FFSP4065BDN-F085 Product Preview Silicon Carbide Schottky Diode, 650 V, 40 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. www.onsemi.com 1 Anode 3 Anode Schottky Diode Features * * * * * * * * 2 Cathode/ Case Max Junction Temperature 175C Avalanche Rated 94 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Applications TO-220-3LD CASE 340AT MARKING DIAGRAM * Automotive HEV-EV Onboard Chargers * Automotive HEV-EV DC-DC Converters This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. $Y&Z&3&K FFSP 4065BDN $Y &Z &3 &K FFSP4065BDN = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2019 March, 2019 - Rev. P1 1 Publication Order Number: FFSP4065BDN-F085/D FFSP4065BDN-F085 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Parameter Symbol VRRM EAS Value Unit 650 V 94* mJ 20*/40** A TC = 25C, 10 ms 882 A TC = 150C, 10 ms 798 A Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy IF (Note 1) Continuous Rectified Forward Current @ TC < 136C IF, Max Non-Repetitive Peak Forward Surge Current IF,SM Non-Repetitive Forward Surge Current TC = 25C Half-Sine Pulse, tp = 8.3 ms 84 A Ptot Power Dissipation TC = 25C 95 W TC = 150C 16 W -55 to +175 C 60 Ncm TJ, TSTG Operating and Storage Temperature Range TO247 Mounting Torque, M3 Screw Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. * Per Leg, ** Per Device 1. EAS of 94 mJ is based on starting TJ = 25C, L = 0.5 mH, IAS = 19.4 A, V = 50 V. THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Value Unit 1.6*/0.8** C/W * Per Leg, ** Per Device ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted (per leg)) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 20 A, TC = 25C - 1.38 1.7 V IF = 20 A, TC = 125C - 1.6 2.0 IF = 20 A, TC = 175C - 1.72 2.4 VR = 650 V, TC = 25C - 0.5 40 VR = 650 V, TC = 125C - 1 80 VR = 650 V, TC = 175C - 2 160 Total Capacitive Charge V = 400 V - 51 - nC Total Capacitance VR = 1 V, f = 100 kHz - 866 - pF VR = 300 V, f = 100 kHz - 80 - VR = 600 V, f = 100 kHz - 70 - Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping FFSP4065BDN-F085 FFSP4065BDN TO-220-3LD (Pb-Free / Halogen Free) 50 Units / Tube www.onsemi.com 2 FFSP4065BDN-F085 TYPICAL CHARACTERISTICS -5 40 10 TJ = -55o C TJ = 25o C 30 TJ = 75oC IR, REVERSE CURRENT (A) IF , FORWARD CURRENT (A) (TJ = 25C unless otherwise noted (per leg)) TJ = 175o C TJ = 125o C 20 10 0 -6 10 TJ = 125oC TJ = 75oC TJ = 25oC TJ = -55 oC -8 10 -9 0 0.5 1.0 1.5 2.0 2.5 V F , FORWARD VOLTAGE (V) 10 3.0 Figure 1. Forward Characteristics 200 D = 0.1 100 D = 0.2 D = 0.3 D = 0.5 50 D=1 D = 0.7 25 50 75 100 125 150 90 60 30 0 175 25 o 50 75 100 125 150 175 TC, CASE TEMPERATURE ( C) o TC, CASE TEMPERATURE ( C) Figure 3. Current Derating Figure 4. Power Derating 90 2000 1000 CAPACITANCE (pF) Q C , CAPACITIVE CHARGE (nC) 200 300 400 500 600 650 V R , REVERSE VOLTAGE (V) 120 150 0 100 Figure 2. Reverse Characteristics P TOT , POWER DISSIPATION (W) IF , PEAK FORWARD CURRENT (A) TJ = 175oC -7 10 60 30 0 0 100 200 300 400 500 100 50 600 650 V R , REVERSE VOLTAGE (V) 0.1 1 10 100 650 V R , REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSP4065BDN-F085 TYPICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) E C, CAPACITIVE ENERGY ( mJ) 20 15 10 5 0 0 100 200 300 400 500 600 650 V R, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE-DESCENDING ORDER D=0.5 PDM 0.1 D=0.2 D=0.1 D=0.05 0.01 0.001 10 -6 t1 t2 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 1.6 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t 1 / t 2 D=0.02 D=0.01 SINGLE PULSE 10 -5 10 -4 10 -3 10 -2 1 10 -1 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction-to-Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD - t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t FFSP4065BDN-F085 PACKAGE DIMENSIONS TO-220-3LD CASE 340AT ISSUE A www.onsemi.com 5 FFSP4065BDN-F085 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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