FSS13A0R3 - Intersil Corporation - Datasheet.Directory

File Number 4487.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

FSS13A0D, FSS13A0R

2A, 100V, 0.170 Ohm, Rad Hard, SEGR

Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs

speciﬁcally designed for commercial and military space

applications. Enhanced Power MOSFET immunity to Single

Event Effects (SEE), Single Event Gate Rupture (SEGR) in

particular, is combined with 100K RADS of total dose

hardness to provide devices which are ideally suited to harsh

space environments. The dose rate and neutron tolerance

necessary for military applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Formerly available as type TA17696.

Features

• 12A, 100V, rDS(ON) = 0.170Ω

• Total Dose

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm2 with

VDS up to 80% of Rated Breakdown and

VGS of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS

- Typically Survives 2E12 if Current Limited to IDM

• Photo Current

- 1.5nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm2

- Usable to 3E14 Neutrons/cm2

Symbol

Packaging TO-257AA

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K Commercial FSS13A0D1

10K TXV FSS13A0D3

100K Commercial FSS13A0R1

100K TXV FSS13A0R3

100K Space FSS13A0R4

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

Data Sheet June 2000

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

FSS13A0D, FSS13A0R UNITS

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DS 100 V

Drain to Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 100 V

Continuous Drain Current

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID12 A

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID9A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

DM 36 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

GS ±20 V

Maximum Power Dissipation

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT56 W

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT22 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS 36 A

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS12 A

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 36 A

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

(Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V 100 - - V

Gate Threshold Voltage VGS(TH) VGS = VDS,

ID = 1mA TC = -55oC - - 5.0 V

TC = 25oC 1.5 - 4.0 V

TC = 125oC 0.5 - - V

Zero Gate Voltage Drain Current IDSS VDS = 80V,

VGS = 0V TC = 25oC--25µA

TC = 125oC - - 250 µA

Gate to Source Leakage Current IGSS VGS = ±20V TC = 25oC - - 100 nA

TC = 125oC - - 200 nA

Drain to Source On-State Voltage VDS(ON) VGS = 12V, ID = 12A - - 2.32 V

Drain to Source On Resistance rDS(ON)12 ID = 9A,

VGS = 12V TC = 25oC - 0.100 0.170 Ω

TC = 125oC - - 0.289 Ω

Turn-On Delay Time td(ON) VDD = 50V, ID = 12A,

RL = 4.17Ω, VGS = 12V,

RGS = 7.5Ω

- - 20 ns

Rise Time tr- - 75 ns

Turn-Off Delay Time td(OFF) - - 45 ns

Fall Time tf- - 25 ns

Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 50V,

ID = 12A - - 61 nC

Gate Charge at 12V Qg(12) VGS = 0V to 12V - 35 42 nC

Threshold Gate Charge Qg(TH) VGS = 0V to 2V - - - nC

Gate Charge Source Qgs - 6.8 8.3 nC

Gate Charge Drain Qgd -2022nC

Plateau Voltage V(PLATEAU) ID = 12A, VDS = 15V - 8 - V

Input Capacitance CISS VDS = 25V, VGS = 0V,

f = 1MHz - 760 - pF

Output Capacitance COSS - 310 - pF

Reverse Transfer Capacitance CRSS - 110 - pF

Thermal Resistance Junction to Case RθJC - - 2.2 oC/W

Thermal Resistance Junction to Ambient RθJA --60

oC/W

FSS13A0D, FSS13A0R

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage VSD ISD = 12A 0.6 - 1.8 V

Reverse Recovery Time trr ISD = 12A, dISD/dt = 100A/µs - - 280 ns

Electrical Speciﬁcations up to 100K RAD TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown Volts (Note 3) BVDSS VGS = 0, ID = 1mA 100 - V

Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA 1.5 4.0 V

Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±20V, VDS = 0V - 100 nA

Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = 80V - 25 µA

Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = 12V, ID = 12A - 2.32 V

Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = 12V, ID = 9A - 0.170 Ω

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.

