PHOTODIODE Si photodiode S2387 series For visible to IR, general-purpose photometry Features Applications l High sensitivity l Low dark current l High linearity l Analytical equipment l Optical measurement equipment, etc. General ratings / Absolute maximum ratings Type No. S2387-16R S2387-33R S2387-66R S2387-1010R S2387-130R Dimensional outline/ Window material * /R /R /R /R /R Package Active area size Effective active area (mm) 2.7 x 15 6 x 7.6 8.9 x 10.1 15 x 16.5 3.0 x 40 (mm) 1.1 x 5.9 2.4 x 2.4 5.8 x 5.8 10 x 10 1.2 x 29.1 (mm2) 6.4 5.7 33 100 35 Absolute maximum ratings Operating Reverse Storage temperature voltage temperature Topr VR Max. Tstg (V) (C) (C) 30 -20 to +60 -20 to +80 Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Type No. Spectral response range Peak sensitivity wavelength p (nm) (nm) Short circuit Dark current current Isc ID 100 lx He-Ne 4=10 mV V Min. Typ. laser Max. Photo sensitivity S (A/W) p S2387-16R S2387-33R S2387-66R 0.58 320 to 1100 960 S2387-1010R S2387-130R * Window material, R: resin coating GaP LED 560 nm 633 nm 0.33 0.37 (A) (A) 4.4 6.0 4.4 5.8 24 31 68 91 25 32 (pA) Terminal Temp. Shunt coeffi- Rise time capaciresistance tr tance NEP cient Rsh Ct of ID VR=0 V V4=10 mV TCID RL=1 k VR=0 V f=10 kHz Min. Typ. (pF) (G) (G) (W/Hz1/2) (times/C) (s) 5 50 200 100 1.8 1.12 10 33 11 730 2 50 9.9 x 10-16 4300 0.2 10 2.2 x 10-15 12000 0.05 5 3.1 x 10-15 5000 0.1 20 2.2 x 10-15 Si photodiode Spectral response Photo sensitivity temperature characteristic (Typ. Ta=25 C) PHOTO SENSITIVITY (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 400 600 800 (Typ.) +1.5 TEMPERATURE COEFFICIENT (%/C) 0.7 0 200 S2387 series +1.0 +0.5 0 -0.5 200 1000 WAVELENGTH (nm) 400 600 800 1000 WAVELENGTH (nm) KSPDB0115EA Rise time vs. load resistance KSPDB0058EB Dark current vs. reverse voltage (Typ. Ta=25 C, VR=0 V) 1 ms (Typ. Ta=25 C) 1 nA S2387-1010R S2387-1010R S2387-130R S2387-66R 100 pA DARK CURRENT RISE TIME 100 s 10 s 1 s 100 ns S2387-130R 1 pA 100 fA S2387-16R/33R 10 ns 102 10 pA 103 104 S2387-16R/33R 10 fA 0.01 105 0.1 1 10 100 REVERSE VOLTAGE (V) LOAD RESISTANCE () KSPDB0116EA Shunt resistance vs. ambient temperature KSPDB0117EA Photo sensitivity linearity (S2387-1010R) (Typ. VR=10 mV) 10 T 100 1 T 10-2 100 G 10-4 OUTPUT CURRENT (A) SHUNT RESISTANCE S2387-16R/33R 10 G 1 G S2387-1010R 100 M 10 M S2387-130R 1 M 100 k -20 (Typ. Ta=25 C, A TUNGSTEN LAMP FULLY ILLUMINATED) 20 40 60 80 AMBIENT TEMPERATURE (C) RL=100 10-6 10-8 10-10 10-12 10-14 0 RL=10 10-16 10-10 10-8 DEPENDENT ON NEP 10-6 10-4 10-2 100 102 104 106 INCIDENT LIGHT LEVEL (lx) KSPDB0118EA KSPDB0026EB Si photodiode S2387 series Dimensional outlines (unit: mm) S2387-33R 7.6 0.1 ACTIVE AREA 0.5 LEAD 2.0 0.1 10.5 0.75 0.35 15 0.15 13.5 0.13 1.5 0.1 PHOTOSENSITIVE SURFACE 0.5 LEAD 6.2 0.45 PHOTOSENSITIVE SURFACE 6.0 0.1 ACTIVE AREA ANODE TERMINAL MARK 6.6 0.3 4.5 0.2 ANODE TERMINAL MARK 8.5 0.2 5.0 0.3 HOLE (2 x) 0.8 2.7 0.1 S2387-16R Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0108EA KSPDA0106EA S2387-66R S2387-1010R 10.1 0.1 2.15 0.1 10.5 10.5 0.5 LEAD 9.2 0.3 15.1 0.3 7.4 0.2 12.5 0.2 ANODE TERMINAL MARK 8.0 0.3 ANODE TERMINAL MARK Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0110EA 13.7 0.3 0.5 LEAD 0.9 PHOTOSENSITIVE SURFACE 0.3 0.75 PHOTOSENSITIVE SURFACE 15.0 0.15 8.9 0.1 ACTIVE AREA 2.0 0.1 ACTIVE AREA 0.3 16.5 0.2 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0112EA Si photodiode S2387 series S2387-130R 40.0 0.7 3.0+- 00.3 33.1 0.7 1.2 29.1 13 0.4 3.2 0.2 ACTIVE AREA PHOTOSENSITIVE SURFACE 0.45 LEAD 33.1 0.7 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0117EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KSPD1033E01 Mar. 2001 DN