LL4148 HIGH SPEED SWITCHING DIODE
FEATURES :
* Silicon Epitaxial Planar Diode
* High reliability
* Low reverse current
* Low forward voltage drop
* High speed switching
* Pb / RoHS Free
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
Maximum Ratin
g
s and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Symbol Value Unit
VRM 100 V
VR75 V
Maximum Continuous Current (1) IF200 mA
Maximum Average Forward Current
Half Wave Rectification with Resistive Load, f ≥ 50Hz (1)
Maximum Surge Forward Current at t < 1s and Tj = 25°CIFSM 500 mA
Maximum Power Dissipation (1) PD500 mW
Thermal Resistance Junction to tie-point RӨJtp 300 °C/W
Maximum Junction Temperature TJ175 °C
Storage Temperature Range TS-65 to + 175 °C
Note: (1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit
VR = 20 V - - 25 nA
VR = 75 V --5
μA
VR = 20 V , Tj = 150 °C- - 50 μA
Forward Voltage VFIF = 10 mA --1V
Diode Capacitance Cd - - 4 pF
IF = 10 mA , IR = 1mA,
VR = 6 V, RL = 100Ω
Page 1 of 2 Rev. 02 : March 25, 2005
IF(AV) 150 mA
IR
Test Condition
f = 1MHz ; VR = 0
Reverse Recovery Time Trr ns4--
Parameter
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
Reverse Current
0.098 (2.50)
Max.
0.142(3.6)
0.134(3.4)
φ 0.063 (1.64)
0.055
(
1.40
)
0.019(0.48)
0.011(0.28)
Cathode Mark
MiniMELF (SOD-80C)
Dimensions in inches and
(
millimeters
)
Mounting Pad Layout
0.049 (1.25)Min.
0.197 (5.00)
REF
0.079 (2.00)Min.
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RATING AND CHARACTERISTIC CURVES ( LL4148 )
FIG. 1 ADMISSIBLE POWER DISSIPATION FIG. 2 TYPICAL FORWARD VOLTAGE
VERSUS AMBIENT TEMPERATURE
FIG. 3 TYPICAL DIODE CAPACITANCE AS FIG. 4 TYPICAL REVERSE CURRENT
A FUNCTION OF REVERSE VOLTAGE VERSUS JUNCTION TEMPERATURE
Page 2 of 2 Rev. 02 : March 25, 2005
05 10
Reverse Voltage , VR (V)
0.4
0.5
1.2
Diode Capacitance , Cd (pF)
0 0.4 1.2
Forward Voltage , VF (V)
0.01
10
1000
Forward Current , IF (mA)
0.1
1
100
0
0 100 200
Ambient Temperature , Ta (°C)
200
600
0.2 0.6 1.0 1.4
0.6
0.7
0.8
0.9
1.0
400
800
0.8
f = 1MHz;
TJ = 25°C
TJ = 25°C
POWER DISSIPATION , PD (mW)
100 2000
1
10
102
103
104
Reverse Current , IR (nA)
Junction Temperature, Tj (°C)
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