TPCF8402
2009-12-10
1
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
TPCF8402
Portable Equipment Applications
Motor Drive Applications
DC-DC Converter Applications
• Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.)
N Channel RDS (ON) = 38 mΩ (typ.)
• High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.)
N Channel |Yfs| = 6.8 S (typ.)
• Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V)
N Channel IDSS = 10 μA (VDS = 30 V)
• Enhancement-mode
: P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA)
N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS -30 30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR -30 30 V
Gate-source voltage VGSS ±20 ±20 V
DC (Note 1) ID -3.2 4.0
Drain current
Pulse (Note 1) IDP -12.8 16.0
A
Single-device operation
(Note 3a)
PD (1) 1.35 1.35
Drain power
dissipation
(t = 5 s)
(Note 2a)
Single-device value at
dual operation (Note 3b) PD (2) 1.12 1.12
Single-device operation
(Note 3a)
PD (1) 0.53 0.53
Drain power
dissipation
(t = 5 s)
(Note 2b)
Single-device value at
dual operation (Note 3b) PD (2) 0.33 0.33
W
Single pulse avalanche energy (Note 4) EAS 0.67 2.6 mJ
Avalanche current IAR -1.6 2.0 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR 0.11 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with caution.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3U1B
Weight: 0.011 g (typ.)
Circuit Configuration
1 2 3 4
8 7 6 5
TPCF8402
2009-12-10
2
Thermal Characteristics
Characteristics Symbol Max Unit
Single-device operation
(Note 3a) Rth (ch-a) (1) 92.6
Thermal resistance,
channel to ambient
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b) Rth (ch-a) (2) 111.6
°C/W
Single-device operation
(Note 3a) Rth (ch-a) (1) 235.8
Thermal resistance,
channel to ambient
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b) Rth (ch-a) (2) 378.8
°C/W
Marking (Note 6)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: P Channel: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −1.6 A
N Channel: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 2.0 A
Note 5: Repetitive rating: Pulse width limited by maximum channel temperature.
Note 6: “●” on the lower left of the marking indicates Pin 1.
Note 7 A dot marking identifies the indication of product Labels.
Without a dot: [[Pb]]/INCLUDES > MCV
With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
25.4
25.4
Part No.
(or abbreviation code) F6B
Note 7
Lot code (month) Lot No.
Pin #1 Lot code
(year)
Product-specific code
TPCF8402
2009-12-10
3
P-channel
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA
Drain cut-off current IDSS V
DS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA
V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯
Drain-source breakdown voltage
V (BR) DSX ID = −10 mA, VGS = 20 V −15 ⎯ ⎯
V
Gate threshold voltage Vth V
DS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V
VGS = −4.5 V, ID = −1.6A ⎯ 80 105
Drain-source ON resistance RDS (ON)
VGS = −10 V, ID = −1.6 A ⎯ 60 72
mΩ
Forward transfer admittance |Yfs| VDS = −10 V, ID = −1.6 A 2.9 5.9 ⎯ S
Input capacitance Ciss ⎯ 600 ⎯
Reverse transfer capacitance Crss ⎯ 60 ⎯
Output capacitance Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
⎯ 70 ⎯
pF
Rise time tr ⎯ 5.3 ⎯
Turn-on time ton ⎯ 12 ⎯
Fall time tf ⎯ 8.4 ⎯
Switching time
Turn-off time toff
Duty ≤ 1%, tw = 10 μs ⎯ 34 ⎯
ns
Total gate charge
(gate-source plus gate-drain) Qg ⎯ 14 ⎯
Gate-source charge 1 Qgs1 ⎯ 1.4 ⎯
Gate-drain (“miller”) charge Qgd
VDD ≈ −24 V, VGS = −10 V,
ID = −3.2 A
⎯ 2.7 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −12.8 A
Forward voltage (diode) VDSF IDR = −3.2 A, VGS = 0 V ⎯ ⎯ 1.2 V
RL = 9.38Ω
VDD ≈ −15 V
−10
VGS
0 V
4.7 Ω
ID = −1.6 A
VOUT
TPCF8402
2009-12-10
4
N-channel
