1
Motorola IGBT Device Data
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar T ransistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. It also provides low on–voltage which
results in efficient operation at high current.
•Industry Standard TO–220 Package
•High Speed Eoff: 63
J/A typical at 125°C
•Low On–Voltage – 1.7 V typical at 8.0 A, 125°C
•Robust High Voltage Termination
•ESD Protection Gate–Emitter Zener Diodes
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector–Emitter V oltage VCES 600 Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 600 Vdc
Gate–Emitter Voltage — Continuous VGE ±20 Vdc
Collector Current — Continuous @ TC = 25°C
Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)
IC25
IC90
ICM
26
15
52
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD96
0.77 Watts
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg –55 to 150 °C
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Ambient RθJC
RθJA 1.3
65 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL260 °C
Mounting Torque, 6–32 or M3 screw 10 lbf
S
in (1.13 N
S
m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “W orst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
REV 1
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SEMICONDUCTOR TECHNICAL DATA
IGBT IN TO–220
15 A @ 90°C
26 A @ 25°C
600 VOLTS
VERY LOW
ON–VOLTAGE
CASE 221A–09
STYLE 9
TO–220AB
GCE
C
E
G
Motorola, Inc. 1998
MGP15N60U
2Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown V oltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coef ficient (Positive)
V(BR)CES 600
——
870 —
—
Vdc
mV/°C
Emitter–to–Collector Breakdown V oltage (VGE = 0 Vdc, IEC = 100 mAdc) V(BR)ECS 15 — — Vdc
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
ICES —
——
—10
200
µAdc
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES — — 50 µAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State V oltage
(VGE = 15 Vdc, IC = 4.0 Adc)
(VGE = 15 Vdc, IC = 4.0 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 8.0 Adc)
VCE(on) —
—
—
1.4
1.3
1.7
1.7
—
2.0
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coef ficient (Negative)
VGE(th) 3.0
—5.5
10 7.0
—
Vdc
mV/°C
Forward T ransconductance (VCE = 10 Vdc, IC = 8.0 Adc) gfe —7.0 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 Vdc V 0 Vdc
Cies —806 — pF
Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz
)
Coes —78 —
T ransfer Capacitance
f
=
1
.
0
MHz)
Cres —13 —
SWITCHING CHARACTERISTICS (1)
T urn–On Delay Time
(V 360 Vd I 8 0 Ad
td(on) —35 — ns
Rise T ime (VCC = 360 Vdc, IC = 8.0 Adc,
V 15 Vd L 300 H
tr— 34 —
T urn–Off Delay Time VGE = 15 Vdc, L = 300
m
H,
R
G
= 20 Ω
)
td(off) —105 —
Fall T ime
RG
=
20
Ω)
Energy losses include “tail” tf— 200 —
T urn–Off Switching Loss Eoff —250 —
m
J
T urn–On Delay Time
(V 360 Vd I 8 0 Ad
td(on) —36 — ns
Rise T ime (VCC = 360 Vdc, IC = 8.0 Adc,
V 15 Vd L 300 H
tr— 39 —
T urn–Off Delay Time VGE = 15 Vdc, L = 300
m
H,
R
G
= 20 Ω
,
T
J
= 125°C
)
td(off) —206 —
Fall T ime
RG
=
20
Ω
,
TJ
=
125 C)
Energy losses include “tail” tf— 255 —
T urn–Off Switching Loss Eoff —510 —
m
J
Gate Charge
(V 360 Vdc I 8 0 Adc
QT— 39.2 — nC
(VCC = 360 Vdc, IC = 8.0 Adc,
V
GE
= 15 Vdc
)
Q1—8.7 —
VGE
=
15
Vdc)
Q2— 17.4 —
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad) LE— 7.5 — nH
(1) Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.
MGP15N60U
3
Motorola IGBT Device Data
Figure 1. Output Characteristics Figure 2. Output Characteristics
Figure 3. Transfer Characteristics Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
Figure 5. Capacitance Variation Figure 6. Gate–To–Emitter Voltage versus
Total Charge
680
V
CE, COLLECTOR–T O–EMITTER VOLTAGE (VOLTS)
40
20
35
10
16
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
40
30
20
10
0
TJ, JUNCTION TEMPERATURE (
°
C)
–25–50
1.8
1.7
1.6
1.5
1.4 014
100
VCE, COLLECTOR–T O–EMITTER VOLTAGE (VOLTS)
1200
800
400
0
Qg, TOTAL GATE CHARGE (nC)
100
20
16
12
4
0405
IC, COLLECTOR CURRENT (AMPS)I
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
5
25
0312 45 7
11 12 25 50 10075
C, CAPACITANCE (pF)
20 2515
1600
20 30 50
8
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
15
30
680
V
CE, COLLECTOR–T O–EMITTER VOLTAGE (VOLTS)
40
20
35
10
IC, COLLECTOR CURRENT (AMPS)
5
25
0312 45 7
15
30
125 150151310856 97
, COLLECTOR CURRENT (AMPS)
C
20 V
VGE = 10 V
TJ = 25
°
C
15 V
12.5 V
17.5 V
20 V
VGE = 10 V
TJ = 125
°
C
15 V
12.5 V
17.5 V
VCE = 100 V
5.0
m
S PULSE WIDTH
TJ = 125
°
C25
°
C
IC = 8.0 A
6.0 A
4.0 A
VGE = 15 V
80
m
S PULSE WIDTH
Cies
Coes
Cres
TJ = 25
°
C
VGE = 0 V QT
Q2Q1
TJ = 25
°
C
VCC = 300 V
IC = 8.0 A
MGP15N60U
4Motorola IGBT Device Data
4.0 A
Figure 7. Turn–Off Energy Losses versus
Gate Resistance Figure 8. Turn–Off Energy Losses versus
Junction Temperature
Figure 9. Turn–Off Energy Losses versus
Collector Current Figure 10. Reverse Biased Safe Operating
Area
55
RG, GATE RESISTANCE (OHMS)
0.7
0.6
0.4
IC, COLLECTOR CURRENT (AMPS)
0.4
0.3
0.2
0.1
0
VCE, COLLECTOR–T O–EMITTER VOLTAGE (VOLTS)
1
100
10
1
, TURN–OFF ENERGY LOSSES (mJ)
IC, COLLECTOR CURRENT (AMPS)
0.3
0.2 25515 3545
310 100
0.5
100 150–50
TJ, JUNCTION TEMPERATURE (
°
C)
0.6
0.4
0.2
0.1
0.5
025–25 0 50 75 125
0.3
10004021
0.5
7865
T
J
= 125
°
C
VCC = 360 V
VGE = 15 V
RG = 20
W
TJ = 125
°
C
VGE = 15 V
RG = 20
W
IC = 8.0 A
6.0 A
4.0 A
IC = 8.0 A
6.0 A
TJ = 125
°
C
VDD = 360 V
VGE = 15 V
VCC = 360 V
VGE = 15 V
RG = 20
W
Eoff
, TURN–OFF ENERGY LOSSES (mJ)Eoff
, TURN–OFF ENERGY LOSSES (mJ)Eoff
MGP15N60U
5
Motorola IGBT Device Data
PACKAGE DIMENSIONS
CASE 221A–09
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 ––– 1.15 –––
Z––– 0.080 ––– 2.04
Q
H
Z
L
V
G
N
A
K
123
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
STYLE 9:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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