DMN3210 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODELS: DMN3210 Features * * * * * Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S Mechanical Data * * * * * * * * D E G Case: SOT-23, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: U0, See Page 5 Weight: 0.008 grams (approx.) Ordering Information, See page 5 H K J M L Drain Gate Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0 8 All Dimensions in mm Source Maximum Ratings @ TA = 25C unless otherwise specified Characteristic Symbol DMN3210 Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS 12 V ID 1.7 A Drain Current (Note 1) Continuous Pulsed Drain Current (Note 3) IDM 15 A Total Power Dissipation (Note 1) Pd 540 mW RqJA 230 C/W Tj, TSTG -55 to +150 C Thermal Resistance, Junction to Ambient (Note 1) t 10s Operating and Storage Temperature Range Note: 1. Per mounting conditions described in Note 2. 2. The value of RqJA is measured with the device mounted on 1 in2 FR-4 PC board with 2 oz. Copper, in a still air environment at TA = 25C. The current rating is based on the t 10s Thermal Resistance rating. 3. Repetitive Rating, pulse width limited by junction temperature. DS30388 Rev. 2 - 2 1 of 5 www.diodes.com DMN3210 a Diodes Incorporated NEW PRODUCT Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 30 3/4 3/4 V ID = 250mA, VGS = 0V IDSS 3/4 3/4 1 5 mA VDS = 24V, VGS = 0V STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25C TJ = 55C IGSS 3/4 3/4 100 nA VDS = 0V, VGS = +12V Gate Threshold Voltage VGS(th) 0.6 1 1.4 V VDS = VGS, ID = 250mA On State Drain Current ID (ON) 10 3/4 3/4 A VGS = 4.5V, VDS = 5V RDS (ON) 3/4 70 80 115 85 100 140 mW Forward Transconductance gFS 3/4 8 3/4 S VDS = 5V, ID = 4A Diode Forward Voltage VSD 3/4 0.8 1 V IS = 1A, VGS = 0V IS 3/4 3/4 2.5 A Input Capacitance Ciss 3/4 390 3/4 pF Output Capacitance Coss 3/4 54.5 3/4 pF Reverse Transfer Capacitance Crss 3/4 41 3/4 pF Gate Resistance Rg 3/4 3 3/4 W Total Gate Charge Qg 3/4 0.6 3/4 nC Gate Source Charge Qgs 3/4 1.38 3/4 nC Gate Drain Charge Qgd 3/4 4.34 3/4 nC Turn-On Delay Time tD(on) 3/4 3.3 3/4 ns Turn-On Rise Time tr 3/4 1 3/4 ns Turn-Off Delay Time tD(off) 3/4 21.7 3/4 ns Turn-Off Fall Time tf 3/4 2.1 3/4 ns Body Diode Reverse Recovery Time trr 3/4 12 3/4 ns IF = 4A, di/dt = 100A/ms Body Diode Reverse Recovery Charge Qrr 3/4 6.3 3/4 nC IF = 4A, di/dt = 100A/ms Gate-Body Leakage Current Static Drain-Source On-Resistance Maximum Body-Diode Continuous Current VGS = 10V, ID = 4A VGS = 4.5V, ID = 3A VGS = 2.5V, ID = 2A DYNAMIC PARAMETERS VGS = 0V, VDS = 15V, f = 1MHz VGS = 0V, VDS = 0V, f = 1MHz SWITCHING PARAMETERS Note: VGS = 4.5V, VDS = 15V, ID = 4A VGS = 10V, VDS = 15V, RL = 3.75W, RGEN = 6W 4. The static characteristics in Figures 1-6, 12, 14 are obtained using 80ms pulses, duty cycle 0.5% max. 5. These tests are performed with device mounted on 1 in2 FR-4 PC board with 2 oz. copper, in a still air environment at TA = 25C. The SOA curve provides a single pulse rating. DS30388 Rev. 2 - 2 2 of 5 www.diodes.com DMN3210 10 VGS = 10V VGS = 3V 12 VGS = 4.5V 9 VDS = 2.5V ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN-SOURCE CURRENT (A) VGS = 2.5V 6 3 8 6 4 TJ = 125C 2 TJ = 25C VGS = 2V 0 0 0.5 0 0 2 4 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 1 1 1.5 2 2.5 3 3.5 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 1.8 125 NORMALIZED ON-RESISTANCE 150 VGS = 2.5V 100 VGS = 4.5V 75 VGS = 10V 50 VGS = 4.5V ID = 2A 1.6 1.4 VGS = 10V 1.2 VGS = 2.5V 1 0.8 25 0 2 4 6 8 0 10 25 50 75 100 125 150 175 TT, JUNCTION TEMPERATURE (C) Fig. 4 On-Resistance vs. Junction Temperature ID, DRAIN CURRENT (A) Fig. 3 On-Resistance vs. Drain Current and Gate Voltage 200 1.0E+01 IS, REVERSE DRAIN CURRENT (A) NEW PRODUCT 15 ID = 2A 150 TJ = 125C 100 TJ = 25C 50 1.0E+00 TJ = 125C 1.0E-01 1.0E-02 TJ = 25C 1.0E-03 1.0E-04 1.0E-05 0.0 0 0 2 8 4 10 6 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 On-Resistance vs. Gate-Source Voltage DS30388 Rev. 2 - 2 3 of 5 www.diodes.com 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Fig. 6 Body-Diode Forward Voltage Variation with Source Current and Temperature DMN3210 5 600 500 CAPACITANCE (pF) 4 VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT VDS = 15V ID = 2.8A 3 2 Ciss 400 300 200 Coss 1 100 0 0 1 0 2 4 3 0 5 5 QG, GATE CHARGE, (nC) Fig. 7 Gate-Charge Characteristics 10 15 25 20 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Capacitance Characteristics 20 100 PPK, PEAK TRANSIENT POWER, (W) TJ(MAX) = 150C TA = 25C ID, DRAIN CURRENT (A) Crss RDS(ON) Limited 10 1ms 0.1s 10ms 1.0 1s 10s DC TJ(MAX) = 150C TA = 25C 15 10 5 0.1 1 0.1 10 0 0.001 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Maximum Forward Biased Safe Operating Area (Note 5) 0.01 0.1 1 10 100 1000 PULSE WIDTH (s) Fig. 10 Single Pulse Power Rating Junction-to Ambient (Note 5) 10 In descending order D = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Toff Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH (s) Fig. 11 Normalized Maximum Transient Thermal Impedance DS30388 Rev. 2 - 2 4 of 5 www.diodes.com DMN3210 NEW PRODUCT Ordering Information Notes: (Note 6) Device Packaging Shipping DMN3210-7 SOT-23 3000/Tape & Reel 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information U0 = Product Type Marking Code W = Week and Year Code Marking XY = Lot Code Marking Y = Assembly Location, Diodes China U0WXY Week Code Key Week 0-1 2-3 4-5 6-7 8-9 10 - 11 12 - 13 14 - 15 16 - 17 Code A B C D E F G H J Week 18 - 19 20 - 21 22 - 23 24 - 25 26 - 27 28 - 29 30 - 31 32 - 33 34 - 35 Code K L N O P R S T U Week 36 - 37 38 - 39 40 - 41 42 - 43 44 - 45 46 - 47 48 - 49 50 - 51 52 - 53 Code V X Y Z 1 2 3 4 5 Year 2002 2003 2004 2005 Code W W W W Year Code Key DS30388 Rev. 2 - 2 5 of 5 www.diodes.com DMN3210