PROGRAMMABLE THRESHOLD COUPLER ISOLATION | CURRENT TYPICAL rion VOLTAGE (Vpy)| TRANSFER USEC.) Vee Isat) . MIN. RATIO MIN. Tr Tr . H11A10 1500 a 2 2 GE TYPE AC INPUT COUPLER H11AA1 H11AA2 HIGH VOLTAGE COUPLER 2500 1500 1500 1500 1500 1775 Vas PHOTO DARLINGTON OUTPUT H11B1 2500 H11B2 1500 H11B3 1500 H11B255 1500 H15B1 4000 Vams H15B2 4000 Vams 4N29 2500 4N29A 1775 Vrms 4N30 1500 4N31 1500 4N32 2500 4N33 4N32A 1775 Vans 1500 PHOTO SCR OUTPUT ISOLATION | If TRIGGER] tp 100C | BLOCKING TYPICAL GE TYPE VOLTAGE MIN. ) | (MAX.) uA | VOLTAGE (MIN.)| TON @sec.) | YF (MAX) PHOTON COUPLED INTERRUPTER MODULE PAGE BVEco TYPICAL Vce(sat) Ip (nA NO. OUTPUT CURRENT p (nA) (Vv) [TON GSEQ) [ty (SEC) MAX, H13A1 Ip = 20mA 200uA 30 : H13A2 Tr = 20mA SOKA 30 H13B1 Ir = 20mA 2500HA 25 H13B2 IF = 20mA 1000HA 25 GE TYPE MATCHED EMITTER DETECTOR PAIRS 129Photon Coupled Isolator H11C1-H11C2-H11C3 Ga As Infrared Emitting Diode & Light Activated SCR The General Electric H11C1, H11C2 and H11C3 are gallium Agee muy ha NOTE arsenide, infrared emitting diodes coupled with light activated sil- 1 wore |B | 30 349 ree ess : 5 icon controlled rectifiers in a dual in-line package. a To po TT es zed vo Poel 4 absolute maximum ratings: (25C) TT Ng [erorwew L nS ses ere) s INFRARED EMITTING DIODE rhe cde Monel (lef ] a J Pp 375 9.83 Power Dissipation *100 milliwatts tt aoe | & [obey basher [2 Forward Current (Continuous) 60 milliamps TL see tl FA] eran ssune atone no Forward Current (Peak) 3 ampere 204 pos PANE i \- | a EL pontan tod cater (Pulse width 1 usec 300 P Ps) sok Los 4 ct, a Tree neurone ose trom the sen Reverse Voltage 6 volts 6.Four places. *Derate 1.33 mW/C above -25C ambient. TOTAL DEVICE Storage Temperature -55 to 150C PHOTO-SCR OTO-SC Operating Temperature -55 to 100C Peak Forward Voltage 200 volts Lead Soldering Time (at 260C) 10 seconds RMS Forward Current 300 milliamps Surge Isolation Voltage (Input to Output). Forward Current (Peak) 10 amperes H11C1 2500V (peak) 1770V as) (L00usec 1% duty cycle) H11C2 2100V (peak) 1480V ems) Surge Current (10m sec) 5 amperes H11C3 1500V (peak) 1060V(pMs) Reverse Gate Voltage 5 6 volts Steady-State Isolation Voltage (Input to Output). Power Dissipation (25C Ambient) ** 400 milliwatts H11C1 1500V (peak) 1060V pms) Power Dissipation (25C Case) ***1000 milliwatts H11C2 1260V peak) 890Vems) **Derate 5.3mW/C above 25C ambient. #4*Derate amwree above 28C case. H11C3 950V (peak) 660V rms) individual electrical characteristics (25C) INFRARED EMITTING DIODE | typ. | MAX. UNITS PHOTO-SCR MIN.| TYP.|MAX.] UNITS Forward Voltage Vv 1.2 1.5 | volts Peak Off-State Voltage V 200} | |volts 8g F 8 DM (Ip = 10mA) (Rgx = 10KQ, 100C) Peak Reverse Voltage Vam 200] |voits (Rex = 10K, 100C) Reverse Current Ip 10 | microamps On-State Voltage Vim ~ | 11 | 1.3 Jvolts WV. =3V) (Inq = 3 amp) R Off-State Current Ipm - | - 50 | microamps (Vpm = 200V, Ta = 100C) Reverse Current Ipw _ 50 | microamps (Vem = 200V, Ta = 100C) Capacitance Cy 50 _ picofarads Capacitance (Anode-Gate) _ 20| |picofarads (V = 0,f = 1MHz) V=O0V,f=1MHz(Gate-Cathode) |350] |picofarads coupled electrical characteristics (25C) MIN. | TYP. | MAX. UNITS Input Current to Trigger (Vax = 50V, Rox = LOKQ) H11C1, C2 20 milliamps Hi1C3 _ _ 30 milliamps Input Current to Trigger (Vax = 100V, Rex = 27KQ2) H11C1, C2 - = 11 milliamps H11C3 14 milliamps Isolation Resistance (Input to Output Voltage = 500Vpc) 100 - gigaohms Input to Output Capacitance (Input to Output Voltage = O,f = 1MHz) _ 2 picofarads Coupled dV/dt, Input to Output (See Figure 13) 1299 500 = = volts/usecTYPICAL CHARACTERISTICS | H11C1, H11C2, H11C3 NORMALIZED TO Vay #504 Rg, t 10K Ts 728% Tp NORMALIZED INPUT CURRENT TO TRIGGER Ip NORMALIZED INPUT CURRENT TO TRIGGER NORMALIZED TO 1 5 10 50 100-200 Vak #50V Vay ANODE TO CATHODE VOLTAGE-WoLTS RgK = 10K Ta = 25C ~ " ~60 -40 -20 20 40 60 ao (oo 120 FIGURE 1. INPUT CURRENT TO TRIGGER Tq AMBIENT TEMPERATURE C VS ANODE-CATHODE VOLTAGE FIGURE 2. INPUT CURRENT TO TRIGGER VS TEMPERATURE NORMALIZED TO Vaw 50V Rey 210K Ta *25C SOTH PERCENTILE ler MORMALIZEO INPUT CURRENT TO TRIGGER Tey"NORMALIZED INPUT CURRENT TO TRIGGER 4 U 2 4 6810 20 40 6G 100 200 400 (edo PULSE WIDTH - MICRO SECONDS FIGURE 4. INPUT CURRENT TO TRIGGER VS PULSE WIDTH -40 +20 Ty AMBIENT TEMPERATURE -*C FIGURE 3. INPUT CURRENT TO TRIGGER DISTRIBUTION VS TEMPERATURE Yak * SOVOLTS Yon tig + tr ty sel jasec Tp-FORWARD CURRENT -MiLLIAMPERES -TURN ON TIME MICROSECONOS ton Os lo 20 30 Vp FORWARD VOLTAGE-VOLTS FIGURE 6, INPUT CHARACTERISTICS FIGURE 5. TURN ON TIME VS INPUT CURRENT ip VS Ve 1300 Io 20 40 50 60 7 ao 90 100 1p -INPUT CURRENT - MILLIAMPERESTYPICAL CHARACTERISTICS OF OUTPUT (SCR) [411C1, H11C2, H11C3 | NOTE: (1}LEAD TEMPERATURE MEASURED AT THE WIDEST PORTION ol F THE SCR ANODE LEAD (2) AMBIENT TEMPERATURE MEASURED AT A POINT 72" FROM THE DEVICE YUNCTION TO AMBIENT Rex = 300 TRANSIENT THERMAL IMPEDANCE -*C PER WATT I 999), 502 0.004 OO| O02 G04 OF O02 04 I 2 4 0 20 40 wo TIME-SECONDOS SK Ty- HOLDING CURRENT - MICROAMPERES FIGURE 8. MAXIMUM TRANSIENT THERMAL - IMPEDANCE Vax 50V ~40 -20 3 20 40 60 80 100 Ts ~ AMBIENT TEMPERATURE-C FIGURE 7. HOLDING CURRENT VS TEMPERATURE NORMALIZED TO Vax *S0V Ty 725C 1000 LEAD TEMP Dc CURRENT AMBIENT TEMP HALF-SINE N\ MAXIMUM ALLOWABLE TEMPERATURE - C \N AMB TEMP LEAD TEMP DC CURRENT (72 SINE WAVE AVERAGE Tp" NORMALIZED FORWARD CURRENT, OFF STATE 0.4 06 08 ON STATE CURRENT - AMPERES FIGURE 10. ON STATE CURRENT #5 -awoice Tewerarunse VS MAXIMUM ALLOWABLE TEMPERATURE FIGURE 9. OFF STATE FORWARD CURRENT VS TEMPERATURE JUNCTION TEMPERATURE = 25C JUNCTION TEMPERATURE? 100C AV/gy CRITICAL RATE OF RISE APPLIED FORWARD VOLTAGE - Voits/u sec oS 17 ON-STATE CURRENT AMPERES INCREASES TO FORWARD T, S6K 10 20 3.0 40 V,~ON-STATE VOLTAGE ~- VOLTS FIGURE 12. ON-STATE FIGURE 11. dV/qg, VS TEMPERATURE 1301 CHARACTERISTICS Ta AMBIENT TEMPERATURE -C.H11C1, H11C2, H11C3 | TYPICAL APPLICATIONS 10A, T2L COMPATABLE, SOLID STATE RELAY Lesa O.laF "CONTACT" x Jad SCI468 3472 120V Ac Use of the HI1Ct for high sensitivity, 2500 v isolation capability, provides this highly reliable solid state relay design. This design is compatable with 74, 74S and 74H series T2L logic systems inputs and 120VAC loads up to 10 A. oT 2308(4) INDICATOR 25W LOGIC [INDICATOR LAMP DRIVER ve The high surge capability and non-reactive input characteristics of the H11C allow it to directly couple, without buffers, T2L and DTL logic to indicator and alarm devices, without danger of introducing noise and logic glitches. 200V SYMMETRICAL TRANSISTOR COUPLER Use of the high voltage PNP portion of the H11C provides a 200V transistor capable of conducting positive and negative signals with current transfer ratios of over 1%. This function is useful in remote instrumentation, high voltage power supplys and test equipment. Care should be taken not to exceed the H11C 400 mW power dissipation rating when used at high voltages. FIGURE 13 COUPLED dV/dt TEST CIRCUIT Vp = 800 Volts ty =.010 Seconds f = 25 Hertz + 100 VAC TA =25C ~4 Et + 7 H Vp Lf TS & _ + lo a tp L. dV/dt EXPONENTIAL j_ OSCILLOSCOPE RAMP GEN. 1302