Single Event Effects (SEB, SEGR) Note 4

TEST SYMBOL

ENVIRONMENT (NOTE 5) APPLIED

VGS BIAS

(V)

(NOTE 6)

MAXIMUM

VDS BIAS (V)

ION

SPECIES TYPICAL LET

(MeV/mg/cm) TYPICAL

RANGE (µ)

Single Event Effects Safe Operating Area SEESOA Ni 26 43 -20 100

Br 37 36 -10 100

Br 37 36 -15 80

Br 37 36 -20 50

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

GAMMA DOT CURRENT TO IAS

120

100

00 -10 -15 -20 -25-5 VGS (V)

VDS (V)

LET = 37MeV/mg/cm2, RANGE = 36µ

LET = 26MeV/mg/cm2, RANGE = 43µ

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

TEMP = 25oC

30010010

LIMITING INDUCTANCE (HENRY)

DRAIN SUPPLY (V)

1000

ILM = 10A

300A

1E-4

1E-5

1E-6

100A

30A

1E-7

1E-3

FSS13A0D, FSS13A0R

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. BASIC GATE CHARGE WAVEFORM FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION

TEMPERATURE

FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

ID, DRAIN (A)

150100500-50

TC, CASE TEMPERATURE (oC)

16 100

0.1

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

10 100

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

100ms

10ms

100ms

1ms

TC = 25oC

300

CHARGE

QGD

QGS

12V

2.5

2.0

1.5

1.0

0.5

0.0-80 -40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED rDS(ON)

PULSE DURATION = 250ms, VGS = 12V, ID = 9A

NORMALIZED THERMAL RESPONSE (ZθJC)

t, RECTANGULAR PULSE DURATION (s)

10-5 10-4 10-3 10-2 10-1 100101

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

0.5

10-3

10-2

10-1

100

101

PDM

t1t2

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC + TC

FSS13A0D, FSS13A0R

FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING

Test Circuits and Waveforms

FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS

FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

0.01 0.1 1

tAV, TIME IN AVALANCHE (ms)

IAS, AVALANCHE CURRENT (A)

tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]

tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)

IF R = 0

STARTING TJ = 150oC

STARTING TJ = 25oC

IF R ≠ 0

VGS ≤ 20V

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

50Ω

50V-150V

IAS

ELECTRONIC SWITCH OPENS

WHEN IAS IS REACHED

CURRENT

TRANSFORMER

VDD

VDS

BVDSS

IAS

tAV

VDS

DUT

RGS

VGS = 12V

VDD

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%50%

10% PULSE WIDTH

VGS

tON

FSS13A0D, FSS13A0R

Screening Information

Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).

Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MAX UNITS

Gate to Source Leakage Current IGSS VGS = ±20V ±20 (Note 7) nA

Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value ±25 (Note 7) µA

Drain to Source On Resistance rDS(ON) TC = 25oC at Rated ID±20% (Note 8) Ω

Gate Threshold Voltage VGS(TH) ID = 1.0mA ±20% (Note 8) V

NOTES:

7. Or 100% of Initial Reading (whichever is greater).

8. Of Initial Reading.

Screening Information

TEST JANTXV EQUIVALENT JANS EQUIVALENT

Gate Stress VGS = 30V, t = 250µsV

GS = 30V, t = 250µs

Pind Optional Required

Pre Burn-In Tests (Note 9) MIL-S-19500 Group A,

Subgroup 2 (All Static Tests at 25oC) MIL-S-19500 Group A,

Subgroup 2 (All Static Tests at 25oC)

Steady State Gate

Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B

VGS = 80% of Rated Value,

TA = 150oC, Time = 48 hours

MIL-STD-750, Method 1042, Condition B

VGS = 80% of Rated Value,

TA = 150oC, Time = 48 hours

Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests

and Limits Table All Delta Parameters Listed in the Delta Tests

and Limits Table

Steady State Reverse

Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A

VDS = 80% of Rated Value,

TA = 150oC, Time = 160 hours

MIL-STD-750, Method 1042, Condition A

VDS = 80% of Rated Value,

TA = 150oC, Time = 240 hours

PDA 10% 5%

Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroup 2 MIL-S-19500, Group A,

Subgroups 2 and 3

NOTE:

9. Test limits are identical pre and post burn-in.

Additional Screening Tests

PARAMETER SYMBOL TEST CONDITIONS MAX UNITS

Safe Operating Area SOA VDS = 80V, t = 10ms 1.6 A

Unclamped Inductive Switching IAS VGS(PEAK) = 15V, L = 0.1mH 36 A

Thermal Response ∆VSD tH = 100ms; VH = 25V; IH = 1A 85 mV

Thermal Impedance ∆VSD tH = 500ms; VH = 25V; IH = 1A 125 mV

FSS13A0D, FSS13A0R

Rad Hard Data Packages - Intersil Power Transistors

TXV Equivalent

1. RAD HARD TXV EQUIVALENT - STANDARD DATA

PACKAGE

A. Certificate of Compliance

B. Assembly Flow Chart

C. Preconditioning - Attributes Data Sheet

D. Group A - Attributes Data Sheet

E. Group B - Attributes Data Sheet

F. Group C - Attributes Data Sheet

G. Group D - Attributes Data Sheet

2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA

PACKAGE

A. Certificate of Compliance

B. Assembly Flow Chart

C. Preconditioning - Attributes Data Sheet

- Pre and Post Burn-In Read and Record

Data

D. Group A - Attributes Data Sheet

E. Group B - Attributes Data Sheet

- Pre and Post Read and Record Data for

Intermittent Operating Life (Subgroup B3)

