Vishay Siliconix
Si3457CDV
Document Number: 68602
S09-0131-Rev. B, 02-Feb-09
www.vishay.com
1
New Product
P-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
APPLICATIONS
• Load Switch
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)ID (A)aQg (Typ.)
- 30
0.074 at VGS = - 10 V - 5.1
5.1 nC
0.113 at VGS = - 4.5 V - 4.1
(4) S
(3) G
(1, 2, 5, 6) D
TSOP-6
Top View
6
4
1
2
3
5
Ordering Information: Si3457CDV-T1-E3 (Lead (Pb)-free)
Si3457CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET
3 mm
2.85 mm
Marking Code
AT XXX
Lot Traceability
and Date Code
Part # Code
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 30 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
- 5.1
A
TC = 70 °C - 4.1
TA = 25 °C - 4.1b, c
TA = 70 °C - 3.3b, c
Pulsed Drain Current IDM - 20
Continuous Source-Drain Diode Current
TC = 25 °C
IS
- 2.5
TA = 25 °C - 1.67b, c
Maximum Power Dissipation
TC = 25 °C
PD
3.0
W
TC = 70 °C 2.0
TA = 25 °C 2.0b, c
TA = 70 °C 1.3b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 55 62.5 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 34 41
www.vishay.com
2
Document Number: 68602
S09-0131-Rev. B, 02-Feb-09
Vishay Siliconix
Si3457CDV
New Product
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolut e Maximum Ratings” may cause permanent damage to t he device. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect devi ce reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V
VDS Temperature Coefficient ΔVDS/TJID = - 250 µA - 31 mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ4.5
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 30 V, VGS = 0 V - 1 µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10
On-State Drain CurrentaID(on) V
DS ≤ - 5 V, VGS = - 10 V - 20 A
Drain-Source On-State ResistanceaRDS(on)
VGS = - 10 V, ID = - 4.1 A 0.060 0.074 Ω
VGS = - 4.5 V, ID = - 1.0 A 0.092 0.113
Forward Transconductanceagfs VDS = - 15 V, ID = - 4.1 A 8S
Dynamicb
Input Capacitance Ciss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
450
pFOutput Capacitance Coss 80
Reverse Transfer Capacitance Crss 63
Total Gate Charge Qg
VDS = - 15 V, VGS = - 10 V, ID = - 4.1 A 10 15
nC
VDS = - 15 V, VGS = - 4.5 V, ID = - 4.1 A
5.1 8
Gate-Source Charge Qgs 1.8
Gate-Drain Charge Qgd 2.5
Gate Resistance Rgf = 1 MHz 7 Ω
Tur n - O n D e l ay Time td(on)
VDD = - 15 V, RL = 4.6 Ω
ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω
40 60
ns
Rise Time tr 80 120
Turn-Off Delay Time td(off) 20 30
Fall Time tf12 20
Tur n - O n D e l ay Time td(on)
VDD = - 15 V, RL = 4.6 Ω
ID ≅ - 3.3 A, VGEN = - 10 V, Rg = 1 Ω
510
Rise Time tr 13 20
Turn-Off Delay Time td(off) 20 30
Fall Time tf10 15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C - 2.5 A
Pulse Diode Forward CurrentaISM - 20
Body Diode Voltage VSD IS = - 3.3 A - 0.8 - 1.2 V
Body Diode Reverse Recovery Time trr
IF = - 3.3 A, di/dt = 100 A/µs, TJ = 25 °C
20 30 ns
Body Diode Reverse Recovery Charge Qrr 20 30 nC
Reverse Recovery Fall Time ta14 ns
Reverse Recovery Rise Time tb6
Document Number: 68602
S09-0131-Rev. B, 02-Feb-09
www.vishay.com
3
Vishay Siliconix
Si3457CDV
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
VGS = 10 thru 5 V
VGS = 3 V
VGS = 4 V
VGS = 2 V
0.00
0.04
0.08
0.12
0.16
0.20
04812 16 20
- On-Resistance (Ω)R
DS(on)
ID - Drain Current (A)
VGS = 10 V
VGS = 4.5 V
0
2
4
6
8
10
0246810 12
ID = 4.1 A
