UNISONIC TECHNOLOGIES CO., LTD
2N7002DW
Power MOSFET
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Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-534.C
300m
A
, 60V DUAL
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N7002DW uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* High Density Cell Design for Low RDS(ON).
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
SYMBOL
ORDERING INFORMATION
Ordering Number Package Pin Assignment Packing
Lead Free Halogen Free 12345 6
2N7002DWL-AL6-R 2N7002DWG-AL6-R SOT-363
S1 G1 D2 S2 G2 D1 Tape Reel
MARKING
G: Halogen Free
L: Lead Free
3P
2N7002DW Power MOSFET
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ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted.)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage (RGS 1M) VDGR 60 V
Gate Source Voltage Continuous VGSS ±20 V
Non Repetitive(tP<50μs) ±40
Drain Current Continuous ID 300 mA
Pulsed 800
Power Dissipation PD 200 mW
Derated Above 25°C 1.6 mW/°C
Junction Temperature TJ + 150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 625 (Note1) °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS V
GS=0V, ID=10μA 60 V
Drain-Source Leakage Current IDSS V
DS=60V, VGS =0V 1 μA
Gate-Source Leakage Current IGSSF V
GS =20V, VDS=0V 100 nA
IGSSR V
GS =-20V, VDS=0V -100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(TH) V
GS = VDS, ID=250μA 1 2.1 2.5 V
Drain-Source On-Voltage VDS (ON) VGS = 10V, ID=300mA 0.6 3.75 V
VGS = 5.0V, ID=50mA 0.09 1.5
Static Drain-Source On-Resistance RDS (ON) VGS=10V, ID=300mA,TJ=125°C 13.5
VGS =5.0V, ID=50mA 7.5
DYNAMIC CHARACTERISTICS
Input Capacitance CISS V
DS=25V,VGS=0V,f=1.0MHz 20 50 pF
Output Capacitance COSS 11 25 pF
Reverse Transfer Capacitance CRSS 4 5 pF
Turn-On Time tON
VDD=30V, RL=150
ID=200mA, VGS =10V
RGEN =25
20 nS
Turn-Off Time tOFF
VDD=30V, RL=25
ID=200mA, VGS=10V
RGEN =25
20 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD V
GS=0V, Is=300mA (Note ) 0.88 1.5 V
Maximum Pulsed Drain-Source Diode
Forward Current ISM 0.8 A
Maximum Continuous Drain-Source
Diode Forward Current Is 300 mA
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse Test: Pulse Width300μs, Duty Cycle2.0%
2N7002DW Power MOSFET
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TEST CIRCUIT AND WAVEFORM
Fig. 1
VGS
RGEN
VDD
VIN
RL
VOUT
DUT
G
D
S
Pulse Width
Input, VIN
Output, VOUT
tON tOFF
tD(OFF)
tR
tD(ON) tF
Inverted
10%
10%10%
50%50%
90%
90%
90%
Fig. 2 Switching Waveforms
2N7002DW Power MOSFET
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TYPICAL CHARACTERISTICS
Drain-Source Current, ID(A)
Normalized Drain-Source
ON-Resistance, RDS (ON)()
10075
0
-25
2
1.5
1
-50
0.5
1.61.2
0.8
0.4
VGS=10V
3
2.5
2
1.5
1
0
0.5
25 50 150
125
0.75
1.2 5
1.75
2
0
TJ=125°C
25°C
Normalized Drain-Source
ON- Resistance, RDS(ON)()
Junction Temperature, TJ(°C)
On-Resistance Varisation with Temperature
VGS=10V
ID=300mA
Normalized Drain-Source ON-
Resistance, RDS (ON)()
Drain Current,ID(A)
On-Resistance Varisation with Drain
Current and Temperature
010
8
6
42 100750-25
-50 25 50 125
0.8
0.4
0.6
0.2
1.0
0
150
1.1
1.05
1
0.95
0.9
0.85
0.8
Drain Current, ID(A)
Gate to Source Voltage, VGS (V)
Transfer Characteristics
VDS=10V 25°C
125°C
Normalized Gate-Source Threshold
Voltage, VGS(TH)(V)
Junction Temperature, TJ (°C)
Gate Threshold Varisation with Temperature
VGS = VDS
ID = 1mA
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TYPICAL CHARACTERICS (Cont.)
10075
0
-25
1.1
1.05
1
-50
0.925
11.2
0.8
0.4
1
0.5
0.1
0.05
0.01
0.2
0.005
25 50 150
125
0.95
1.025
1.075
1.4
0.001
0.975
0.6
2
Normalized Drain-Source Breakdown
Voltage, BVDSS(V)
Junction Temperature, TJ(°C)
Breakdown Voltage Varisation
with Temperature
ID = 250μA
Body Diode Forward Voltage, VSD (V)
Body Diode Forward Voltage Varisation
with Temperature
Reverse Drain Current, IS(A)
VGS=0V
TJ =125°C
25°C
Capacitance (pF)
Gate-Source Voltage, VGS (V)
2N7002DW Power MOSFET
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.