© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 12 1Publication Order Number:
2N5194/D
2N5194, 2N5195
Preferred Devices
Silicon PNP Power
Transistors
These devices are designed for use in power amplifier and switching
circuits; excellent safe area limits. Complement to NPN 2N5191,
2N5192.
Features
•Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
2N5194
ÎÎÎÎ
ÎÎÎÎ
2N5195
ÎÎ
ÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
ÎÎÎ
ÎÎÎ
VCEO
ÎÎÎ
ÎÎÎ
60
ÎÎÎÎ
ÎÎÎÎ
80
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector−Base Voltage
ÎÎÎ
ÎÎÎ
VCB
ÎÎÎ
ÎÎÎ
60
ÎÎÎÎ
ÎÎÎÎ
80
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Base Voltage
ÎÎÎ
ÎÎÎ
VEB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
5.0
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector Current
ÎÎÎ
ÎÎÎ
IC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
4.0
ÎÎ
ÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎ
ÎÎÎ
IB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1.0
ÎÎ
ÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25°C
Derate above 25°C
ÎÎÎ
Î
Î
Î
ÎÎÎ
PD
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
40
320
ÎÎ
ÎÎ
ÎÎ
W
W/°C
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎ
ÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
–65 to +150
ÎÎ
ÎÎ
°C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎ
ÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance,
Junction−to−Case
ÎÎÎ
Î
Î
Î
ÎÎÎ
qJC
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
3.12
ÎÎ
ÎÎ
ÎÎ
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
4 AMPERE
POWER TRANSISTORS
PNP SILICON
60 − 80 VOLTS
MARKING DIAGRAM
TO−225AA
CASE 77−09
STYLE 1
Y = Year
WW = Work Week
2N519x = Device Code
x = 4 or 5
G = Pb−Free Package
2N5195 TO−225 500 Units / Bulk
2N5195G TO−225
(Pb−Free) 500 Units / Bulk
Device Package Shipping
2N5194 TO−225 500 Units / Bulk
2N5194G TO−225
(Pb−Free) 500 Units / Bulk
ORDERING INFORMATION
YWW
2
N519xG
2N5194, 2N5195
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
Min
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 0.1 Adc, IB = 0) 2N5194
2N5195
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
Î
60
80
ÎÎ
−
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0) 2N5194
(VCE = 80 Vdc, IB = 0) 2N5195
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEO
Î
Î
−
−
ÎÎ
ÎÎ
1.0
1.0
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N5194
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N5195
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N5194
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N5195
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEX
Î
Î
−
−
−
−
ÎÎ
ÎÎ
0.1
0.1
2.0
2.0
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) 2N5194
(VCB = 80 Vdc, IE = 0) 2N5195
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICBO
Î
−
−
ÎÎ
0.1
0.1
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IEBO
Î
−
ÎÎ
1.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (Note 3)
(IC = 1.5 Adc, VCE = 2.0 Vdc) 2N5194
2N5195
(IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5194
2N5195
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
Î
Î
25
20
10
7.0
ÎÎ
ÎÎ
100
80
−
−
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage (Note 3)
(IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
Î
Î
−
−
ÎÎ
ÎÎ
0.6
1.4
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage (Note 3)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
−
1.2
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
fT
Î
2.0
ÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
MHz
2. Indicates JEDEC registered data.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
10
0.1
0.004
7.0
5.0
1.0
0.7
0.5
0.3
0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 4.0
VCE = 2.0 V
VCE = 10 V
2.0 3.0
TJ = 150°C
−55 °C
25°C
3.0
2.0
0.2
hFE, DC CURRENT GAIN (NORMALIZED)
2N5194, 2N5195
http://onsemi.com
3
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
2.0
0
0.05
1.6
1.2
0.8
0.4