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VGS
VDS = 24 V
VDS = 15 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
01234
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
TC = 125 °C
TC = 25 °C
TC = - 55 °C
Crss
0
200
400
600
800
0 5 10 15 20 25 30
Ciss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
Coss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
(Normalized)
- On-ResistanceRDS(on)
VGS = 10 V, ID = 4.1 V
VGS = 4.5 V, ID = 4.1 A
www.vishay.com
4
Document Number: 68602
S09-0131-Rev. B, 02-Feb-09
Vishay Siliconix
Si3457CDV
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0 0.2 0.4 0.6 0.81.0 1.2 1.4
TJ = 150 °C
10
VSD - Source-to-Drain Voltage (V)
IS - Source Current (A)
1
100
TJ = 25 °C
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150
ID = 250 µA
V (V)
GS(th)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.05
0.10
0.15
0.20
0.25
0246810
- On-Resistance (Ω)RDS(on)
VGS - Gate-to-Source Voltage (V)
TJ = 25 °C
TJ = 125 °C
ID = 4.1 A
0
5
10
15
20
25
Power (W)
Time (s)
10 10000.10.010.001 1001
Safe Operating Area
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
100
1
0.1 1 10 100
0.01
10
I
D
- Drain Current (A)
0.1
TA
= 25 °C
Single Pulse
1 ms
10 ms
Limited by RDS(on)*
BVDSS
Limited
100 µs
100 ms
DC
1s, 10 s
Document Number: 68602
S09-0131-Rev. B, 02-Feb-09
www.vishay.com
5
Vishay Siliconix
Si3457CDV
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
1
2
3
4
5
0 25 50 75 100 125 150
TC - Case Temperature (°C)
6
ID - Drain Current (A)
Power, Junction-to-Foot
0
1
2
3
4
25 50 75 100 125 150
TC- Case Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 68602
S09-0131-Rev. B, 02-Feb-09
Vishay Siliconix
Si3457CDV
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68602.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
0.05
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 90 °C/W
3. TJM - TA=P
DMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3 10-2 01110-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
0.02
0.05
Vishay Siliconix
Package Information
Document Number: 71200
18-Dec-06
www.vishay.com
1
1 2 3
Gauge Plane
L
5 4
R
R
C 0.15 M B A
b
C 0.08
0.17 Ref
Seating Plane
-C-
Seating Plane
A
1
A
2 A
-A-
D
-B-
E
1 E
L
2
(L
1
)
c
4x 1
4x 1
e
e1
1 2 3
6 5 4
C 0.15 M B A
b
-B-
E
1 E
e
e1
5-LEAD TSOP 6-LEAD TSOP
TSOP: 5/6−LEAD
JEDEC Part Number: MO-193C
MILLIMETERS INCHES
Dim Min Nom Max Min Nom Max
A 0.91 - 1.10 0.036 - 0.043
A
1 0.01 - 0.10 0.0004 - 0.004
A
2 0.90 - 1.00 0.035 0.038 0.039
b 0.30 0.32 0.45 0.012 0.013 0.018
c 0.10 0.15 0.20 0.004 0.006 0.008
D 2.95 3.05 3.10 0.116 0.120 0.122
E 2.70 2.85 2.98 0.106 0.112 0.117
E
1 1.55 1.65 1.70 0.061 0.065 0.067
e 0.95 BSC 0.0374 BSC
e
1 1.80 1.90 2.00 0.071 0.075 0.079
L 0.32 - 0.50 0.012 - 0.020
L
1 0.60 Ref 0.024 Ref
L
2 0.25 BSC 0.010 BSC
R 0.10 - - 0.004 - -
0 4 8 0 4 8
1 7 Nom 7 Nom
ECN: C-06593-Rev. I, 18-Dec-06
DWG: 5540
AN823
Vishay Siliconix
Document Number: 71743
27-Feb-04
www.vishay.com
1
Mounting LITTLE FOOTR TSOP-6 Power MOSFETs
Surface mounted power MOSFET packaging has been based on
integrated circuit and small signal packages. Those packages
have been modified to provide the improvements in heat transfer
required by power MOSFETs. Leadframe materials and design,
molding compounds, and die attach materials have been
changed. What has remained the same is the footprint of the
packages.