- Bond Strength Data (Subgroup B3)

- Pre and Post High Temperature Operating

Life Read and Record Data (Subgroup B6)

F. Group C - Attributes Data Sheet

- Pre and P ost Read and Record Data for

Intermittent Operating Life (Subgroup C6)

- Bond Strength Data (Subgroup C6)

G. Group D - Attributes Data Sheet

- Pre and P ost RAD Read and Record Data

Class S - Equivalents

1. RAD HARD “S” EQUIVALENT - STANDARD DATA

PACKAGE

A. Certificate of Compliance

B. Serialization Records

C. Assembly Flow Chart

D. SEM Photos and Report

E. Preconditioning - Attributes Data Sheet

- HTRB - Hi Temp Gate Stress Post

Reverse Bias Data and Delta Data

- HTRB - Hi Temp Drain Stress Post

Reverse Bias Delta Data

F. Group A - Attributes Data Sheet

G. Group B - Attributes Data Sheet

H. Group C - Attributes Data Sheet

I. Group D - Attributes Data Sheet

2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL

DATA PACKAGE

A. Certificate of Compliance

B. Serialization Records

C. Assembly Flow Chart

D. SEM Photos and Report

E. Preconditioning - Attributes Data Sheet

- HTRB - Hi Temp Gate Stress Post

Reverse Bias Data and Delta Data

- HTRB - Hi Temp Drain Stress Post

Reverse Bias Delta Data

- X-Ray and X-Ray Report

F. Group A - Attributes Data Sheet

- Subgroups A2, A3, A4, A5 and A7 Data

G. Group B - Attributes Data Sheet

- Subgroups B1, B3, B4, B5 and B6 Data

H. Group C - Attributes Data Sheet

- Subgroups C1, C2, C3 and C6 Data

I. Group D - Attributes Data Sheet

- Pre and Post Radiation Data

FSS13A0D, FSS13A0R

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

Sales Ofﬁce Headquarters

NORTH AMERICA

Intersil Corporation

P. O. Box 883, Mail Stop 53-204

Melbourne, FL 32902

TEL: (321) 724-7000

FAX: (321) 724-7240

EUROPE

Intersil SA

Mercure Center

100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111

FAX: (32) 2.724.22.05

ASIA

Intersil Ltd.

8F-2, 96, Sec. 1, Chien-kuo North,

Taipei, Taiwan 104

Republic of China

TEL: 886-2-2515-8508

FAX: 886-2-2515-8369

FSS13A0D, FSS13A0R

TO-257AA

3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE

Øb

0.065 R TYP.

ØP

L1Øb1

123

SYMBOL

INCHES MILLIMETERS

NOTESMIN MAX MIN MAX

A 0.190 0.200 4.83 5.08 -

A10.035 0.045 0.89 1.14 -

Øb 0.025 0.035 0.64 0.88 2, 3

Øb10.060 0.090 1.53 2.28 -

D 0.645 0.665 16.39 16.89 -

E 0.410 0.420 10.42 10.66 -

e 0.100 TYP 2.54 TYP 4

e10.200 BSC 5.08 BSC 4

H10.230 0.250 5.85 6.35 -

J10.110 0.130 2.80 3.30 4

L 0.600 0.650 15.24 16.51 -

L1- 0.035 - 0.88 -

ØP 0.140 0.150 3.56 3.81 -

Q 0.113 0.133 2.88 3.37 -

NOTES:

1. These dimensions are within allowable dimensions of Rev. B of

JEDEC TO-257AA dated 9-88.

2. Add typically 0.002 inches (0.05mm) for solder coating.

3. Lead dimension (without solder).

4. Positionofleadtobemeasured0.150inches(3.81mm)frombottom

of dimension D.

5. Die to base BeO isolated, terminals to case ceramic isolated.

6. Controlling dimension: Inch.

7. Revision 1 dated 1-93.

WARNING!

BERYLLIA WARNING PER MIL-S-19500

Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation

which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be

subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ compounds.