VO615A
www.vishay.com Vishay Semiconductors
Rev. 2.3, 08-Feb-17 2Document Number: 81753
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD), and wave profile for soldering conditions for through hole
devices (DIP), please go to “Assembly Instructions” (www.vishay.com/doc?80054)
Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
Forward current IF60 mA
Forward surge current tp ≤ 10 μs IFSM 1.5 A
LED power dissipation at 25 °C Pdiss 100 mW
OUTPUT
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 7V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Output power dissipation at 25 °C Pdiss 150 mW
COUPLER
Operating ambient temperature range Tamb -55 to +110 °C
Storage temperature range Tstg -55 to +125 °C
Soldering temperature (1) 2 mm from case, ≤ 10 s Tsld 260 °C
0
50
100
150
200
0 255075100125150
Ptot - Power Dissipation (mW)
Phototransistor
Diode
Tamb - Ambient Temperature (°C)
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA VF- 1.43 1.6 V
Reverse current VR = 6 V IR- - 100 μA
Junction capacitance VR = 0, f = 1 MHz Cj-50-pF
OUTPUT
Collector emitter voltage IC = 1 mA VCEO 70 - - V
Emitter collector voltage IE = 100 μA VECO 7--V
Collector emitter leakage current VCE = 20 V, IF = 0 ICEO - 10 100 nA
COUPLER
Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat --0.3V
Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ωfc- 110 - kHz
Coupling capacitance f = 1 MHz Ck-0.6-pF