Vs. Drain Current Fig 9. On-Resistance Vs. Gate Voltage 100 Thermal Response (Z thJA ) R DS(on) , Drain-to -Source On Resistance ( ) IRF7807D2PbF D = 0.50 10 0.20 0.10 0.05 0.02 0.01 1 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.1 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (MOSFET) www.irf.com 5 IRF7807D2PbF Mosfet, Body Diode & Schottky Diode Characteristics 100 100 Reverse Current - I R ( mA ) Tj = 150C Tj = 125C Instantaneous Forward Current - I F ( A ) Tj = 25C 10 10 125C 100C 1 75C 0.1 50C 25C 0.01 0.001 0 5 10 15 20 25 30 Reverse Voltage - VR (V) Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage Drop - V SD ( V ) Fig. 12 - Typical Forward Voltage Drop Characteristics 6 www.irf.com IRF7807D2PbF SO-8 (Fetky) Package Outline Dimensions are shown in millimeters (inches) D DIM B 5 A 8 6 7 6 H E 0.25 [.010] 1 2 3 A 4 MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC e1 6X e e1 C 1.27 BAS IC .025 BAS IC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A 8X b MILLIMETERS MAX A 5 INCHES MIN A1 8X c 8X L 7 C A B F OOTPRINT NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A S UBS TRATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: T HIS IS AN IRF7807D1 (F ET KY) INT ERNAT IONAL RECT IFIER LOGO www.irf.com XXXX 807D1 DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY SIT E CODE LOT CODE PART NUMBER 7 IRF7807D2PbF SO-8 (Fetky) Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 8 www.irf.com