2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http://onsemi.com Features * Pb-Free Packages are Available* IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIII III III IIII II IIIIIIIIIII III III IIII II IIIIIIIIIII III III IIII II IIIIIIIIIII III IIIIII II III IIII IIIIIIIIIII III IIIIII II IIIIIIIIIII III IIIIII II IIIIIIIIIII III IIIIII II IIIIIIIIIII III IIIIII II III II IIIIIIIIIII IIIIII IIIIIIIIIII III IIIIII II IIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIIIII II IIIIIIIIIII III IIIIII II IIIIIIIIIII III IIIIII II IIIIIIIIIII III IIIIII II MAXIMUM RATINGS (Note 1) Rating Symbol 2N5194 2N5195 Unit VCEO 60 80 Vdc Collector-Base Voltage VCB 60 80 Vdc Emitter-Base Voltage Collector-Emitter Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 40 320 W W/C TJ, Tstg - 65 to + 150 C/W Symbol Max Unit qJC 3.12 C/W Operating and Storage Junction Temperature Range 4 AMPERE POWER TRANSISTORS PNP SILICON 60 - 80 VOLTS TO-225AA CASE 77-09 STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case MARKING DIAGRAM YWW 2 N519xG Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC registered data. Y WW 2N519x G = Year = Work Week = Device Code x = 4 or 5 = Pb-Free Package ORDERING INFORMATION Device 2N5194 2N5194G 2N5195 2N5195G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 October, 2006 - Rev. 12 1 Package Shipping TO-225 500 Units / Bulk TO-225 (Pb-Free) 500 Units / Bulk TO-225 500 Units / Bulk TO-225 (Pb-Free) 500 Units / Bulk Preferred devices are recommended choices for future use and best overall value. Publication Order Number: 2N5194/D 2N5194, 2N5195 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIII IIIIIIIIIIIIIIIIIIIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII III IIII III IIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII III IIII III IIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIII IIIIIIIIIIIIIIIIIIIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIII III IIII III IIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII III IIII III IIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Characteristic Symbol Min Max 60 80 - - - - 1.0 1.0 - - - - 0.1 0.1 2.0 2.0 - - 0.1 0.1 - 1.0 25 20 10 7.0 100 80 - - - - 0.6 1.4 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3) (IC = 0.1 Adc, IB = 0) VCEO(sus) Vdc 2N5194 2N5195 Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) 2N5194 2N5195 ICEO Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N5194 2N5195 2N5194 2N5195 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 2N5194 2N5195 mAdc ICEX mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) mAdc IEBO mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 1.5 Adc, VCE = 2.0 Vdc) hFE 2N5194 2N5195 2N5194 2N5195 (IC = 4.0 Adc, VCE = 2.0 Vdc) - Collector-Emitter Saturation Voltage (Note 3) (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 4.0 Adc, IB = 1.0 Adc) VCE(sat) Vdc Base-Emitter On Voltage (Note 3) (IC = 1.5 Adc, VCE = 2.0 Vdc) VBE(on) - 1.2 Vdc fT 2.0 - MHz DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) 2. Indicates JEDEC registered data. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. hFE , DC CURRENT GAIN (NORMALIZED) 10 7.0 5.0 TJ = 150C VCE = 2.0 V VCE = 10 V 3.0 2.0 1.0 0.7 0.5 25C -55 C 0.3 0.2 0.1 0.004 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) Figure 1. DC Current Gain http://onsemi.com 2 0.5 1.0 2.0 3.0 4.