3875081 G & SOLID STATE Q1E 17200 D T- $3-"5 High-voltage Power transistors Ol DE 3875081 0017200 1 2N6542, 2N6544, 2N6545, 2N6546 File Number 1096 3-, 5-, and 10-A Power-Switching Transistors High-Voltage N-P-N Type for Off-Line Power Supplies and Other High-Voltage Switching Applications Features: m 100% High Temperature Tested for 100C Parameters a Fast Switching Speed High voltage rating Voex = 360 Vv = 450 V [2N6545] Low Vcelsat] at [(C = 3-, 5-, and 10-A Applications: = Off-Line Power Supplies @ High Voitage Inverters = Switching Regulators TERMINAL DESIGNATIONS The RCA-2N6542, 2N6544, 2N6545, and 2N6546 series of silicon n-p-n power transistors feature high-voltage capa- bility, fast switching speeds, and low saturation voltages, (FLANGE? together with high safe-operating area (SOA) ratings. They EN are specially designed for off-line power supplies, conver- ter circuits and pulse-width-modulated regulators. These high-voltage, high-speed transistors are 100-percent tested for parameters that are essential to the design of high-pow- er switching circuits. Switching times, including inductive turn-off time, and saturation voltages are characterized at 100C; as well as at 25C, to provide information necessary for worst-case design. The 2N6542, 2N6544, 2N6545, and 2N6546 transistors are supplied in steel JEDEC TO-204AA hermetic packages. 92CS-27516 JEDEC TO-204AA MAXIMUM RATINGS, Absolute-Maximum Values: 2N6542 2N6544 2N6545 2N6546 Voev Ver = 1S V ccc cece cece cree nen e ee ce teen e ones 650 650 850 650 Vv *Vcex (Clamped) Vee = 1.5 V cece ccc cece ree een ee ene recente 350 350 450 350 Vv 300 300 400 300 v 8 Vv 3 5 5 10 A 5 8 8 15 A 10 16 16 30 A 5 8 8 10 A To Up to 25C cece cee cence eee tceceeeters 100 125 125 175 Ww Tc above 25C, derate linearly 0.57 0.714 0.714 1 W/C *Taig, Tu cece cer ce eset econ cate enee renee tes eeeeiene _ -65 to 200 C Tr At distance = 1/8 in. (3.17 mm) from seating plane for 5 S MAX.......... ees e eee _ 275 C * In accordance with JEDEG registration data. 202 2K ane 3875081 G E SOLID STATE Ol DE 3475081 OO17201 3 ELECTRICAL CHARACTERISTICS Tc = 25C T-33-18 High-Voltage Power Transistors 2N6542, 2N6544, 2N6545, 2N6546 CHARACTERISTIC TEST CONDITIONS LIMITS VOLTAGE Vde CURRENT Adc 2N6542 2N6544 2N6545 2N6546 UNITS VcE | VBE Min. Max. IcEV 650 | -1.5 850 | -1.5 0.5 _ 0.5 mA lgB0 VcEo(sus)> 0.18 hFE ga 1.88 5a 2.58 408 5a VBE(sat) ga 58 104 VcE(sat) ga 5a ga 108 158 Ist is ftf= 1 MHz MHz Cobo f = 1 MHz 200 pF tad 0.05 tre8 ts@r9 us treg * tn accordance with JEDEC registration data. 203OL DE Baars 5 - ~ sezse1 GE, soLip, stare Gh DE aarsna) ooavene 5 io TESS 2N6542, 2N6544, 2N6545, 2N6546 ELECTRICAL CHARACTERISTICS Tc = 100C TEST CONDITIONS LIMITS CHARACTERISTIC VOLTAGE | CURRENT UNITS Vde Adc 2N6542 2N6544 2N6545 2N6546 VceE | Vee Ic is Min. | Max. | Min. | Max. } Min. | Max. | Min. | Max. *) ICEV 650 | -1.5 | _ - 25 _ 2.5 - _ - 4 850 | -1.5 = = _ = = = = 2.5 = _ mA *| [CER RBE= 600 650 - - _ _- 3 _ 3 - _ _- 5 850 =_ = = = = _ = = 3 _ - "| vcex(sus)be Voc = 20V - | 268 =_ 350 _ - - _ _ - _ L= 180 pH, Re = 0.05 - _ 4,58 _ _ _ 350 _ 450 _ _ _ Vclamp = Rated v VGEX _ _ ga _ = = = =_ =_ = 850 _ Vclamp = Rated VcEo 100 V ~ | | se] feo} -}-]-;-}-f[r- {tr | ~ | ga} | | | 200] | 300} | - | - ~ | |aweal}]-{[-},-}|- | |] 4200) * | vee(sat) _ | ga loa] -ji4}}|[- ~ fe _ | | 5 1 || fie} }16})-4- | | 108} 2 |-};|,-[,-]|- | | 16 V *| Vce(sat) | | 3 | oe} 2 ~/{/-;]-],-ft-[- | | 58 1 ~|]|]25]}/- }26)- )- | 1108] 2 -|/]-{-|-|- [|= 1) 25 *| tsfig - 5 3 06 | 4 - - {|- |- | +45 5 1 -|-J- 4 | 4 |-- ~|s5]0]2],-[,-|-};-|-}]- !