Features
l
High sensitivity
l
Low dark current
l
High linearity
Applications
l
Analytical equipment
l
Optical measurement equipment, etc.
PHOTODIODE
Si photodiode
For visible to IR, general-purpose photometry
S2387 series
■ General ratings / Absolute maximum ratings
Absolute maximum ratings
Package Active
area size
Effective
active area
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material * (mm) (mm) (mm2) (V) (°C) (°C)
S2387-16R ➀/R 2.7 × 15 1.1 × 5.9 6.4
S2387-33R ➁/R 6 × 7.6 2.4 × 2.4 5.7
S2387-66R ➂/R 8.9 × 10.1 5.8 × 5.8 33
S2387-1010R ➃/R 15 × 16.5 10 × 10 100
S2387-130R ➄/R 3.0 × 40 1.2 × 29.1 35
30 -20 to +60 -20 to +80
■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Short circuit
current
Isc
100
lx
Spectral
response
range
λ
Peak
sensi-
tivity
wave-
length
λpλpGaP
LED
He-Ne
laser Min. Typ.
Temp.
coeffi-
cient
of ID
TCID
Shunt
resistance
Rsh
V4=10 mV
NEP
Dark
current
ID
V4=10 mV
Max.
Rise time
tr
VR=0 V
RL=1 kΩ
Terminal
capaci-
tance
Ct
VR=0 V
f=10 kHz Min. Typ.
Type No.
(nm) (nm) 560 nm 633 nm (µA) (µA) (pA) (times/°C) (µs) (pF) (G
Ω
)(G
Ω
)(W/Hz1/2)
S2387-16R 4.4 6.0
S2387-33R 4.4 5.8 5 1.8 730 2 50 9.9 × 10-16
S2387-66R 24 31 50 10 4300 0.2 10 2.2 × 10-15
S2387-1010R 68 91 200 33 12000 0.05 5 3.1 × 10-15
S2387-130R
320 to 1100 960 0.58 0.33 0.37
25 32 100
1.12
11 5000 0.1 20 2.2 × 10-15
* Window material, R: resin coating
Si photodiode
S2387 series
AMBIENT TEMPERATURE (˚C)
SHUNT RESISTANCE
(Typ. V
R
=10 mV)
100 kΩ
1 MΩ
10 MΩ
100 MΩ
1 GΩ
10 TΩ
-20 0 20 40 60
S2387-16R/33R
S2387-130R
S2387-1010R
80
10 GΩ
100 GΩ
1 TΩ
OUTPUT CURRENT (A)
INCIDENT LIGHT LEVEL (lx)
(Typ. Ta=25 ˚C, A TUNGSTEN LAMP FULLY ILLUMINATED)
10
-16
10
-10
10
-8
10
-6
10
-4
10
-2
10
0
10
2
10
4
10
6
10
-14
10
-12
10
-10
10
-8
10
-6
10
-4
10
-2
10
0
R
L
=10 Ω
R
L
=100 Ω
DEPENDENT ON NEP
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
200 400 600 800 1000
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
(Typ. Ta=25 ˚C)
■ Spectral response ■ Photo sensitivity temperature characteristic
KSPDB0115EA KSPDB0058EB
KSPDB0116EA KSPDB0117EA
-0.5
0
+0.5
+1.0
+1.5
200 400 600 800 1000
WAVELENGTH (nm)
TEMPERATURE COEFFICIENT (%/˚C)
(Typ.)
■ Rise time vs. load resistance ■ Dark current vs. reverse voltage
■ Shunt resistance vs. ambient temperature ■ Photo sensitivity linearity (S2387-1010R)
KSPDB0118EA KSPDB0026EB
LOAD RESISTANCE (Ω)
RISE TIME
(Typ. Ta=25 ˚C, V
R
=0 V)
10 ns
100 ns
1 µs
10 µs
100 µs
1 ms
10
2
10
3
10
4
10
5
S2387-16R/33R
S2387-130R
S2387-1010R
REVERSE VOLTAGE (V)
DARK CURRENT
(Typ. Ta=25 ˚C)
10 fA
100 fA
1 pA
10 pA
100 pA
1 nA
0.01 0.1 1 10 100
S2387-16R/33R
S2387-66R
S2387-1010R
S2387-130R
Si photodiode
S2387 series
8.5 ± 0.2
2.7 ± 0.1
1.5 ± 0.1
6.2
ANODE
TERMINAL MARK
13.5 ± 0.13
15 ± 0.15
0.45
ACTIVE AREA
HOLE
(2 ×) 0.8
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
7.6 ± 0.1
6.0 ± 0.1
ACTIVE AREA
2.0 ± 0.1
10.5
0.75
0.35
6.6 ± 0.3
4.5 ± 0.2
5.0 ± 0.3
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
10.1 ± 0.1
8.9 ± 0.1
ACTIVE AREA
2.0 ± 0.1
10.5
0.75
0.3
9.2 ± 0.3
7.4 ± 0.2
8.0 ± 0.3
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
16.5 ± 0.2
15.0 ± 0.15
ACTIVE AREA
2.15 ± 0.1
10.5
0.9
0.3
15.1 ± 0.3
12.5 ± 0.2
13.7 ± 0.3
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
■■
■■
■Dimensional outlines (unit: mm)
➀ S2387-16R ➁ S2387-33R
KSPDA0106EA KSPDA0108EA
KSPDA0112EAKSPDA0110EA
➂ S2387-66R ➃ S2387-1010R
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
Si photodiode
S2387 series
Cat. No. KSPD1033E01
Mar. 2001 DN
0.45
LEAD
ACTIVE AREA
13 3.2 ± 0.2
0.4
29.1
33.1 ± 0.7
40.0 ± 0.7
3.0
-0.3
+0
33.1 ± 0.7
1.2
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0117EA
➄ S2387-130R
