DS30388 Rev. 2 - 2 1 of 5 DMN3210
www.diodes.com ã Diodes Incorporated
DMN3210
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·Low Gate Threshold Voltage
·Ultra Low On-Resistance
·Low Input/Output Capacitance
·Low Input/Output Leakage
·Fast Switching Speed
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Symbol DMN3210 Units
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±12 V
Drain Current (Note 1) Continuous ID1.7 A
Pulsed Drain Current (Note 3) IDM 15 A
Total Power Dissipation (Note 1) Pd540 mW
Thermal Resistance, Junction to Ambient (Note 1) t £10s RqJA 230 °C/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
·Case: SOT-23, Molded Plastic
·Case material - UL Flammability Rating 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Terminals: Solderable per MIL-STD-202,
Method 208
·Terminal Connections: See Diagram
·Marking: U0, See Page 5
·Weight: 0.008 grams (approx.)
·Ordering Information, See page 5
Mechanical Data
TCUDORPWEN
Note: 1. Per mounting conditions described in Note 2.
2. The value of RqJA is measured with the device mounted on 1 in2 FR-4 PC board with 2 oz. Copper, in a still air environment at
TA = 25°C. The current rating is based on the t £10s Thermal Resistance rating.
3. Repetitive Rating, pulse width limited by junction temperature.
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
A
E
JL
TOP VIEW
M
BC
H
G
D
K
D
GS
Source
Gate
D
ra
i
n
SPICE MODELS: DMN3210
DS30388 Rev. 2 - 2 2 of 5 DMN3210
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Characteristic Symbol Min Typ Max Unit Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage BVDSS 30 ¾¾VID = 250mA, VGS = 0V
Zero Gate Voltage Drain Current TJ = 25°C
TJ = 55°CIDSS ¾¾ 1
5mAVDS = 24V, VGS = 0V
Gate-Body Leakage Current IGSS ¾¾100 nA VDS = 0V, VGS = +12V
Gate Threshold Voltage VGS(th) 0.6 1 1.4 V VDS = VGS, ID = 250mA
On State Drain Current ID (ON) 10 ¾¾AVGS = 4.5V, VDS = 5V
Static Drain-Source On-Resistance RDS (ON) ¾
70
80
115
85
100
140
mW
VGS = 10V, ID = 4A
VGS = 4.5V, ID = 3A
VGS = 2.5V, ID = 2A
Forward Transconductance gFS ¾8¾SVDS = 5V, ID = 4A
Diode Forward Voltage VSD ¾0.8 1 V IS= 1A, VGS = 0V
Maximum Body-Diode Continuous Current IS¾¾2.5 A
DYNAMIC PARAMETERS
Input Capacitance Ciss ¾390 ¾pF
VGS = 0V, VDS = 15V, f = 1MHz
Output Capacitance Coss ¾54.5 ¾pF
Reverse Transfer Capacitance Crss ¾41 ¾pF
Gate Resistance Rg¾3¾W
VGS = 0V, VDS = 0V, f = 1MHz
SWITCHING PARAMETERS
Total Gate Charge Qg¾0.6 ¾nC
VGS = 4.5V, VDS = 15V, ID = 4A
Gate Source Charge Qgs ¾1.38 ¾nC
Gate Drain Charge Qgd ¾4.34 ¾nC
Turn-On Delay Time tD(on) ¾3.3 ¾ns
VGS = 10V, VDS = 15V,
RL = 3.75W, RGEN = 6W
Turn-On Rise Time tr¾1¾ns
Turn-Off Delay Time tD(off) ¾21.7 ¾ns
Turn-Off Fall Time tf¾2.1 ¾ns
Body Diode Reverse Recovery Time trr ¾12 ¾ns IF = 4A, di/dt = 100A/ms
Body Diode Reverse Recovery Charge Qrr ¾6.3 ¾nC IF = 4A, di/dt = 100A/ms
Electrical Characteristics @ TA = 25°C unless otherwise specified
Note: 4. The static characteristics in Figures 1-6, 12, 14 are obtained using 80ms pulses, duty cycle 0.5% max.
5. These tests are performed with device mounted on 1 in2 FR-4 PC board with 2 oz. copper, in a still air environment at TA = 25°C.
The SOA curve provides a single pulse rating.