| 15 *| tie -os5!3 oe} los|/]|]-]-!1-]- HS | 5 5 1 |!1jo09}- |os | | - | 5 | 10] 2 -}]~]}-j;-|]-[- [415 "1 Rec - _ -|{- {1475} | 14) | 14 7 - 1 | C/W * In accordance with JEDEC registration data. 8 Pulsed: pulse duration = 300 ys, duty factory < 2%. DCAUTION: The sustaining voltage VCEO(sus) and VCEx(sus Vcc = 20 V, L = 180 wH, Ro = 0.05 Q d Vcs value @ Resistive load, Vcc = 250 V, tp = 100 ys, IB; = -I82 f Inductive load, Vetamp = Rated VCex(sus), 1B = -Ic 9 For switching speed test methods, see Application Note AN-6820. 204 __ ____-. /5, L= 180 wH, Re = 0.05 2, Voc = 20 V ) MUST NOT be measured on a curve tracer.5 1720 3875081 G E SOLID STATE OL De Bs67s0a1 olive a? f oss-is High-Voltage Power Transistors 2N6542, 2N6544, 2N6545, 2N6546 CASE TEMPERATURE (To)225C S(ICURVES MUST BE OERATED LINEARLY 4 eo ie Ee =z i) [4 4 => oO je 6 td 3 Zo ew pete EH fe st pioitetort rs rn 1 | | i & 4 fe 2 4 8 eho 2 4 8 800 COLLECTOR-TO-EMITTER VOLTAGE (VopIV 92CM-30532 Fig. 1 - Maximum operating areas for type 2N6542 (Tc = 25). % FOR SINGLE NONREPETITIVE PULSE TEMPERATURE (Te )* 25C RVES MUST BE DERATEO LINEARLY == WITH COLLECTOR CURRENT (L)-A Veo (MAX. 300 V (2N6544) Voeo (MAX.1 400 V (2N6545) 1 2 4 68 2 4 6 8 2 4 a COLLECTOR-TO-EMITTER VOLTAGE (Vc_g) V 92CM-36202 Fig. 2- Maximum operating areas for type 2N6544 and 2N6545 (Tc = 25C). 2053875081 GE soLtip state Yb DE 3875081 O017204 4 i. T3315 High-Voltage Power Transistors 2N6542, 2N6544, 2N6545, 2N6546 206 Ie (MAX. TEMPERATURE (Tc )#28*C MUST BE DERATED LINEARLY WITH ov 2 4 6 e 4 648 2 4 8 COLLECTOR-TO-EMITTER VOLTAGE (Veg)V $20M-30533 Fig.3- Maximum operating areas for type 2N6546 (Tc = 25) 4 2 g g a w q 2 = z 2 CASE TEMPERATURE (Tel*C 9209-20035 pon OOl puLse WOTH ttpls eo0s-20081. Fig. 4 - Dissipation and !s/ derating curves for Fig. 5 Typical thermal-response characteristics all types. for types 2N6542, 2N6544 and 2N6545.3875081 GE SOLID STATE 1 DE 3875061 GO1l?205 O High-Voltage Power Transistors NORMALIZED TRANSIENT THERMAL, ocol 1 PULSE WIOTH (tp}e = #2CS-30587 Fig. 6 Typical thermal-response characteristics for type 2N6546. TO-EMITTER s3V CASE TEMPERATURE (Tg) = or ' to COLLECTOR CURRENT {Ig)A = szcs-21987 Fig. 8 Typical de beta characteristics for type COLLECTOR - TO-EMITTER VOLTAGE Choe. 1 to (co COLLECTOR CURRENT {Ic)A 9g2$-30385 Fig. 10 Typical de beta characteristics for type N6546, 2N6542, 2N6544, 2N6545, 2N6546 410 COLLECTOR {ecl-A s2cs-30830 Fig. 7 Typical de beta characteristics for type 2N6542. COLLECTOR-TO- EMITTER VOLTAGE {ce)=3 DC FORWARD- CURRENT 1co t to COLLECTOR GURRENT {I> 1-A S2C08-32044 Fig. 9 Typical dc beta characteristics for type 2N6545, SATURATION a Ver (sat}]V 1 10 COLLECTOR CURRENT (IglA so gacs-zggg3rs Fig. 11 Typical collecior-to-emitier saturation voltage as a function of collector current for types 2N6542 and 2N6544. 