ZXMS6001N3
Document number: DS33603 Rev. 2 - 2
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ZXMS6001N3
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
IntelliFET MOSFET
Product Summary
Continuous Drain Source Voltage: VDS = 60V
On-State Resistance: 675mΩ
Max Nominal Load Current (VIN = 5V): 1.1A
Min Nominal Load Current (VIN = 5V): 0.7A
Clamping Energy: 550mJ
Description
The ZXMS6001N3 is a low input current, self-protected, low-side
IntelliFET™ MOSFET intended for VIN = 5V applications. It features
monolithic overtemperature, overcurrent, overvoltage (active clamp)
and ESD-protected logic-level functionality. It is intended as a general
purpose switch.
Applications
Especially Suited for Loads with a High Inrush Current, Such as
Lamps and Motors
All Types of Resistive, Inductive, and Capacitive Loads in
Switching Applications
µC Compatible Power Switch for 12V and 24V DC Applications
Automotive Rated
Replaces Electromechanical Relays and Discrete Circuits
Linear Mode Capability: Current-Limiting Protection Circuitry is
Designed to Deactivate at Low VDS to Minimize On-State Power
Dissipation. Maximum DC Operating Current is Determined by
Thermal Capability of Package/Board Combination Rather Than
by Protection Circuitry, Which Does Not Compromise The
Product’s Ability to Self-Protect at Low VDS.
Features and Benefits
Low Input Current
Short-Circuit Protection with Auto Restart
Overvoltage Protection (Active Clamp)
Thermal Shutdown with Auto Restart
Overcurrent Protection
Input Protection (ESD)
Load-Dump Protection (Actively Protects Load)
Lead-Free Finish; RoHS Compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT223 (Type DN)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (Approximate)
(Note 5)
Ordering Information (Note 4)
Part Number
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
ZXMS6001N3TA
7
12
1000 Units
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, see https://www.diodes.com/design/support/packaging/diodes-packaging/.
5. The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is
recommended for best thermal performance.
Top View
SOT223 (Type DN)
Top View
Pin Out
IntelliFET is a trademark of Diodes Incorporated.
e3
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Marking Information
Functional Block Diagram
dV/dt
Limitation
ZXMS6001 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 8 = 2018)
WW or WW = Week Code (01 to 53)
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise stated.)
Characteristic
Symbol
Value
Unit
Continuous Drain-Source Voltage
VDS
60
V
Drain-Source Voltage for Short Circuit Protection VIN = 5V
VDS(SC)
36
V
Continuous Input Voltage
VIN
-0.2 to +10
V
Peak Input Voltage
VIN
-0.2 to +20
V
Continuous Input Current
-0.2V ≤ VIN ≤ 10V
VIN < -0.2V or VIN > 10V
IIN
No Limit
│IIN │≤ 2
mA
Operating Temperature Range
TJ
-40 to +150
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Power Dissipation at TA = +25°C (Note 6)
PD
1.5
W
Power Dissipation at TA = +25°C (Note 8)
PD
0.6
W
Continuous Drain Current @ VIN = 5V; TA = +25°C (Note 6)
ID
1.1
A
Continuous Drain Current @ VIN = 5V; TA = +25°C (Note 8)
ID
0.7
A
Continuous Source Current (Body Diode) (Note 6)
IS
2.0
A
Pulsed Source Current (Body Diode) (Note 7)
IS
3.3
A
Unclamped Single Pulse Inductive Energy
EAS
550
mJ
Load Dump Protection
VLOADDUMP
80
V
Electrostatic Discharge (Human Body Model)
VESD
4000
V
DIN Humidity Category, DIN 40 040
—
E
—
IEC Climatic Category, DIN IEC 68-1
—
40/150/56
—
Thermal Resistance
Characteristic
Symbol
Value
Unit
Junction to Ambient (Note 6)
RϴJA
83
°C/W
Junction to Ambient (Note 7)
RϴJA
45
°C/W
Junction to Ambient (Note 8)
RϴJA
208
°C/W
Recommended Operating Conditions
The ZXMS6001 is optimized for use with µC operating from 5V supplies.
Characteristic
Symbol
Min
Max
Unit
Input Voltage Range
VIN
0
6
V
Ambient Temperature Range
TA
-40
+125
°C
High Level Input Voltage for MOSFET (Note 9)
VIH
4
6
V
Peripheral Supply Voltage (Voltage to which Load is Referred)
VP
—
60
V
Notes: 6. For a device surface mounted on 25mm × 25mm × 1.6mm FR-4 board with a high coverage of single-sided 2oz weight copper. Allocation of 6cm2
copper, 33% to source tab, and 66% to drain pin with source tab and drain pin electrically isolated.
7. For a device surface mounted on FR-4 board as (Note 6) and measured at t ≤10s.
8. For a device surface mounted on FR-4 board with the minimum copper required for electrical connections.
9. Recommended input voltage range over which protection circuits function as specified.
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Electrical Characteristics (@TA = +25°C, unless otherwise stated.)
