DATA SH EET
Product specification
Supersedes data of 1998 Jan 30 2001 Dec 05
DISCRETE SEMICONDUCTORS
BLS2731-110
Microwave power transistor
b
ook, halfpage
M3D260
2001 Dec 05 2
Philips Semiconductors Product specification
Microwave power transistor BLS2731-110
FEATURES
•Suitable for short and medium pulse applications
•Internal input and output matching networks for an easy
circuit design
•Emitter ballasting resistors improve ruggedness
•Gold metallization ensures excellent reliability
•Interdigitated emitter-base structure provides high
emitter efficiency
•Multicellgeometryimprovespowersharingandreduces
thermal resistance.
APPLICATIONS
•Commonbaseclass-Cpulsedpoweramplifiersforradar
applications in the 2.7 to 3.1 GHz band.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT423A) with the common base connected to the
flange.
PINNING - SOT423A
PIN DESCRIPTION
1 collector
2 emitter
3 base; connected to flange
Fig.1 Simplified outline.
d
book, halfpage
1
2
3
3
MBK052
QUICK REFERENCE DATA
RF performance at Th=25°C in a common base class-C test circuit.
MODE OF OPERATION f
(GHz) VCB
(V) PL
(W) Gp
(dB) ηC
(%)
Pulsed class-C 2.7 to 3.1 40 >110 >7 >35
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2001 Dec 05 3
Philips Semiconductors Product specification
Microwave power transistor BLS2731-110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
APPLICATION INFORMATION
RF performance at Th=25°C in a common base test circuit.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −75 V
VCES collector-emitter voltage RBE =0 −75 V
VEBO emitter-base voltage open collector −2V
I
CM peak collector current tp≤100 µs; δ≤10% −12 A
Ptot total power dissipation tp= 100 µs; δ= 10%; Tmb =25°C−500 W
Tstg storage temperature −65 +200 °C
Tjoperating junction temperature −200 °C
Tsld soldering temperature up to 0.2 mm from ceramic cap;
t≤10 s −235 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Zth j-h thermal impedance from junction to
heatsink tp= 100 µs; δ= 10%; note 1 0.24 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)CBO collector-base breakdown voltage IC= 30 mA; open emitter 75 −V
V(BR)CES collector-emitter breakdown voltage IC= 30 mA; VBE =0 75 −V
I
CBO collector leakage current VCB = 40 V; IE=0 −3mA
I
CES collector leakage current VCE = 40 V; VBE =0 −6mA
I
EBO emitter leakage current VEB = 1.5 V; IC=0 −0.6 mA
hFE DC current gain VCE =5V; I
C= 3 A 40 100
MODE OF OPERATION f
(GHz) VCE
(V) PL
(W) GP
(dB) ηC
(%)
Class-C; tp= 100 µs; δ= 10% 2.7 to 3.1 40 ≥110 ≥7≥35
2.7 to 2.9 40 typ. 130 typ. 8 typ. 42
2.9 to 3.1 40 typ. 120 typ. 7.5 typ. 40
2001 Dec 05 4
Philips Semiconductors Product specification
Microwave power transistor BLS2731-110
Fig.2 Power gain and efficiency as functions of
frequency; typical values.
VCE = 40 V; class-C; tp= 100 µs; δ= 10%.
handbook, halfpage
2.7 2.8 2.9
Gp
(dB)
Gp
3.1
f (GHz)
10
0
8
3
6
4
2
ηC
(%)
ηC
50
0
40
30
20
10
MBK284
VCE = 40 V; class-C; tp= 100 µs; δ= 10%.
Fig.3 Load power as a function of drive power;
typical values.
handbook, halfpage
10 12 14 20
PL
(W)
PD (W)
18
140
0
40
20
120
16
2.9 GHz 2.7 3.1
100
80
60
MBK285
Fig.4 Input impedance as function of frequency
(series components); typical values.
VCB = 40 V; class-C; PL= 110 W.
handbook, halfpage
2.6
12
8
4
02.8 3 3.2
MGM538
f (GHz)
Zi
(Ω)
ri
xi
Fig.5 Load impedance as function of frequency
(series components); typical values.