207 Irss-s. i3875081 GE soLip state 0) DE 93875081 oozed 2 ff, FRB 1S High-Voltage Power Transistors 2N6542, 2N6544, 2N6545, 2N6546 [veg sat}}~V . & oF ro Ot 10 COLLECTOR CURRENT{Ig)-A g2cs-32045 Fig. 12 Typical collactor-to-emitter saturation voltage as a function of collector currant for type 2N6545. BASE-TO-ENITTER SATURATION VOLTAGE [Vge (a0t)] v 4 1 10 COLLECTOR CURRENT {Ic}A = s2csz9984 Fig. 14 Typical base-to-emitier saturation voltage as a function of collector current for types 2N6542 and 2N6544. Wag (son) - Lf 10 COLLECTOR CURRENT(EG)A gaca-sz046 Fig. 16 Typical base-to-emitter saturation voltage as a function of collector current for type 2N6545. 208 Ig? Ie/5 COLLECTOR CURRENT (Ig) A 9205-30386 Fig. 13 Typical collector-to-emitter saturation voltage characteristics for type 2N6546. COLLECTOR -TO-EMITTER VOLTAGE (Vee) 3 w 2 5 3 > 1 0 COLLECTOR CURRENT (I} A y2cs-29985 Fig. 15 Typical base-to-emitter voltage as a function of collector current for types 2N6542 and 2N6544. VOLTAGE (Vogl 3V ( 10. COLLECTOR CURRENT (Ic)-A 9205-32047 Fig. 17 Typical base-to-emitter voltage as a function of collector current for type 2N6545.3875081 G E SOLID state "1 DE 3a7s0a1 no17e07 4 T-33-1S High-voltage roWer Transistors 2N6542, 2N6544, 2N6545, 2N6546 3 = a7 I Se * 3S gg gS a4 g a & BS w ag, A 3 ee ed ee gore 5 yr to Paeiie! 8 3 ra ae y l Ge 3 3 al | 1 2 0 100 COLLECTOR CURRENT(I}A 92zc8-30376 9 COLLECTOR-TO-EMITTER VOLTAGE (Vep)- 9205-29986 Fig. 18 Typical base-to-emitter saturation voltage Fig. 19 Typical output characteristics for types characteristics for type 2N6546. 2N6542 and 2N6544. TEMPERATURE {Tc }* mh CASE TEMPERATURE (Tc)25 COLLECTOR CURRENT {I)~A COLLECTOR CURRENT (I)-A COLLECTOR -TO-EMITTER VOLTAGE (Vcgi V s2cs-az04eAl 19 12 14 COLLECTOR-TO-EMITTER VOLTAGE (Vge) 92CS-30374 Fig. 20 Typical output characteristics for type Fig. 21 Typical output characteristics for type 2N654: 2N6541 CASE TEMPERATURE (Teh te," Igy" ! vec 250 +Tpgtla Vecr2soV veorgse s a I z i - - ar 8 < x S e a STORAGE TIME 9205- 3204981 3 4 8 6 2208-32080R1 COLLECTOR CURRENT {1}A COLLECTOR CURRENT {Tc )-A Fig. 22 Typical saturated switching time Fig. 23 Typical saturated switching time characteristics for type 2N6545. characteristics for type 2N6545. 2093875081 G solip syaTe Ob DE B3875081 oo1720a 4 [> TSBSIS My vUILaYye Cuwe! PINs 2N6542, 2N6544, 2N6545, 2N6546 TEMPERATURE (Te) 100C . #14, Iggt 2A Vee *250 CASE TEMPERATURE {Tc I= TpyttA.Tg.22A Voc" 280 #20 pe STORAGE TIME (ty)ys STORAGE TIME (14), ja -928-3205181 4 5 928-32052RL COLLECTOR CURRENT (Ic}-A Fig, 24 Typical saturated switching time Fig. 25 Typical saturated switching time characteristics for type 2N6545. characteristics for type 2N6545. FREQUENCY (1) = STORAGE TIME (tg]pe c COLLECTOR -T0-BASE VOLTAGE (Veg)V OR EMITTER TO-BASE VOLTAGE(VeniY 92CS~32053RE 9268-32054 Fig. 27 - Typical common-base input or output capacitance characteristics as a function of collector-to-base voltage or emitter- to-base voltage for type 2N6545. Fig. 26 Typical saturated switching time characteristics as a function of case temperature for type 2N6545.