IRF820/821/822/823 N-CHANNEL POWER MOSFETS FEATURES TO-220 Lower Ros (on) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability IRF820/82 1/822/823 PRODUCT SUMMARY T Part Number Vos Roson) lo IRF820 500V 3.00 2.5A IRF821 450V 3.02 2.5A IRF822 500V 4.00 2.2A IRF823 A450V 4.02 2.2A MAXIMUM RATINGS Characteristics Symbol IRF820 IRF821 IRF822 IRF823 Unit IRF420 IRF421 IRF422 IRF423 Drain-Source Voltage (1) Voss 500 450 500 450 Vdc Drain-Gate Voltage (Res=1.0M0D)(1} Vocr 500 450 500 450 Vde Gate-Source Voltage Ves +20 Vde Continuous Drain Current Tc=25C Ib 2.5 2.5 2.2 2.2 Adc Continuous Drain Current Tc=100C Ib 1.6 1.6 1.4 1.4 Adc Drain CurrentPulsed (3) lpm 8.0 8.0 7.0 7.0 Adc Gate CurrentPulsed lom +1.5 Adc Single Pulsed Avalanche Energy (4) Eas 210 mJ Avalanche Current las 2.5 A Total Power Dissipation @ Tc=25C Po 50 Watts Derate above 25C 0.4 wie ee ace Ts Tag ~88 0 160 c Mpurpoves, 1/8" from case for S seconds | Tt 300 *c Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse with limited by max. junction temperature (4) L=60 mH, Vag=50V, Rao=25N, Starting T=25C 204 & SAMSUNG B7E D MM 7964342 0017311 950 MESMNGK SAMSUNG ELECTRONICS INCb7E D MM 79b4L42 0017312 897 BESNGK SAMSUNG ELECTRONICS INC IRF820/821/822/823 N-CHANNEL POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Symbol | Characteristic Min! Typ | Max |Units Test Conditions | Drain-Source Breakdown Voltage By IRF820 500; Vv | Ves=0OV DSS | IRF822 Ip=250pA IRF821 IRF823 450, - | | Vasitn) | Gate Threshold Voltage 2.0| | 4.0 V_ | Vos=Ves, lb=250puA less | Gate-Source Leakage Forward | | 100 | nA | Ves=20V lgss_ | Gate-Source Leakage Reverse |} |-100} nA | Vegs=-20V loss Zero Gate Voltage | | 260 | pA | Vos=Max. Rating, Vas=OV Drain Current j| |1000] yA | Vos=Max. RatingX0.8, Ves=OV, To=125C On-State Drain-Source Current (2) IRF820 2.5) A > = IDyon) IRFB21 Vps210V, Vas=10V IRF822 . _ _ A IRF823 2.0 ' Static Drain-Source On-State Resistance (2) : Roston) | [RF820 |2.6] 3.0 Q | Veg=10V, lp=1.4A IRF821 IRF822 _ . . Q IRF823 3.0) 4.0 Ots Forward Transconductance (2) 1.56/23) U | Vos210V, lp=1.4A Ciss input Capacitance |390; pF Coss | Output Capacitance | 52 - pF | Vas=OV, Vos=25V, f=1.0MHz Crss_ | Reverse Transfer Capacitance | 22 - pF taton) | Turn-On Delay Time |10) 15 ns Vpp=0.5BVpss, Ip=2.5A, Zg=182 tr _| Rise Time | 12 | 18 | M8 | (MOSFET switching times are essentially tao) | Turn-Off Delay Time |28] 42 ns | independent of operating temperature) tt Fall Time ; 12 18 ns Total Gate Charge |13] 19 | nce Qa (Gate-Source Plus Gate-Drain) Ves=10V, Ip=2.5A, Vogs=0.8 Max. Rating Qg:_| Gate-Source Charge |22/ 33] ac (Gate charge is essentially independent of operating temperature.} Qga_ | Gate-Drain (Miller) Charge | 68] 10 nc THERMAL RESISTANCE Symbol Characteristic IRF820-3 Unit Rime Junction-to-Case MAX 2.5 K/Ww , Mounting surface flat -to-Sink . K/W . Rincs Case-to-Sin TYP 0.5 / smooth, and greased Rthua Junction-to-Ambient | MAX 80 K/W | Free Air Operation Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature & SAMSUNG 205IRF820/821/822/823 N-CHANNEL POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min| Typ | Max |Units Test Conditions Continuous Source Current (Body Diode) Is IRF820 -;-/ 25 A IRF821 IRF822 _|_ lee A {RF823 , Modified MOSFET symbol o Pulse Source Current(Body