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA
Drain cut-off current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA
V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯
Drain-source breakdown
voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯
V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 V
VGS = 4.5 V, ID = 2.0 A ⎯ 58 77
Drain-source ON resistance RDS (ON)
VGS = 10 V, ID = 2.0 A ⎯ 38 50
mΩ
Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.0 A 3.4 6.8 ⎯ S
Input capacitance Ciss ⎯ 470 ⎯
Reverse transfer capacitance Crss ⎯ 60 ⎯
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ 80 ⎯
pF
Rise time tr ⎯ 5.2 ⎯
Turn-on time ton ⎯ 8.3 ⎯
Fall time tf ⎯ 4.0 ⎯
Switching time
Turn-off time toff
Duty ≤ 1%, tw = 10 μs ⎯ 22 ⎯
ns
Total gate charge
(gate-source plus gate-drain) Qg ⎯ 10 ⎯
Gate-source charge 1 Qgs1 ⎯ 1.7 ⎯
Gate-drain (“miller”) charge Qgd
VDD ≈ 24 V, VGS = 10 V, ID = 4 A
⎯ 2.4 ⎯
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 16.0 A
Forward voltage (diode) VDSF IDR = 4.0 A, VGS = 0 V ⎯ ⎯ −1.2 V
RL = 7.5Ω
VDD ≈ 15 V
0 V
VGS
10 V
4.7 Ω
ID = 2.0 A
VOUT
TPCF8402
2009-12-10
5
P-channel
Drain current ID (A)
RDS (ON) – ID
Drain-source ON resistance
RDS (ON) (mΩ)
Gate-source voltage VGS (V)
ID – VGS
Drain current ID (A)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
VDS – VGS
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain current ID (A)
⎪Yfs⎪ – ID
Forward transfer admittance
⎪Yfs⎪ (S)
10
0.1 -1 -10
100
1000
-5
-4
-2
-1
0
-3
Common source
Ta = 25°C
Pulse test
VGS = -2.3
-2.5
-2.6
-3.0
-2.8
-3.5
-2.7
-10
-6
-4.5
0 -0.2 -0.4 -0.6 -0.8
-1.0
VGS = -2.3 V
Common source
Ta = 25°C
Pulse test
-2.6
-3.5
-3.0
-10
-2.5
-6
-2.7
-2.8
-4.5
-10
-8
-4
-2
0
-6
0 -1 -2 -3 -4
-5
Ta = −55°C
25
100
Common source
VDS = -10 V
Pulse test
0 -1 -2 -3
0
-5
-4
-8
-6
-4
-2
ID = -3.2A
Common source
Ta= 25℃
Pulse test
-1.6
-0.8
0 -2 -4 -6 -8 -10
0
-1.6
-1.2
-0.8
-0.4
-2.0
25
100
Ta = −55°C
Common source
VDS = -10 V
Pulse test
-0.1 -0.3 -1 -3 -10
1
10
100
V
GS
= -4.5 V
-1
0
Common source
Ta = 25°C
Pulse test
TPCF8402
2009-12-10
6
P-channel
Drain-source voltage VDS (V)
Capacitance – VDS
Capacitance C (pF)
-0.1
10
100
1000
-1 -3 -5 -10
-30 -50 -100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
Ambient temperature Ta (°C)
RDS (ON) – Ta
Drain-source ON resistance
RDS (ON) (mΩ)
Drain-source voltage VDS (V)
IDR – VDS
Drain reverse current IDR (A)
Gate threshold voltage Vth (V)
Ambient temperature Ta (°C)
Vth – Ta
0
-0.5
-1.0
-1.5
-2.0
−80 −40 0 40 80 120 160
Common source
VDS = -10 V
ID = -1mA
Pulse test
Drain power dissipation PD (W)
Ambient temperature Ta (°C)
PD – Ta
0
0.1
Common source
Ta = 25°C
Pulse test
0.3
0.3
0.5
1
3
5
10
0.9 1.2
VGS = 0 V
-5.0
-3.0 -1.0
-10
0.6 1.5
2.0
0.8
0
0 40 80 120 160
0.4
1.2
1.6
200
Device mounted on a glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
ｔ＝5s
(1)
(2)
(3)
(4)
Gate-source voltage VGS (V)
Total gate charge Qg (nC)
Dynamic input/output
characteristics
Drain-source voltage VDS (V)
0 4 8
Common
source
ID = -3.2 A
Ta = 25°C
Pulse test
VDD = -24V
VDS
VGS
12 16
-25
-10
0
-15
-20
-15
-10
0
-12
-6
-24 -12
VDD = -6V
-5
-5
-30
160 −40 0 40 80 120 −80
150
120
60
30
0
90
VGS = -10V
VGS = -4.5V
ID = -0.8A, -1.6A, -3.2A
ID = -0.8A, -1.6A, -3.2A
Common source
Pulse test
TPCF8402
2009-12-10
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P-channel
rth – tw
Pulse width tw (s)
Transient thermal impedance
r
th (℃/W)
Drain-source voltage VDS (V)
Safe operating area
Drain current ID (A)
1
0.001
10
100
1000
0.01 0.1 1 10 100 1000
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
(4) (3)
(2)
(1)
Single pulse
-10
-0.1
-100
-10 -1 -100
* Single pulse
Ta = 25°C
Curves must be derated linearly with
increase in temperature.
