Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-resistance BVDSS -60V
▼ Simple Drive Requirement RDS(ON) 25mΩ
▼ Fast Switching Characteristic ID-26.8A
▼ Halogen Free & RoHS Compliant Product
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W
Data and specifications subject to change without notice
-17
Pulsed Drain Current1
31.3
Total Power Dissipation
Continuous Drain Current, VGS @ 10V
Operating Junction Temperature Range
Halogen-Free Product
AP9579GI-HF
Rating
1.92
+20
-26.8
Total Power Dissipation
-108
Continuous Drain Current, VGS @ 10V
Thermal Data
Parameter
Storage Temperature Range -55 to 150
-55 to 150
201005311
1
-60
Parameter
Drain-Source Voltage
Gate-Source Voltage
G
D
S
GDSTO-220CFM(I)
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
AP9579GI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -60 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-20A - - 25 mΩ
VGS=-4.5V, ID=-15A - - 30 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-20A - 36 - S
IDSS Drain-Source Leakage Current VDS=-48V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=-20A - 45 72 nC
Qgs Gate-Source Charge VDS=-48V - 7.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=--4.5V - 26 - nC
td(on) Turn-on Delay Time2VDS=-30V - 12 - ns
trRise Time ID=-20A - 38 - ns
td(off) Turn-off Delay Time RG=3.3Ω-70-ns
tfFall Time VGS=-10V - 94 - ns
Ciss Input Capacitance VGS=0V - 3600 5760 pF
Coss Output Capacitance VDS=-25V - 375 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 270 - pF
RgGate Resistance f=1.0MHz - 2.5 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-20A, VGS=0V - - -1.3 V
trr Reverse Recovery Time2IS=-20A, VGS=0V, - 43 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 63 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9579GI-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
17
19
21
23
25
246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=-15 A
TC=25 oC
0
40
80
120
160
0 4 8 12 16
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25oC -10V
- 7.0V
- 6.0V
- 5.0V
VG=-4.0V
0.4
0.8
1.2
1.6
2.0
2.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D= -20A
VG= -10V
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oCTj=150 oC
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized -VGS(th) (V)
0
20
40
60
80
100
024681012
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=150 oC -10V
-7.0V
-6.0V
-5.0V
VG= -4.0V
AP9579GI-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
Q
VG
-4.5V
QGS QGD
QG
Charge
0
2
4
6
8
10
0 20406080
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
VDS = -48V
I
D= -20A
0
1000
2000
3000
4000
5000
1 5 9 1317212529
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
1
10
100
1000
0.1 1 10 100 1000
-VDS , Drain-to-Source Voltage (V)
-ID (A)
Tc=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
td(on) trtd(off) tf
VDS
VGS
10%
90%
Operation in this
area limited by
RDS(ON)