0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10 500
IC = 10 mA
5.0 7.0 20 30 50 70 100 200 300
100 mA 1.0 A 3.0 A
TJ = 25°C
RBE, EXTERNAL BASE−EMITTER RESISTANCE (OHMS)
2.0
0.005
IC, COLLECTOR CURRENT (AMP)
0.01 0.02 0.03 0.05 0.2 0.3 1.0 2.0 4.0
1.6
1.2
0.8
0.4
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOLTAGE (VOLTS)
Figure 3. “On” Voltage
0.1 0.5 3.0
VBE @ VCE = 2.0 V
+2.5
Figure 4. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
*APPLIES FOR IC/IB ≤ hFE @ VCE
TJ = −65°C to +150°C
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.0
+1.5
+0.5
0
−0.5
−1.0
−1.5
−2.0
−2.5
qVB for VBE
*qVC for VCE(sat)
+1.0
0.005 0.01 0.020.03 0.05 0.2 0.3 1.0 2.0 4.00.1 0.5 3.0
103
+0.4
Figure 5. Collector Cut−Off Region
VBE, BASE−EMITTER VOLTAGE (VOLTS)
102
101
100
10−1
, COLLECTOR CURRENT (A)μIC
10− 2
10− 3
+0.3 +0.2 +0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6
VCE = 30 Vdc
TJ = 150°C
100°C
25°C
REVERSE FORWARD
ICES
107
20
Figure 6. Effects of Base−Emitter Resistance
TJ, JUNCTION TEMPERATURE (°C)
40 60 80 100 120 140 160
106
105
104
103
102
VCE = 30 V
IC = 10 x ICES
IC = 2 x ICES IC ≈ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 5)
2N5194, 2N5195
http://onsemi.com
4
Figure 7. Switching Time Equivalent Test Circuit
APPROX
−11 V
TURN−ON PULSE
Vin
t1
VBE(off)
TURN−OFF PULSE
Vin
t3
t2
APPROX
−11 V
VCC
SCOPE
RB
Cjd<<Ceb
+4.0 V
t1 ≤ 7.0 ns
100 < t2 < 500 ms
t3 < 15 ns
DUTY CYCLE ≈ 2.0%
Vin
RC
0
RB AND RC VARIED
TO OBTAIN DESIRED
CURRENT LEVELS
500
0.1
VR, REVERSE VOLTAGE (VOLTS)
0.2 0.3 0.5 1.0 3.0 5.0 20 40
300
200
100
70
50
TJ = 25°C
CAPACITANCE (pF)
Figure 8. Capacitance
2.0 10 30
Ceb
Ccb
APPROX
+9.0 V
2.0
0.05
Figure 9. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.02 0.07 0.1 0.2 0.3 1.0 2.0 4.0
tr @ VCC = 30 V
IC/IB = 10
TJ = 25°C
0.03
t, TIME (s)μ
0.5
0.05
0.07
0.7 3.0
tr @ VCC = 10 V
td @ VBE(off) = 2.0 V
2.0
0.05
Figure 10. Turn−Off Time
IC, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.02 0.07 0.1 0.2 0.3 1.0 2.0 4.0
tf @ VCC = 30 V
IB1 = IB2
IC/IB = 10
ts′ = ts − 1/8 tf
TJ = 25°C
0.03
t, TIME (s)μ
0.5
0.05
0.07
0.7 3.0
tf @ VCC = 10 V
ts′
10
1.0
Figure 11. Rating and Thermal Data
Active−Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.1 2.0 5.0 10 20 50 100
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25°C
BONDING WIRE LIMIT
0.2
IC, COLLECTOR CURRENT (AMP)
CURVES APPLY BELOW RATED VCEO
TJ = 150°C
2N5194
dc
5.0 ms 1.0 ms
100 ms
2N5195
Note 1:
There are two limitations on the power handling ability of
a transistor; average junction temperature and second
breakdown. Safe operating area curves indicate I C − V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on TJ(pk) = 150_C. T C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high−case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
2N5194, 2N5195
http://onsemi.com
5
Figure 12. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500
qJC(max) = 3.12°C/W
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
tP
PPPP
t1
1/f
DUTY CYCLE, D = t1 f = t1
tP
PEAK PULSE POWER = PP
Figure 13.
A train of periodical power pulses can be represented by
the model shown in Figure 13. Using the model and the
device thermal response, the normalized effective transient
thermal resistance of Figure 12 was calculated for various
duty cycles.
T o find qJC(t), multiply the value obtained from Figure 12
by the steady state value qJC.
Example:
The 2N5193 is dissipating 50 watts under the following
conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2).
Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,
the reading of r(t1, D) is 0.27.
The peak rise in junction temperature is therefore:
DT = r(t) x PP x qJC = 0.27 x 50 x 3.12 = 42.2_C
2N5194, 2N5195
http://onsemi.com
6
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
−B−
−A− M
K
FC
Q
H
V
G
S
D
JR
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 −−− 1.02 −−−
__
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