Characteristic
Symbol
Min
Typ
Max
Unit
Conditions
Static Characteristics
Drain-Source Clamp Voltage
VDS(AZ)
60
70
75
V
ID = 10mA
Off State Drain Current
IDSS
—
0.1
3
µA
VDS = 12V, VIN = 0V
Off State Drain Current
IDSS
—
3
15
µA
VDS = 32V, VIN = 0V
Input Threshold Voltage (Note 10)
VIN(TH)
1
1.8
2.5
V
VDS = VGS, ID = 10mA
Input Current
IIN
—
150
—
µA
VIN = +3V
Input Current
IIN
—
335
500
µA
VIN = +5V, All Circumstances
Static Drain-Source On-State Resistance
RDS(ON)
—
1
2
Ω
VIN = 3V, ID = 0.1A
Static Drain-Source On-State Resistance
RDS(ON)
—
520
675
mΩ
VIN = 5V, ID = 0.7A
Current Limit (Note 11)
ID(LIM)
1
1.8
3
A
VIN = 5V, VDS > 5V
Dynamic Characteristics
Turn-On Time (VIN to 90% ID)
tON
—
27
—
μs
RL = 22Ω, VIN = 0 to 5V, VDD = 12V
Turn-Off Time (VIN to 90% ID)
tOFF
—
26
—
μs
RL = 22Ω, VIN = 5V to 0V,
VDD = 12V
Slew Rate On (70 to 50% VDD)
dVDS/dtON
—
1.4
—
V/μs
RL= 22Ω, VIN = 0 to 5V, VDD = 12V
Slew Rate Off (50 to 70% VDD)
dVDS/dtON
—
1.2
—
V/μs
RL = 22Ω, VIN = 5V to 0V,
VDD = 12V
Protection Functions (Note 12)
Minimum Input Voltage for Over-
Temperature Protection (Note 13)
VPROT(MIN)
—
3.5
4
V
TTRIP > +150°C
Maximum Input Voltage for Over-
Temperature Protection (Note 13)
VPROT(MAX)
6
7
—
V
TTRIP > +150°C
Thermal Overload Trip Temperature
TJT
+150
+175
—
°C
—
Thermal Hysteresis
—
—
+8
—
°C
—
Unclamped Single Pulse Inductive Energy
TJ = +25°C
EAS
550
—
—
mJ
ID(ISO) = 0.7A, VDD = 32V
Unclamped Single Pulse Inductive Energy
TJ = +150°C
EAS
200
—
—
mJ
ID(ISO) = 0.7A, VDD = 32V
Inverse Diode
Source Drain Voltage
VSD
—
—
1
V
VIN = 0V, -ID = 1.4A
Notes: 10. Recommended input voltage range over which protection circuits function as specified.
11. The drain current is limited to a reduced value when VDS exceeds a safe level.
12. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered
as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation.
13. Not subject to production test, specified by design.
ZXMS6001N3
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Application Information
The current-limit protection circuitry is designed to deactivate at low VDS to prevent the load current from unnecessarily restriction during normal
operation. The design max-DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by
the protection circuitry (see Typical Output Characteristic graph). This does not compromise the products ability to self-protect at low VDS.
The overtemperature protection circuit trips at a minimum of +150°C, so the available package dissipation reduces as the maximum required
ambient temperature increases. This leads to the following maximum recommended continuous operating currents.
Minimum Copper Area Characteristics
For minimum copper condition as described in Note 8.
Max Ambient Temperature TA
Maximum Continuous Current VIN = 5V
+25°C at VIN = 5V
720mA
+70°C at VIN = 5V
575mA
+85°C at VIN = 5V
520mA
+125°C at VIN = 5V
320mA
See Note 8
TA=25°C
TA=25°C
TA=25°C
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Large Copper Area Characteristics
For large copper area as described in Note 6.
Max Ambient Temperature TA
Maximum Continuous Current VIN = 5V
+25°C at VIN = 5V
1140mA
+70°C at VIN = 5V
915mA
+85°C at VIN = 5V
825mA
+125°C at VIN = 5V
510mA
See Note 6
TA=25°C
TA=25°C
TA=25°C
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TJ=25°C
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT223 (Type DN)
SOT223 (Type DN)
Dim
Min
Max
Typ
A
--
1.70
--
A1
0.01
0.15
--
A2
1.50
1.68
1.60
b
0.60
0.80
0.70
b2
2.90
3.10
--
c
0.20
0.32
--
D
6.30
6.70
--
E
6.70
7.30
--
E1
3.30
3.70
--
e
--
--
2.30
e1
--
--
4.60
L
0.85
--
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT223 (Type DN)
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
A1
A
D
b
e1
e
b2
A2
C
E
L
E1
0.25
Seating
Plane
Gauge
Plane
X1
Y1
Y
XC
C1 Y2
ZXMS6001N3
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ZXMS6001N3
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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1. are intended to implant into the body, or
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