TCUDORPWEN
DS30388 Rev. 2 - 2 3 of 5 DMN3210
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0.0 0.4 0.8 1.0 1.2
I REVERSE DRAIN CURRENT (A)
S,
V BODY DIODE FORWARD VOLTAGE (V)
SD,
Fig. 6 Body-Diode Forward Voltage Variation with
Source Current and Tem
p
erature
1
.
0
E+
01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-05
1.0E-04
0.2 0.6
T = 25°C
J
T = 125°C
J
0
200
026810
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 5 On-Resistance vs. Gate-Source Voltage
I = 2A
D
4
50
100
150
T = 125°C
J
T = 25°C
J
0.8
1
1.2
050 125 150 175
NORMALIZED ON-RESISTANCE
T , JUNCTION TEMPERATURE (ºC)
T
Fi
g
. 4 On-Resistance vs. Junction Temperature
1.4
1.6
1
.
8
25 75 100
V = 4.5V
GS
V = 2.5V
GS
I =2A
D
V =10V
GS
25
50
02 68
10
I , DRAIN CURRENT (A)
D
Fi
g
. 3 On-Resistance vs. Drain Current and Gate Volta
g
e
75
100
125
150
4
V = 2.5V
GS
V = 10V
GS
V = 4.5V
GS
0
2
4
01 2.5 33.5
I DRAIN-SOURCE CURRENT (A)
D,
V , GATE-SOURCE VOLTAGE (V)
GS
Fi
g
. 2 Transfer Characteristics
6
8
10
0.5 1.5 2
T = 125°C
J
T = 25°C
J
V= 2.5V
DS
0
1
5
01345
I , DRAIN-SOURCE CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fi
g
. 1 On-Re
g
ion Characteristics
V = 2V
GS
V = 3V
GS
V = 10V
GS
V = 2.5V
GS
V = 4.5V
GS
2
12
3
6
9
TCUDORPWEN
DS30388 Rev. 2 - 2 4 of 5 DMN3210
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TCUDORPWEN
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 110 100
PULSE WIDTH (s)
Fi
g
. 11 Normalized Maximum Transient Thermal Impedance
1000
Ton
Toff
PD
In descending order
D = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
5
0
10
15
20
0.001 0.01 0.1 110 1000
100
P PEAK TRANSIENT POWER, (W)
PK,
PULSE WIDTH (s)
Fig. 10 Single Pulse Power Rating Junction-to
Ambient
(
Note 5
)
T=150°C
J(MAX)
T=25°C
A
0.1
1.0
10
100
0.1 110 100
V DRAIN-SOURCE VOLTAGE (V)
DS,
Fig. 9 Maximum Forward Biased Safe
Operating Area (Note 5)
I , DRAIN
C
URRENT
(
A
)
D
T=25°C
A
T=150°C
J(MAX)
1ms
DC
R Limited
DS(ON)
0.1s
1s
10s
10ms
0
5
01345
V , GATE-SOURCE VOLTAGE (V)
GS
Q GATE CHARGE, (nC)
G,
Fi
g
. 7 Gate-Char
g
e Characteristics
V = 15V
DS
I = 2.8A
D
2
4
1
2
3
0
100
200
300
400
05
CAPACITANCE (pF)
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fi
g
. 8 Capacitance Characteristics
500
600
10 15 25
20 30
Crss
Ciss
Coss
DS30388 Rev. 2 - 2 5 of 5 DMN3210
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Marking Information
U0WXY
U0 = Product Type Marking Code
W = Week and Year Code Marking
XY = Lot Code Marking
Y = Assembly Location, Diodes China
Ordering Information (Note 6)
Device Packaging Shipping
DMN3210-7 SOT-23 3000/Tape & Reel
Notes: 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
TCUDORPWEN
Week Code Key
Week 0 - 1 2 - 3 4 - 5 6 - 7 8 - 9 10 - 11 12 - 13 14 - 15 16 - 17
Code ABCD E F GH J
Week 18 - 19 20 - 21 22 - 23 24 - 25 26 - 27 28 - 29 30 - 31 32 - 33 34 - 35
Code KLNO P R STU
Week 36 - 37 38 - 39 40 - 41 42 - 43 44 - 45 46 - 47 48 - 49 50 - 51 52 - 53
Code VXY Z 1 2 345
Year Code Key
Year 2002 2003 2004 2005
Code WWW W