The basis of the pad design for surface mounted power MOSFET
is the basic footprint for the package. For the TSOP-6 package
outline drawing see http://www.vishay.com/doc?71200 and see
http://www.vishay.com/doc?72610 for the minimum pad footprint.
In converting the footprint to the pad set for a power MOSFET, you
must remember that not only do you want to make electrical
connection to the package, but you must made thermal connection
and provide a means to draw heat from the package, and move it
away from the package.
In the case of the TSOP-6 package, the electrical connections are
very simple. Pins 1, 2, 5, and 6 are the drain of the MOSFET and
are connected together. For a small signal device or integrated
circuit, typical connections would be made with traces that are
0.020 inches wide. Since the drain pins serve the additional
function of providing the thermal connection to the package, this
level of connection is inadequate. The total cross section of the
copper may be adequate to carry the current required for the
application, but it presents a large thermal impedance. Also, heat
spreads in a circular fashion from the heat source. In this case the
drain pins are the heat sources when looking at heat spread on the
PC board.
Figure 1 shows the copper spreading recommended footprint for
the TSOP-6 package. This pattern shows the starting point for
utilizing the board area available for the heat spreading copper. To
create this pattern, a plane of copper overlays the basic pattern on
pins 1,2,5, and 6. The copper plane connects the drain pins
electrically, but more importantly provides planar copper to draw
heat from the drain leads and start the process of spreading the
heat so it can be dissipated into the ambient air. Notice that the
planar copper is shaped like a “T” to move heat away from the
drain leads in all directions. This pattern uses all the available area
underneath the body for this purpose.
FIGURE 1. Recommended Copper Spreading Footprint
0.049
1.25
0.010
0.25
0.014
0.35
0.074
1.875 0.122
3.1
0.026
0.65
0.167
4.25
0.049
1.25
Since surface mounted packages are small, and reflow soldering
is the most common form of soldering for surface mount
components, “thermal” connections from the planar copper to the
pads have not been used. Even if additional planar copper area is
used, there should be no problems in the soldering process. The
actual solder connections are defined by the solder mask
openings. By combining the basic footprint with the copper plane
on the drain pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low impedance
path for heat to move away from the device.
REFLOW SOLDERING
Vishay Siliconix surface-mount packages meet solder reflow
reliability requirements. Devices are subjected to solder reflow as a
test preconditioning and are then reliability-tested using
temperature cycle, bias humidity, HAST, or pressure pot. The
solder reflow temperature profile used, and the temperatures and
time duration, are shown in Figures 2 and 3.
Ramp-Up Rate +6_C/Second Maximum
Temperature @ 155 " 15_C120 Seconds Maximum
Temperature Above 180_C70 − 180 Seconds
Maximum Temperature 240 +5/−0_C
Time at Maximum Temperature 20 − 40 Seconds
Ramp-Down Rate +6_C/Second Maximum
FIGURE 2. Solder Reflow Temperature Profile
AN823
Vishay Siliconix
www.vishay.com
2Document Number: 71743
27-Feb-04
255 − 260_C
1X4_C/s (max) 3-6_C/s (max)
10 s (max)
Reflow Zone
Pre-Heating Zone
3_C/s (max)
140 − 170_C
Maximum peak temperature at 240_C is allowed.
FIGURE 3. Solder Reflow Temperature and Time Durations
60-120 s (min)
217_C
60 s (max)
THERMAL PERFORMANCE
A basic measure of a device’s thermal performance is the
junction-to-case thermal resistance, Rqjc, or the
junction-to-foot thermal resistance, Rqjf. This parameter is
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted. Table 1 shows the thermal performance
of the TSOP-6.
TABLE 1.
Equivalent Steady State Performance—TSOP-6
Thermal Resistance Rqjf 30_C/W
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
In any design, one must take into account the change in
MOSFET rDS(on) with temperature (Figure 4).
0.6
0.8
1.0
1.2
1.4
1.6
−50 −25 0 25 50 75 100 125 150
VGS = 4.5 V
ID = 6.1 A
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
FIGURE 4. Si3434DV
rDS(on) − On-Resiistance
(Normalized)
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72610
26 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR TSOP-6
0.119
(3.023)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.099
(2.510)
0.064
(1.626)
0.028
(0.699)
0.039
(1.001)
0.020
(0.508)
0.019
(0.493)
Return to Index
Return to Index
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