Diode}(3) Showing the integral =| g ism | IRF820 . | | 80 A reverse P-N junction rectifier 8 IRF821 IRF822 -|- . A IRF823 7.0 Diode Forward Voltage (2) Vsp_ | IRF820 |;, 16 v Tco=25C, Is=2.5A, Veg=OV IRF821 IRF822 . = =?2. A, Vac= IRF823 1.5 Vv Tc=25C, Is 2 Gs=O0V trr Reverse Recovery Time |270) 540] ns | Tj=25C, Ir=2.5A, die/dt=100A/pS Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse with limited by max. junction temperature Ves= 10 Pulse Tast Ip, DRAIN CURRENT (AMPERES) Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typicai Output Characteristics Ip, DRAIN CURRENT (AMPERES) 804s Pulse Test 4 1 Vos, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Transfer Characteristics & SAMSUNG 206 b7E D MM 7964142 00147313 723 MESNGk SAMSUNG ELECTRONICS INCL7E D MM 7964142 0017314 EET MSMGK SAMSUNG ELECTRONICS INC IRF820/821/822/823 Ves=10V Pulse Test Ves=5 SV Ip, DRAIN CURRENT (AMPERES) Vas =5V Vas=4.5V Ves=4V 0 4 8 12 16 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics 0.2 SINGLE PULSE (TRANSIENT oO THERMAL, THERMAL IMPEDANCE (PER UNIT) 0.02 ZnsctRinac, NORMALIZED EFFECTIVE TRANSIENT 0.01 1 Maximum Effective Tr 80ys Pulse Vos toon % Rosion max gts, TRANSCONDUCTANCE (SIEMENS) 4 Ip, DRAIN CURRENT (AMPERES) Typical Transconductance Vs. Drain Current 20 1, SQUARE WAVE PULSE ient Thermal ! Ip, DRAIN CURRENT (AMPERES) Ibn, REVERSE ORAIN CURRENT (AMPERES) DURATION (SECO! dd: 1] + N-CHANNEL POWER MOSFETS - 1 tt OPERATION IN THIS AREA IS LIMITED BY 4 | To = 28C T,= 150C MAX Rinse = 1.67 SINGLE PULSE 1Oms Ooms 2 5 16 20 0 100 200 500 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Maximum Safe Operating Area ro 1 Duty Factor. Dat 2 Per Unit Base=Rag=3 12 Deg C 3 Ta Te=Pom Zev {th NDS) - to-Case Vs. Pulse Duration T= 150C Ty=26C Vso, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical SourceDrain Diode Forward Voltage & SAMSUNG 207IRF820/821/822/823 1 (NORMALIZED) 2 Rosion), ORAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) BVoss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE 9 80, 1 Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature 1000 Ves=0 f=1MHz 800 Ciss=Cgs+Cgd, Cds SHORTED Crss=Cgd : Cgs Cgd Cgs+Cgd +Cgd Coss=Cds +. , CAPACITANCE (pF) 200 Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) 0 10 50 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Capacitance Vs. Drain to Source Voltage 11 Boston CURRENT PULSE OF 2.0ys DURATION. T#25C, (HEATING EFFECT OF PULSE IS Rosjon), ORAIN-TO-SOURCE ON RESISTANCE (OHMS) ip, ORAIN CURRENT (AMPERES) 4 18 Ip, DRAIN CURRENT (AMPERES) Typical On-Resistance Vs. Drain Current 20 15 2) 0.5 N-CHANNEL POWER MOSFETS Ves 10V o 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Normalized On-Resistance Vs. Temperature =100V Vos = 250V: : i Vos = 400V 0 4 12 16 20 Qg, TOTAL GATE CHARGE (nC) Typical Gate Charge Vs. Gate-To-Source Voltage 25 50 100 125 450 Ta, AMBIENT TEMPERATURE (C) Maximum Drain Current Vs. Case Temperature SAMSUNG 208 b7E D MM 75964442 0017315 STb MSMNGK SAMSUNG ELECTRONICS INCSAMSUNG ELECTRONICS INC IRF820/821/822/823 b7E D MM 7964142 0017316 432 MSMGK N-CHANNEL POWER MOSFETS PN) 35 | 28,--__.-_- tT I i | | 4 Pp, POWER DISSIPATION (WATTS) | | ; 21 py foe to : \ i ! | i | pont 7 40 Tc, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve 60 80 100, 120 140-160 & SAMSUNG 209