500mW 100 Volt
Silicon Switching Diode
DL4148
SUGGESTED SOLDER
PAD LAYOUT
Features
• Low Current Leakage
• Compression Bond Construction
• Low Cost
• Surface Mount Applications
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .134 .142 3.40 3.60
B .008 .016 .20 .40
C .055 .059 1.40 1.50
∅
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 35°C/W Junction To Ambient
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage VR75V
Peak Reverse
Voltage VRM 100V
Average Rectified
Current IO150mA Resistive Load
f > 50Hz
Power Dissipation PTOT 500mW
Junction
Temperature TJ 150°C
Peak Forward Surge
Current IFSM
500mA t<1s
Maximum
Instantaneous
Forward Voltage VF
1.0V IFM = 10mA;
TJ = 25°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
5.0µA
50µA
VR=20Volts
TJ=25°C
TJ=150°C
Typical Junction
Capacitance CJ4pF Measured at
1.0MHz, VR=4.0V
Reverse Recovery
Time Trr 4nS IF=10mA
VR=6V
RL=100Ω
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
A
B
C
Cat
h
ode
M
a
.165
.075
.030
VR=20V
VR=75V
25nA
MINIMELF
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 3 2003/01/07
Admissable Power Dissipation - MilliWatts versus
Ambi ent Temperature - °C
Figure 2
Forward Derating Curve
017550 75 100 125
0
100
200
300
Single Phase, Half Wave
60Hz Resistive or Inductive Load
MilliWatts
°C
150
400
500
600
Junction Capacitance - pF versus
Reverse Voltage - Volts
Instantaneous Forward Current - Amperes versus
Instantaneous Forward Voltage - Volts
Figure 1
Typical Forward Characteri stics
4
6
20
10
MilliAmps
.4 .6 .8 1.0 1.2 1.4
.01
.02
.04
.06
.1
.2
.4
.6
1
2
25°C
Volts
Figure 3
Junction Capacitance
.1 .2 1.4 2 10 20 404 100 200
.1
.2
.6
1
2
10
pF
Volts
6
4
.4
400 1000
TJ=25°C
MCC
DL4148
www.mccsemi.com
Revision: 3 2003/01/07
1 100
4
0
100
200
300
8
Figure 5
Peak Forward Surge Current
Peak Forward Surge Current - Amperes versus
Number Of Cycles At 60Hz - Cyc les
MilliAmps
Cycles
2610 20 60 80
40
400
500
600
Figure 4
Typical Revers e Characteristi cs
Inst ant aneous Reverse Leakage Current - NanoA mperes versus
Junction Temperature - °C
TJ
40
60
200
100
NanoAmp
20 120
40 60 80 100
.1
.2
.4
.6
1
2
4
6
10
20
TA=25°C
400
600
1000
140
TA=100°C
DL4148 MCC
www.mccsemi.com
Revision: 3 2003/01/07