ID max (pulsed) *
10 ms *
1 ms *
VDSS
ma
x
-1
-0.1
TPCF8402
2009-12-10
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N-channel
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
5
4
2
1
0
VGS = 2.8 V
Common source
Ta = 25°C
Pulse test
3.2
4.5
3.0
3.8
6.0
3.5
10
3
0 0.8 1.0
0.2 0.4 0.6
8.0
VGS = 2.8 V
Common source
Ta = 25°C
Pulse test
3.8
6.0
4.5
3.0
10
3.5
3.2
8.0
10
8
4
2
0
6
0 4 5
1 2 3
Gate-source voltage VGS (V)
ID – VGS
Drain current ID (A)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
VDS – VGS
Common source
VDS = 10 V
Pulse tset
Ta = −55°C
25
100
0
0 4 5
1 2 3
8
6
2
4
ID = 4A
Common source
Ta= 25℃
Pulse test
2
1
0
0 8 10
2 4 6
2.0
1.6
0.8
0.4
1.2
Drain current ID (A)
RDS (ON) – ID
Drain-source ON resistance
RDS (ON) (mΩ)
Drain current ID (A)
⎪Yfs⎪ – ID
Forward transfer admittance ⎪Yfs⎪ (S)
10
0.1 1 10
30
100
Common source
Ta = 25°C
Pulse test
VGS = 10V
4.5
Common source
VDS = 10 V
Pulse test
25
100
Ta = −55°C
0.1
0 10
1
0.3 1 3
100
10
TPCF8402
2009-12-10
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N-channel
Ambient temperature Ta (°C)
RDS (ON) – Ta
Drain-source ON resistance
RDS (ON) (m Ω)
Drain-source voltage VDS (V)
IDR – VDS
Drain reverse current IDR (A)
0
0.1
Common source
Ta = 25°C
Pulse test
-0.2
0.3
0.5
1
3
5
10
-0.6 -0.8 -1.2
VGS = 0 V
5.0 3.0
1.0
10
-0.4 -1.0
160 −40 0 40 80 120 −80
Common source
Pulse test
120
80
40
0
ID = 4A
2A
VGS = 10V
VGS = 4.5V
ID = 4, 2, 1A
1A
100
60
20
Drain-source voltage VDS (V)
Capacitance – VDS
Capacitance C (pF)
Gate threshold voltage Vth (V)
Ambient temperature Ta (°C)
Vth – Ta
0
1
3
−80 −40 0 40 80 120 160
Common source
VDS = 10 V
ID = 1mA
Pulse test
2
0.1
1
10
100
1000
1 3 5 10 30 50 100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
0.3
Drain power dissipation PD (W)
Ambient temperature Ta (°C)
PD – Ta
2.0
0.8
0
0 40 80
120 160
0.4
1.2
1.6
200
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
ｔ＝5s
(1)
(2)
(3)
(4)
Gate-source voltage VGS (V)
total gate charge Qg (nC)
Dynamic input/output
characteristics
Drain-source voltage VDS (V)
0 4 8
Common source
ID = 4.0A
Ta = 25°C
Pulse test
VDD = 24V
VDS
VGS
12 16
20
10
0
15
10
0
5
15
12
624
12
VDD = 6V
5
30
25
TPCF8402
2009-12-10
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N-channel
rth – tw
Pulse width tw (s)
Transient thermal impedance
r
th (℃/W)
1
0.001
10
100
1000
0.01 0.1 1 10 100 1000
Device mounted on a glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
(4) (3)
(2)
(1)
Single Pulse
Drain-source voltage VDS (V)
Safe operating area
Drain current ID (A)
10
0.1
100
10
1 100
* Single pulse
Ta = 25°C
Curves must be derated linearly with
increase in temperature.
ID max (Pulsed) *
10 ms *
1 ms *
VDSS
max
1
0.1
TPCF8402
2009-12-10
11
RESTRICTIONS ON PRODUCT USE
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in this document, and related hardware, software and systems (collectively “Product”) without notice.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
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injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
