VCEO Collector – Emitter Voltage
VCB Collector – Base Voltage
VEB Emitter – Base Voltage
ICCollector Current Continuous
ICPeak (1)
IBBase Current
PDTotal Power Dissipation
Derate above 25 °C
TJ, Tstg Operating and Storage Junction Temperature Range
R
q
JC Thermal Resistance , Junction To Case
300V
500V
6V
2A
5A
1A
35W
0.2W / °C
-65 to 200 °C
5.0°C / W
LAB
SEME
2N4240
MECHANICAL DATA
Dimensions in mm
24.33 (0.958)
24.43 (0.962)
14.48 (0.570)
14.99 (0.590)
3.68
(0.145) rad.
max. 3.61 (0.142)
3.86 (0.145)
rad.
0.71 (0.028)
0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
NPN TRANSISTOR
MEDIUM POWER
HIGH VOLTAGE
APPLICATIONS
Designed for switching regulator
applications where high frequency and
high voltage swings are required.
TO66 Package.
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
Prelim. 8/93
NOTES:
(1) Pulse Test: Pulse Width = 5.0 ms , Duty Cycle
£
10%.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
FIGURE 1 – SWITCHING TIME TEST CIRCUIT
2N4240
Prelim. 8/93
ELECTRICAL CHARACTERISTICS (Tcase = 25°C , unless otherwise stated)
Collector – Emitter
Sustaining Voltage
ICEO Collector Cutoff Current
ICEX Collector Cutoff Current
IEBO Emitter Cutoff Current
IC= 200mA , IB= 0
VCE = 150V , IB= 0
VCE = 450V , VBE(off) = 1.5V
VCE = 450V , VBE(off) = 1.5V , TC=150°C
VBE = 6V , IC= 0
300
5.0
2.0
5.0
0.5
Parameter Test Conditions Min. Typ. Max. Unit.
V
mA
mA
mA
Current Gain
Collector – Emitter
Saturation Voltage
Base – Emitter
Saturation Voltage
Base – Emitter
On Voltage
Second Breakdown
Collector Current
IC= 0.1A , VCE = 10V
IC= 0.75A , VCE = 2V
IC= 0.75A , VCE = 10V
IC= 0.75A , IB= 75mA
IC= 0.75A , IB= 75mA
IC= 0.1A , VCE = 10V
(VCC = 100V)
40
10 100
30 150
1.0
1.8
1.4
350
Parameter Test Conditions Min. Typ. Max. Unit.
—
V
V
V
mA
hFE
VCE(sat)
VBE(sat)
VBE(on)
Is/b
Current Gain –
Bandwidth Product (2)
Output Capacitance
IC= 200mA , VCE = 10V
ftest = 5.0MHz
VCB = 10V , IE= 0 , f = 1.0MHz
15
120
Parameter Test Conditions Min. Typ. Max. Unit.
MHz
pF
fT
Cob
Rise Time
Storage Time
Fall Time
VCC = 200V , IC= 0.75A
RL= 200
W
, IB1 = 100mA
VCC = 200V , IC= 0.75A
IB1 = IB2 = 75mA
VCC = 200V , IC= 0.75A
IB1 = IB2 = 75mA
0.5
6.0
3.0
Parameter Test Conditions Min. Typ. Max. Unit.
m
S
m
S
m
S
tr
ts
tf
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
NOTES:
(1) Pulse Test: Pulse Width = 300
m
s , Duty Cycle
£
2%
(2) fT=
|
hfe
|
• ftest
RBAND RCvaried to obtain desired current levels.
D1must be fast recovery type.
For tdand tr, D1is disconnected and V2 = 0.
VCEO(sus)
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