VCB = 40 V; class-C; PL= 110 W.
handbook, halfpage
2.6 2.8 3 3.2
8
4
−4
−8
0
MGM539
f (GHz)
ZL
(Ω)
XL
RL
2001 Dec 05 5
Philips Semiconductors Product specification
Microwave power transistor BLS2731-110
Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.
Dimensions in mm.
The components are located on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
handbook, full pagewidth
MGM540
input output
40
30 30
L5
L4
L6 L3 L9 C1
L12
L13 L14
L10
C2 RC
L11
L2
L1
L8
L7
2001 Dec 05 6
Philips Semiconductors Product specification
Microwave power transistor BLS2731-110
List of components (see Fig.6)
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on double-clad printed-circuit board with Duroid dielectric (εr= 2.2); thickness = 0.38 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS
C1 multilayer ceramic chip capacitor; note 1 12 pF
C2 multilayer ceramic chip capacitor; note 1 18 pF
RC multilayer ceramic chip capacitor in series
with SMD resistor 100 nF + 5 Ω
L1 stripline; note 2 length 4.5 mm
width 10 mm
L2 stripline; note 2 length 2.5 mm
width 16.4 mm
L3 stripline; note 2 length 8.3 mm
width 1 mm
L4 stripline; note 2 length 8 mm
width 1.5 mm
L5 stripline; note 2 length 2 mm
width 8.9 mm
L6 stripline; note 2 length 12.7 mm
width 1.2 mm
L7 stripline; note 2 length 4.5 mm
width 10 mm
L8 stripline; note 2 length 2.5 mm
width 24.4 mm
L9 stripline; note 2 length 4.4 mm
width 1 mm
L10 stripline; note 2 length 5.2 mm
width 1 mm
L11 stripline; note 2 length 9.3 mm
width 1 mm
L12 stripline; note 2 length 2.5 mm
width 6 mm
L13 stripline; note 2 length 7.8 mm
width 1.2 mm
L14 stripline; note 2 length 7.5 mm
width 1.2 mm
2001 Dec 05 7
Philips Semiconductors Product specification
Microwave power transistor BLS2731-110
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
99-03-29
IEC JEDEC EIAJ
SOT423A
SOT423A
Flanged hermetic ceramic package; 2 mounting holes; 2 leads
D
D1
q
U1
A
U2E1E
p
b
H
1
3
2
Q
F
c
M M
C
C
A
w2
B
w1AB
M M M
0 5 10 mm
scale
UNIT Q
cD E
1
EFHp q
mm 0.10
0.05
b
9.53
9.27 10.29
10.03
12.09
11.71 8.84
8.56
D1
12.83
12.57 1.58
1.47 19.81
18.29
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
3.43
3.18 16.51 22.99
22.73
U2
U1
9.91
9.65 0.25
w2
w1
0.76
A
5.72
4.90 3.35
2.95
inches 0.004
0.002
0.375
0.365 0.405
0.395
0.476
0.461 0.348
0.337
0.505
0.495 0.062
0.058 0.78
0.72 0.135
0.125 0.65 0.905
0.895 0.390
0.380 0.01 0.03
0.225
0.193 0.132
0.116
2001 Dec 05 8
Philips Semiconductors Product specification
Microwave power transistor BLS2731-110
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at anyotherconditionsabove thosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofanyof theseproducts,conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,andmakesno representations orwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2001 Dec 05 9
Philips Semiconductors Product specification
Microwave power transistor BLS2731-110
NOTES
2001 Dec 05 10
Philips Semiconductors Product specification
Microwave power transistor BLS2731-110
NOTES
2001 Dec 05 11
Philips Semiconductors Product specification
Microwave power transistor BLS2731-110
NOTES
© Koninklijke Philips Electronics N.V. 2001 SCA73
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Contact information
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Printed in The Netherlands 613524/05/pp12 Date of release: 2001 Dec 05 Document order number: 9397 750 09083