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N5194, 2N5195 2.0 1.6 1.2 IC = 10 mA 100 mA 1.0 A 3.0 A 0.8 TJ = 25C 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 70 100 200 300 500 2.0 TJ = 25C 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 IC, COLLECTOR CURRENT (A) +1.0 +0.5 *qVC for VCE(sat) 0 -0.5 -1.0 qVB for VBE -1.5 -2.0 -2.5 0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 Figure 4. Temperature Coefficients 102 TJ = 150C 101 10- 2 +1.5 Figure 3. "On" Voltage VCE = 30 Vdc 10-1 *APPLIES FOR IC/IB hFE @ VCE TJ = -65C to +150C +2.0 IC, COLLECTOR CURRENT (AMP) 103 100 +2.5 IC, COLLECTOR CURRENT (AMP) RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) VOLTAGE (VOLTS) 1.6 V, TEMPERATURE COEFFICIENTS (mV/C) Figure 2. Collector Saturation Region 100C REVERSE FORWARD 25C 10- 3 +0.4 +0.3 +0.2 +0.1 ICES 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 107 VCE = 30 V 106 IC = 10 x ICES 105 IC = 2 x ICES IC ICES 104 103 102 20 VBE, BASE-EMITTER VOLTAGE (VOLTS) (TYPICAL ICES VALUES OBTAINED FROM FIGURE 5) 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) Figure 5. Collector Cut-Off Region Figure 6. Effects of Base-Emitter Resistance http://onsemi.com 3 160 2N5194, 2N5195 VCC TURN-ON PULSE VBE(off) Vin 0 TJ = 25C Vin RB SCOPE 300 Cjd<<Ceb t1 APPROX +9.0 V t2 +4.0 V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS Vin APPROX -11 V 500 CAPACITANCE (pF) APPROX -11 V RC t3 TURN-OFF PULSE 200 Ceb 100 Ccb 70 t1 7.0 ns 100 < t2 < 500 ms t3 < 15 ns DUTY CYCLE 2.0% 50 0.1 0.2 0.3 0.5 tr @ VCC = 10 V 0.3 0.2 0.1 0.07 0.05 td @ VBE(off) = 2.0 V 0.03 0.02 0.2 0.3 0.05 0.07 0.1 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 0.03 0.02 0.05 0.07 0.1 3.0 4.0 Figure 9. Turn-On Time IC, COLLECTOR CURRENT (AMP) 0.1 1.0 tf @ VCC = 10 V 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 4.0 Note 1: There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on T J(pk) = 150_C. T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. At high-case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 1.0 ms 5.0 ms 5.0 0.2 tf @ VCC = 30 V Figure 10. Turn-Off Time 10 0.5 20 30 40 IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C ts 0.7 0.5 tr @ VCC = 30 V t, TIME (s) t, TIME (s) 1.0 0.3 0.2 1.0 10 2.0 IC/IB = 10 TJ = 25C 1.0 2.0 5.0 Figure 8. Capacitance 2.0 0.1 0.07 0.05 2.0 3.0 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Switching Time Equivalent Test Circuit 0.7 0.5 1.0 100 ms TJ = 150C dc SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C BONDING WIRE LIMIT CURVES APPLY BELOW RATED VCEO 2N5194 2N5195 2.0 5.0 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 11. Rating and Thermal Data Active-Region Safe Operating Area http://onsemi.com 4 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N5194, 2N5195 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 qJC(max) = 3.12C/W 0.2 0.1 0.05 0.02 SINGLE PULSE 0.02 0.03 0.01 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 12. Thermal Response DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA A train of periodical power pulses can be represented by the model shown in Figure 13. Using the model and the device thermal response, the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles. To find qJC(t), multiply the value obtained from Figure 12 by the steady state value qJC. Example: The 2N5193 is dissipating 50 watts under the following conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2). Using Figure 12, at a pulse width of 0.1 ms and D = 0.2, the reading of r(t1, D) is 0.27. The peak rise in junction temperature is therefore: tP PP PP t1 1/f t1 tP PEAK PULSE POWER = PP DUTY CYCLE, D = t1 f = Figure 13. DT = r(t) x PP x qJC = 0.27 x 50 x 3.12 = 42.2_C http://onsemi.com 5 2N5194, 2N5195 PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. C M 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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